This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap la...This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal- optical （LO） phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60876007 and 10974165)the Research Program of Xiamen Municipal Science and Technology Bureau,China (Grant No. 2006AA03Z110)
文摘This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal- optical （LO） phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.
