Magnetoresistance hysteresis in the superconducting state of kagome CsV_(3)Sb_(5)

The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connectionwith unconventional superconductivity.In this study,we perform electrical transport measurements on kagome superconductorCsV_(3)Sb_(5)nanoflakes and uncover unusual hysteretic behavior of magnetoresistance in the superconducting state.This hysteresis can be induced by applying either a large DC or AC current at temperatures(T)well below the superconductingtransition temperature(T_(c)).As T approaches T_(c),similar weak hysteresis is also detected by applying a smallcurrent.Various scenarios are discussed,with particular focus on the effects of vortex pinning and the presence of timereversal-symmtery-breaking superconducting domains.Our findings support the latter,hinting at chiral superconductivityin kagome superconductors.

Linear magnetoresistance and structural distortion in layered SrCu_(4-x)P_(2) single crystals

We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

We report the study of magnetic and transport properties of polycrystalline and single crystal Na(Zn,Mn)Sb,a new member of“111”type of diluted magnetic materials.The material crystallizes into Cu2Sb-type structure which is isostructural to“111”type Fe-based superconductors.With suitable carrier and spin doping,the Na(Zn,Mn)Sb establishes spin-glass ordering with freezing temperature(Tf)below 15 K.Despite lack of long-range ferromagnetic ordering,Na(Zn,Mn)Sb single crystal still shows sizeable anomalous Hall effect below Tf.Carrier concentration determined by Hall effect measurements is over 1019 cm-3.More significantly,we observe colossal negative magnetoresistance(MR≡[ρ(H)−ρ(0)]/ρ(0))of-94%in the single crystal sample.

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Negative magnetoresistance in Dirac semimetal Cd_(3)As_(2)with in-plane magnetic field perpendicular to current

Topological insulators and semimetals have exotic surface and bulk states with massless Dirac or Weyl fermions,demonstrating microscopic transport phenomenon based on relativistic theory.Chiral anomaly induced negative magnetoresistance(negative MR)under parallel magnetic field and current has been used as a probable evidence ofWeyl fermions in recent years.Here we report a novel negative MR result with mutually perpendicular in-plane magnetic field and current in Cd_(3)As_(2)nanowires.The negative MR has a considerable value of-16%around 1.5 K and could persist to room temperature of 300 K with value of-1%.The gate tuning and angle dependence of the negative MR demonstrate the mechanism of the observed negative MR is different from the chiral anomaly.Percolating current paths induced by charge puddles and disorder might be involved to produce such considerable negative MR.Our results indicate the negative MR effect in topological semimetals involves synergistic effects of many mechanisms besides chiral anomaly.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

Electric modulation of anisotropic magnetoresistance in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions

Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption.In solid-state dielectrics,an electric field drives the redistribution of ions to create onedimensional magnetic conductive nanostructures,enabling the realization of intriguing magnetoresistance(MR)effects.Here,we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions for MR modulation.By adjusting the voltage polarity and amplitude,the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed.This results in the reduction of device resistance by~10^(3)folds,and leads to an intriguing partial asymmetric MR effect.We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle,which can be used for magnetic field direction detection.Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

Abnormal magnetoresistance effect in the Nb/Si superconductor–semiconductor heterojunction

Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor–semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching.An abnormal magnetoresistance effect,which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface,has been distinctly observed when the Nb film is in the superconductiing state.By considering the heterojunction interface being equivalent to the structure of superconductor–barrier layer–superconductor configuration,we could generally understand this unusual effect based on the Andreev reflection mechanism.Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

Spin Hall Magnetoresistance in Pt/BiFeO_(3)Bilayer

Multiferroic materials are general antiferromagnets with negligibly small net magnetization,which strongly limits their magnetoelectric applications in spintronics.Spin Hall magnetoresistance(SMR)is sensitive to the orientation of the Néel vector,which can be applied for the detection of antiferromagnetic states.Here,we apply SMR on the unique room-temperature antiferromagnetic multiferroic material BiFeO_(3)(BFO).The angular dependence of SMR in a bilayer of epitaxial BFO(001)and heavy metal Pt is studied.By rotating the sample under a magnetic field of 80 kOe in the film plane,the resistance shows the maximum when the field is perpendicular to the current while it shows the minimum when the field is along the current.This can be well explained by the SMR in the bilayer of heavy metal/antiferromagnet with the relative orientation between the Néel vector and current direction.In contrast,the angular dependence of the resistance of Pt directly deposited on a SrTiO_(3)(001)substrate shows a 90°shift with the magnetic field rotating in the film plane,which originates from the Hanle magnetoresistance of Pt.The obtained spin mixing conductance at the Pt/BFO interface clearly confirms the efficient spin transmission.Our results provide a possible solution for applications of antiferromagnetic multiferroic materials in spintronics.

Enhancement of room-temperature magnetoresistance in La_(0.5)Sm_(0.2)Sr_(0.3)MnO_3/(Ag_2O)_(x/2)

La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.

Improvement on Electrical Properties and Magnetoresistance Induced by Pd or Ag Addition in Lao.67（Ca0.65Ba0.35）0.33MnO3 Manganites

Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.

Magnetic and Magnetoresistance Properties in (La_(0.67)Ca_(0.33)MnO_3)_x / (ZrO_2 )_(1-x) Composite System

La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepared by sol-gel process. Low field magnetoresistance ( LFMR ) is greatly enhanced at low temperature when the system is close to the metallic percolation threshold of x=0.4. The magnetoresistance ratio of ( LCMO)_(0.4) /( ZrO_2 )_(0.6) in a 10 mT magnetic field at 77 K is 7.8 %, about 7.12 times larger than that of pure LCMO compound. The enhancement of spin-dependent tunneling of electrons at the interfaces between LCMO and ZrO_2 grains is responsible for the enhanced LFMR. With increasing ZrO_2 addition, Curie temperature T_C decreases firstly and then remains constant at about 220 K when (x<60%), showing limited substitution effect of Zr ions on B sites.

Lattice Effects and Irreversible Magnetoresistance in Gd Doped La-Ca-Mn-O

The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

Magnetoresistance enhancement and temperature stability of magnetoresistance in La_(1-x)(Sr_(1-y)Na_y)_xMnO_3

A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.

Low-field magnetoresistance of (1-x)La_(0.6)Dy_(0.1)Sr_(0.3)MnO_3/0.5x (Sb_2O_3) composite system under different sintering temperatures of matrix

A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.

Effect of nano-oxide layers on the magnetoresistance of ultrathin permalloy films

Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.