Spin-on-glass （SOG）, an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide （SiO2） depo...Spin-on-glass （SOG）, an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide （SiO2） deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.展开更多
SUS430 （16% - 17% （mass fraction） Cr） can be used as interconnects for solid oxide fuel cells （SOFCs） that operate at lower temperatures （ 〈 800 ℃ ）. However, oxidation of steel can occur readily at elevated...SUS430 （16% - 17% （mass fraction） Cr） can be used as interconnects for solid oxide fuel cells （SOFCs） that operate at lower temperatures （ 〈 800 ℃ ）. However, oxidation of steel can occur readily at elevated temperatures leading to the formation of Cr2O3 and spinel （Fe3O4） and thus greatly degrades the performance of the fuel cell. The aim of this work was to reduce oxide growth, in particular, the Cr2O3 phase, through the application of La0.8Sr0.2MnO3-δ （LSM2O） and La0.8Sr0.2FeO3-δ（LSF20） coatings by atmospheric plasma spraying technology （APS）. Oxide growth was characterized by using X-ray diffraction （XRD）, scanning electron microscopy （SEM） with an energy dispersive X-ray （EDX） analyzer. During oxidation of fifty 20 h cycles at 800 ℃ in air, the samples with coatings remained very stable, whereas significant spallation and weight loss were observed for the uncoated steel. LSF20 presents apparently advantages in reducing oxidation growth, interface resistance and inhibition of diffusion of chromium. After exposure in air at 800 ℃ for 1000 h, the interfacial resistance of LSF20-coated alloy is lowered by more than 23 times to that of LSM20-coated layer.展开更多
目的探究了钴互连金属电子电镀工艺中的电镀成核机理,使用健那绿B(Janus Green B,JGB)对钴的电沉积进行进一步优化,并研究了JGB在改善电镀质量过程中的作用机理。方法采用电化学测试方法包括循环伏安、电流瞬态曲线,以及表征方法包括扫...目的探究了钴互连金属电子电镀工艺中的电镀成核机理,使用健那绿B(Janus Green B,JGB)对钴的电沉积进行进一步优化,并研究了JGB在改善电镀质量过程中的作用机理。方法采用电化学测试方法包括循环伏安、电流瞬态曲线,以及表征方法包括扫描电子显微镜(SEM)以及X射线衍射光谱(XRD),对钴在阻挡层Ti N上的电子电镀机理以及JGB作用下的成核特点及晶体特性等进行研究。结果测试得到了关于体系的电化学曲线以及薄膜微观表征图样,发现了JGB的成核特征,并在无金属阳离子的体系下进行对照实验,进而得出JGB对钴电沉积体系的影响机理。结论JGB促进了体系氢还原的进行,并改变了钴的成核特征,包括成核大小和数目,进而提升了电沉积质量,实现了更高的薄膜沉积覆盖率。JGB在体系中发生一系列电化学反应生成产物γ,产物γ由于带有不饱和N原子(显正电),会优先吸附到阴极的凸起处,γ分子剩余C—H—N结构可以抑制新的钴原子成核,从而增强电极表面还原沉积的平整度,使晶粒生长更加均匀。展开更多
文摘Spin-on-glass （SOG）, an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide （SiO2） deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.
文摘SUS430 （16% - 17% （mass fraction） Cr） can be used as interconnects for solid oxide fuel cells （SOFCs） that operate at lower temperatures （ 〈 800 ℃ ）. However, oxidation of steel can occur readily at elevated temperatures leading to the formation of Cr2O3 and spinel （Fe3O4） and thus greatly degrades the performance of the fuel cell. The aim of this work was to reduce oxide growth, in particular, the Cr2O3 phase, through the application of La0.8Sr0.2MnO3-δ （LSM2O） and La0.8Sr0.2FeO3-δ（LSF20） coatings by atmospheric plasma spraying technology （APS）. Oxide growth was characterized by using X-ray diffraction （XRD）, scanning electron microscopy （SEM） with an energy dispersive X-ray （EDX） analyzer. During oxidation of fifty 20 h cycles at 800 ℃ in air, the samples with coatings remained very stable, whereas significant spallation and weight loss were observed for the uncoated steel. LSF20 presents apparently advantages in reducing oxidation growth, interface resistance and inhibition of diffusion of chromium. After exposure in air at 800 ℃ for 1000 h, the interfacial resistance of LSF20-coated alloy is lowered by more than 23 times to that of LSM20-coated layer.
文摘目的探究了钴互连金属电子电镀工艺中的电镀成核机理,使用健那绿B(Janus Green B,JGB)对钴的电沉积进行进一步优化,并研究了JGB在改善电镀质量过程中的作用机理。方法采用电化学测试方法包括循环伏安、电流瞬态曲线,以及表征方法包括扫描电子显微镜(SEM)以及X射线衍射光谱(XRD),对钴在阻挡层Ti N上的电子电镀机理以及JGB作用下的成核特点及晶体特性等进行研究。结果测试得到了关于体系的电化学曲线以及薄膜微观表征图样,发现了JGB的成核特征,并在无金属阳离子的体系下进行对照实验,进而得出JGB对钴电沉积体系的影响机理。结论JGB促进了体系氢还原的进行,并改变了钴的成核特征,包括成核大小和数目,进而提升了电沉积质量,实现了更高的薄膜沉积覆盖率。JGB在体系中发生一系列电化学反应生成产物γ,产物γ由于带有不饱和N原子(显正电),会优先吸附到阴极的凸起处,γ分子剩余C—H—N结构可以抑制新的钴原子成核,从而增强电极表面还原沉积的平整度,使晶粒生长更加均匀。
