We report the successful growth of the tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO33(001) substrates by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to...We report the successful growth of the tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO33(001) substrates by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single-UC FeS, while it has been significantly reduced in the double-UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of the FeS thin film reveal the electronic doping effect of single-UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximately 1.5?meV are observed in the films of both thicknesses at 4.6?K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence.展开更多
We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide (CuSe2 ) films on SrTiO3 (001). Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-...We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide (CuSe2 ) films on SrTiO3 (001). Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov (layer-plus-island) mode with a preferential orientation of (111). Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.展开更多
High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achiev...High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices (SLs) achieve approximately 100 arcsec (75 periods) and zero (300 periods), with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A (75 periods) and 2.1A (300 periods) over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL (75 periods) materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.展开更多
In this paper,we propose and analyze high order energy dissipative time-stepping schemes for time-fractional molecular beam epitaxial(MBE)growth model on the nonuniform mesh.More precisely,(2−α)-order,secondorder and...In this paper,we propose and analyze high order energy dissipative time-stepping schemes for time-fractional molecular beam epitaxial(MBE)growth model on the nonuniform mesh.More precisely,(2−α)-order,secondorder and(3−α)-order time-stepping schemes are developed for the timefractional MBE model based on the well known L1,L2-1σ,and L2 formulations in discretization of the time-fractional derivative,which are all proved to be unconditional energy dissipation in the sense of a modified discrete nonlocalenergy on the nonuniform mesh.In order to reduce the computational storage,we apply the sum of exponential technique to approximate the history part of the time-fractional derivative.Moreover,the scalar auxiliary variable(SAV)approach is introduced to deal with the nonlinear potential function and the history part of the fractional derivative.Furthermore,only first order method is used to discretize the introduced SAV equation,which will not affect high order accuracy of the unknown thin film height function by using some proper auxiliary variable functions V(ξ).To our knowledge,it is the first time to unconditionally establish the discrete nonlocal-energy dissipation law for the modified L1-,L2-1σ-,and L2-based high-order schemes on the nonuniform mesh,which is essentially important for such time-fractional MBE models with low regular solutions at initial time.Finally,a series of numerical experiments are carried out to verify the accuracy and efficiency of the proposed schemes.展开更多
In this work,we are concerned with the stability and convergence analysis of the second-order backward difference formula(BDF2)with variable steps for the molecular beam epitaxial model without slope selection.We firs...In this work,we are concerned with the stability and convergence analysis of the second-order backward difference formula(BDF2)with variable steps for the molecular beam epitaxial model without slope selection.We first show that the variable-step BDF2 scheme is convex and uniquely solvable under a weak time-step constraint.Then we show that it preserves an energy dissipation law if the adjacent time-step ratios satisfy r_(k):=τ_(k)/τ_(k-1)<3.561.Moreover,with a novel discrete orthogonal convolution kernels argument and some new estimates on the corresponding positive definite quadratic forms,the L^(2)norm stability and rigorous error estimates are established,under the same step-ratio constraint that ensures the energy stability,i.e.,0<r_(k)<3.561.This is known to be the best result in the literature.We finally adopt an adaptive time-stepping strategy to accelerate the computations of the steady state solution and confirm our theoretical findings by numerical examples.展开更多
基金Supported by the National Natural Science Foundation of Chinathe Ministry of Science and Technology of Chinathe Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20130002120033
文摘We report the successful growth of the tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO33(001) substrates by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single-UC FeS, while it has been significantly reduced in the double-UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of the FeS thin film reveal the electronic doping effect of single-UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximately 1.5?meV are observed in the films of both thicknesses at 4.6?K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11374336 and 61176078
文摘We perform molecular beam epitaxy growth and scanning tunneling microscopy study of copper diselenide (CuSe2 ) films on SrTiO3 (001). Using a Se-rich condition, the single-phase pyrite CuSe2 grows in the Stranski-Krastanov (layer-plus-island) mode with a preferential orientation of (111). Our careful inspection of both the as-grown and post-annealed CuSe2 films at various temperatures invariably shows a Cu-terminated surface, which, depending on the annealing temperature, reconstructs into two distinct structures 2 ×√3 and √x ×√3-R30°. The Cu termi- nation is supported by the depressed density of states near the Fermi level, measured by in-situ low temperature scanning tunneling spectroscopy. Our study helps understand the preparation and surface chemistry of transition metal pyrite dichalcogenides thin films.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11474248,61176127,61006085,61274013 and 61306013the Key Program for International S&T Cooperation Projects of China under Grant No 2011DFA62380the Ph.D. Programs Foundation of the Ministry of Education of China under Grant No 20105303120002
文摘High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices (SLs) achieve approximately 100 arcsec (75 periods) and zero (300 periods), with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A (75 periods) and 2.1A (300 periods) over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL (75 periods) materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.
基金supported by NSFC grant 12001248,the NSF of Jiangsu Province grant BK20201020the NSF of Universities in Jiangsu Province of China grant 20KJB110013+3 种基金the Hong Kong Polytechnic University grant 1-W00Dsupported by Hong Kong Research Grants Council RFS grant RFS2021-5S03 and GRF grant 15302122,the Hong Kong Polytechnic University grant 1-9BCTCAS AMSS-PolyU Joint Laboratory of Applied Mathematicssupported by the Guangdong Provincial Key Laboratory of Interdisciplinary Research and Application for Data Science under UIC 2022B1212010006.
文摘In this paper,we propose and analyze high order energy dissipative time-stepping schemes for time-fractional molecular beam epitaxial(MBE)growth model on the nonuniform mesh.More precisely,(2−α)-order,secondorder and(3−α)-order time-stepping schemes are developed for the timefractional MBE model based on the well known L1,L2-1σ,and L2 formulations in discretization of the time-fractional derivative,which are all proved to be unconditional energy dissipation in the sense of a modified discrete nonlocalenergy on the nonuniform mesh.In order to reduce the computational storage,we apply the sum of exponential technique to approximate the history part of the time-fractional derivative.Moreover,the scalar auxiliary variable(SAV)approach is introduced to deal with the nonlinear potential function and the history part of the fractional derivative.Furthermore,only first order method is used to discretize the introduced SAV equation,which will not affect high order accuracy of the unknown thin film height function by using some proper auxiliary variable functions V(ξ).To our knowledge,it is the first time to unconditionally establish the discrete nonlocal-energy dissipation law for the modified L1-,L2-1σ-,and L2-based high-order schemes on the nonuniform mesh,which is essentially important for such time-fractional MBE models with low regular solutions at initial time.Finally,a series of numerical experiments are carried out to verify the accuracy and efficiency of the proposed schemes.
基金supported by National Natural Science Foundation of China(Grant No.12071216)supported by National Natural Science Foundation of China(Grant No.11731006)+2 种基金the NNW2018-ZT4A06 projectsupported by National Natural Science Foundation of China(Grant Nos.11822111,11688101 and 11731006)the Science Challenge Project(Grant No.TZ2018001)。
文摘In this work,we are concerned with the stability and convergence analysis of the second-order backward difference formula(BDF2)with variable steps for the molecular beam epitaxial model without slope selection.We first show that the variable-step BDF2 scheme is convex and uniquely solvable under a weak time-step constraint.Then we show that it preserves an energy dissipation law if the adjacent time-step ratios satisfy r_(k):=τ_(k)/τ_(k-1)<3.561.Moreover,with a novel discrete orthogonal convolution kernels argument and some new estimates on the corresponding positive definite quadratic forms,the L^(2)norm stability and rigorous error estimates are established,under the same step-ratio constraint that ensures the energy stability,i.e.,0<r_(k)<3.561.This is known to be the best result in the literature.We finally adopt an adaptive time-stepping strategy to accelerate the computations of the steady state solution and confirm our theoretical findings by numerical examples.