This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by t...This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm^2 including pads.展开更多
An adjustable mixer for surface acoustic wave( SAW)-less radio frequency( RF) front-end is presented in this paper. Through changing the bias voltage,the presented mixer with reconfigurable voltage conversion gain( VC...An adjustable mixer for surface acoustic wave( SAW)-less radio frequency( RF) front-end is presented in this paper. Through changing the bias voltage,the presented mixer with reconfigurable voltage conversion gain( VCG) is suitable for multi-mode multi-standard( MMMS) applications. An equivalent local oscillator( LO) frequency-tunable high-Q band-pass filter( BPF) at low noise amplifier( LNA) output is used to reject the out-of-band interference signals. Base-band( BB) capacitor of the mixer is variable to obtain 15 kinds of intermediate frequency( IF) bandwidth( BW). The proposed passive mixer with LNA is implemented in TSMC 0. 18μm RF CMOS process and operates from 0. 5 to 2. 5 GHz with measured maximum out-of-band rejection larger than 40 d B. The measured VCG of the front-end can be changed from 5 to 17 d B; the maximum input intercept point( IIP3) is0 d Bm and the minimum noise figure( NF) is 3. 7 d B. The chip occupies an area of 0. 44 mm^2 including pads.展开更多
基金Supported by the National Nature Science Foundation of China(No.61674037)the Priority Academic Program Development of Jiangsu Higher Education Institutions,the National Power Grid Corp Science and Technology Project(No.SGTYHT/16-JS-198)the State Grid Nanjing Power Supply Company Project(No.1701052)
文摘This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm^2 including pads.
基金Supported by the National Basic Research Program of China(No.2010CB327404)the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘An adjustable mixer for surface acoustic wave( SAW)-less radio frequency( RF) front-end is presented in this paper. Through changing the bias voltage,the presented mixer with reconfigurable voltage conversion gain( VCG) is suitable for multi-mode multi-standard( MMMS) applications. An equivalent local oscillator( LO) frequency-tunable high-Q band-pass filter( BPF) at low noise amplifier( LNA) output is used to reject the out-of-band interference signals. Base-band( BB) capacitor of the mixer is variable to obtain 15 kinds of intermediate frequency( IF) bandwidth( BW). The proposed passive mixer with LNA is implemented in TSMC 0. 18μm RF CMOS process and operates from 0. 5 to 2. 5 GHz with measured maximum out-of-band rejection larger than 40 d B. The measured VCG of the front-end can be changed from 5 to 17 d B; the maximum input intercept point( IIP3) is0 d Bm and the minimum noise figure( NF) is 3. 7 d B. The chip occupies an area of 0. 44 mm^2 including pads.