Binding Energy and Photoionization of Hydrogenic Impurities in GaAs/Ga_(1-x)Al_xAs Quantum Well Wires

The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.

Polar Quasi-Confined Optical Phonon Modes in Wurtzite Quasi-One-Dimensional GaN/Al_xGa_(1-x)N Quantum Well Wires

Based on the dielectric continuum model and Loudon＇s uniaxial crystal model,quasi-confined （QC） optical phonon modes and electron-QC phonon coupling functions in quasi-one-dimensional （QID） wurtzite quantum well wires （QWWs） are deduced and analyzed. Numerical calculations on an AIN/GaN/AIN wurtzite QWW are performed. The results reveal that the dispersions of the QC modes are quite obvious only when the free wavenumber kz in the z-direction and the azimuthal quantum number m are small. The reduced behavior of the QC modes in wurtzite quantum systems is clearly observed. Through the discussion of the electron-QC mode coupling functions,it is found that the lower-frequency QC modes in the high-frequency region play a more important role in the electron-QC phonon interactions. Moreover,our computations also prove that kz and m have a similar influence on the electron-QC phonon coupling properties.

ENERGY LEVELS OF STRONG COUPLING MAGNETOPOLARON IN QUANTUM WIRE

With the use of variational method of Pekar type, this paper studied the energy levels of magnetopolaron in quantum wire with strong electron phonon interaction. The magnetopolaron binding energy in the ground state and in the excited state, as well as the resonance frequency of magnetopolaron were calculated. Their dependence on the cyclotron frequency and the confinement strength of quantum wire was depicted. The limiting case of bulk type and strict two dimensional type was discussed.

Spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling

Using the perturbation method, we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling. The heat generated by the spin current is calculated. With the increase of the width of the quantum wire, the spin current and the heat generated both exhibit period oscillations with equal amplitudes. When the quantum-channel number is doubled, the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2. For the spin current js,xy, the amplitude increases with the decrease of the quantum channel; while the amplitude of the spin current js,yx remains the same. Therefore we conclude that the effect of the quantum-channel number on the spin current js,xy is greater than that on the spin current js,yx. The strength of the Rashba spin-orbit coupling is tunable by the gate voltage, and the gate voltage can be varied experimentally, which implies a new method of detecting the. spin current. In addition, we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels. All these characteristics of the spin current will be very important for detecting and controlling the spin current, and especially for designing new spintronic devices in the future.

Polar interface and surface optical vibration spectra in multi-layer wurtzite quantum wires： transfer matrix method

The polar interface optical （IO） and surface optical （SO） phonon modes and the corresponding Froehlich electron phonon-interaction Hamiltonian in a freestanding multi-layer wurtzite cylindrical quantum wire （QWR） are derived and studied by employing the transfer matrix method in the dielectric continuum approximation and Loudon＇s uniaxial crystal model. A numerical calculation of a freestanding wurtzite GaN/AlN QWR is performed. The results reveal that for a relatively large azimuthal quantum number m or wave-number kz in the free z-direction, there exist two branches of IO phonon modes localized at the interface, and only one branch of SO mode localized at the surface in the system. The degenerating behaviours of the IO and SO phonon modes in the wurtzite QWR have also been clearly observed for a small kz or m. The limiting frequency properties of the IO and SO modes for large kz and m have been explained reasonably from the mathematical and physical viewpoints. The calculations of electron-phonon coupling functions show that the high-frequency IO phonon branch and SO mode play a more important role in the electron phonon interaction.

Effects of Electron-Phonon Interaction on Linear and Nonlinear Optical Absorption in Cylindrical Quantum Wires

The electron-phonon interaction influences on lineax and nonfineax optical absorption in cylindrical quantum wires （CQW） with an infinite confining potential axe investigated. The optical absorption coefficients are obtained by using the compact-density-matrix approach and iterative method, and the numerical results are presented for GaAs CQW. The results show that the electron-phonon interaction makes a distinct influence on optical absorption in CQW. The electron-phonon interaction on the wave functions of electron dominates the values of absorption coefficients and the correction of the electron-phonon effect on the energies of the electron makes the absorption peaks blue shift and become wider. Moreover, the electron-phonon interaction influence on optical absorption with an infinite confining potential is different from that with a finite confining potential.

Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires

By employing the dielectric continuum model and Loudon＇s uniaxial crystal model, the interface optical （IO） phonon modes in a freestanding quasi-one-dimensional （Q1D） wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The resulte reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number kz in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number kz and Iarge ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.

Polaronic Effects of an Exciton in a Cylindrical Quantum Wire

The effects of exciton-optical phonon interaction on the binding energy and the total and reduced effective masses of an exciton in a cylindrical quantum wire have been investigated. We adopt a perturbative-PLL [T.D. Lee,F. Low, and D. Pines, Phys. Rev. B90 (1953) 297] technique to construct an effective Hamiltonian and then use a variational solution to deal with the exciton-phonon system. The interactions of exciton with the longitudinal-optical phonon and the surface-optical phonon have been taken into consideration. The numerical calculations for GaAs show that the influences of phonon modes on the exciton in a quasi-one-dimensional quantum wire are considerable and should not be neglected. Moreover the numerical results for heavy- and light-hole exciton are obtained, which show that the polaronic effects on two types of excitons are very different but both depend heavily on the sizes of the wire.

Delta-doped quantum wire tunnel junction for highly concentrated solar cells

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration.The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

STUDY OF EFFECT OF SURFACE-OPTICAL PHONON ON BIPOLARON IN QUANTUM-WELL WIRE

The motion of a bipolaron in the quantum well wire(QWW) has been investigated based on weakly or intermediately coupling with the surface optical phonon.This kind of system,in some sense,may represent the behaviour of bipolaron in high temperature ceramic superconductors.The Hamiltonian of the system is first transformed by double unitary transformation,so that some of the relevant quantities,such as the phonon induced potential energies V e so and U e so( z) ,can be calculated.The results of our calculation indicate that both of the phonon induced potential energies are strengthened as the radius ρ o of the QWW becomes thinner.However,this is valid merely for ρ o to be greater than a specific value that corresponds to the minimum of the energy.The total effective potential energy V eff ( z ) for the bipolaron in the QWW is also evaluated.The result of this wholy effective potential energy indicates that there is an equilibrium position for the two electrons which form the bipolaron.This position depends also on the radius of the QWW.The justification for our theoretical calculations awaits experimental results for future development in the low dimensional structure of superconductivity.

Band structure and absorption coefficient in GaN/AlGaN quantum wires

The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

We study the electron states and the differential cross section for an electron Raman scattering process in a semi- conductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al0.35Ga0.65As matrix. The system is modeled by considering T = 0 K and also a single parabolic con- duction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

Binding energy of the donor impurities in GaAs-Ga_(1-x)Al_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

The behavior of a donor in the GaAs–GaAlAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters(De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.

Cyclotron Resonance of Free Magnetopolaron in Quantum Well Wires

The cyclotron resonance of magnetopolaron in quantum well wires (QWWs) have been studied with the use of variational solutions to the effective mass equation. The results show that both the abso- lute value of the electron-phonon interaction energy and the cyclotron resonance frequency de- crease with the increase of the sizes of QWWs, and also that the cyclotron resonance frequency in- creases with the external magnetic field.

Spin texturing in quantum wires with Rashba and Dresselhaus spin-orbit interactions and in-plane magnetic field

In this work, we investigate the effects of interplay of spin-orbit interaction and in-plane magnetic fields on the electronic structure and spin texturing of parabolically confined quantum wire. Numerical results reveal that the competing effects between Rashba and Dresselhaus spin--orbit interactions and the external magnetic field lead to a complicated energy spectrum. We find that the spin texturing owing to the coupling between subbands can be modified by the strength of spin- orbit couplings as well as the magnitude and the orientation angle of the external magnetic field.

Spin-Dependent Transport through a Quantum Wire with Magnetic Impurity

Spin-dependent transmission coefficients as a function of Fermi energy is calculated for electron scattering from magnetic impurity in a narrow quantum wire, in which spin-exchange interaction between conducting electron and the impurity leads to exchange spin-flip scattering. Transmission in the spin-flipped channels is explicitly calculated. It has been found that spin-up and spin-down transmission coefficients for intrasubband and intersubband enhance Fano-resonance profiles, which have asymmetric behaviors, whenever Fermi energy crosses bottom of every subband below. Meanwhile due to dephasing of electron wave caused by spin-flip scattering, the entanglement between spin states of electron and magnetic impurity obviously destroys the global step structure of quantized conductance and suppresses the height of the conductance step.

Resonant Transmission Through Two Impurities in a Narrow Quantum Wire

We study electron transmission through two impurities in a narrow quantum wire by solving Dyson's equations for single electron Green functions. We have verified that, for the delta-function potential of two impurities, the Green function can be factorized into a product of the ‘free’ Green function and current transmission amplitude. Meanwhile Green function and current transmission amplitude obey Fisher-Lee's relation. An analytical expression of the electron transmission amplitude for intrasubband and intersubband is obtained as a function of Fermi energy and the distance between two impurities. The resonant behavior of the current transmission amplitude are detail discussed.

Persistent spin current in a quantum wire with weak Dresselhaus spin-orbit coupling

The spin current in a parabolically confined semiconductor hcterojunction quantum wire with Drcsselhaus spinorbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin-orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.

Tunneling conductance in quantum wire/insulator/d_(x2-y2) + id_(xy) mixed wave superconductor junctions

Using the extended Blonder-Tinkham-Klapwijk （BTK） theory, this paper calculates the tunnelling conductance in quantum wire/insulator/dx2-y2 ＋ idly mixed wave superconductor （q/I/dx2-y2 ＋ idly） junctions. That is different from the case in d- and p-wave superconductor junctions. When the angle α between a-axis of the dx2-y2 wave superconductor and the interface normal is π/4, there follows a rather distinctive tunnelling conductance. The zero-bias conductance peak （ZBCP） may or may not appear in the tunnelling conductance. Both the interface potential z and the quasi-particle lifetime factor F are smaller, there is no ZBCP. Otherwise, the ZBCP will appear. The position of bias conductance peak （BCP） depends strongly on the amplitude ratio of two components for dx2-y2 ＋ idxy mixed wave. The low and narrow ZBCP may coexist with the BCP in the tunnelling conductance. Using those features in the tunnelling conductance of q/I/dx2-y2 ＋ idxy junctions, it can distinguish dx2-y2 ＋ idxy mixed wave superconductor from d- and p-wave one.

Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires

The influence of InAs deposition thickness on the structural and optical properties of InAs/InA1As quantum wires （QWR） superlattices （SLS） was studied. The transmission electron microscopy （TEM） results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers （MLs） InAs deposition. In addition, the zig-zag features along the extending direc- tion and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carders between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.