Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.

Mixed P3HT/PCBM Organic Thin-Film Transistors： Relation between Morphology and Electrical Characteristics

The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.

Organic thin-film transistors and related devices in life and health monitoring

The early determination of disease-related biomarkers can significantly improve the survival rate of patients.Thus,a series of explorations for new diagnosis technologies,such as optical and electrochemical methods,have been devoted to life and health monitoring.Organic thin-film transistor(OTFT),as a state-of-the-art nano-sensing technology,has attracted significant attention from construction to application owing to the merits of being label-free,low-cost,facial,and rapid detection with multi-parameter responses.Nevertheless,interference from non-specific adsorption is inevitable in complex biological samples such as body liquid and exhaled gas,so the reliability and accuracy of the biosensor need to be further improved while ensuring sensitivity,selectivity,and stability.Herein,we overviewed the composition,mechanism,and construction strategies of OTFTs for the practical determination of disease-related biomarkers in both body fluids and exhaled gas.The results show that the realization of bio-inspired applications will come true with the rapid development of high-effective OTFTs and related devices.

3-Methylcyclohexanone Processed n-Channel Organic Thin-Film Transistors Based on a Conjugated Polymer Synthesized by Direct Arylation Polycondensation

The solubility of a direct arylation polycondensation(DArP)synthesized conjugated polymer,i.e.,poly(3,6-bis(furan-2-yl)-2,5-bis(4-tetradecyloctadecyl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-1,2-bis(3,4-d ifl uorothien-2-yl)ethene)(PFuD PP-4FTVT),in variou s organic solvents was studied.The polymer is soluble in 3-methylcyclohexanone(3-MC),a green solvent from peppermint oil,besides other solvents such as anisole,cyclopentyl methyl ether(CPME)and o-dichlorobenzene(o-DCB),etc.Based on the Hansen solu bility parameters(HSP)analysis,3-MC is identified as a"marginal solvent"of PFuDPP-4FTVT.The morphology of the spin-coated films with 3-MC as the solvent strongly correlated with the solution preparation conditions.With a 3-MC solution aged for 3 h at 70℃,n-channel organic thin-film transistors(OTFTs)with electron mobility(μe)above 1 cm^(2)·V^(-1)·s^(-1) and current on/off ratio(Ion/Ioff)higher than 105 were fabricated by spin-coating.This is the first report on high mobility conjugated polymers for OTFTs processible with natu rally occurred green solvent.

Diketopyrrolopyrrole-based Conjugated Polymers as Representative Semiconductors for High-Performance Organic Thin-Film Transistors and Circuits

Since the first report of diketopyrrolopyrrole(DPP)-based conjugated polymers for organic thin-film transistors(OTFTs),these polymers have attracted great attention as representative semiconductors in high-performance OTFTs.Through unremitting efforts in molecular-structure regulation and device optimization,significant mobilities exceeding 10 cm2·V–1·s–1 have been achieved in OTFTs,greatly promoting the applied development of organic circuits.In this review,we summarize our progress in molecular design,synthesis and solution-processing of DPP-based conjugated polymers for OTFT devices and circuits,focusing on the roles of design strategies,synthesis methods and processing techniques.Furthermore,the remaining issues and future outlook in the field are briefly discussed.

Modulating contact properties by molecular layers in organic thin-film transistors

Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow-resistance contacts.However,due to a larger access resistance in staggered organic thin-film transistors(OTFTs),the achievement of ultralow contact resistance(Rc)is still a challenge.The modulation of contact resistance by molecular layers near the interface has been rarely reported.Here,we demonstrate that fewlayer organic single crystals are grown on hafnium oxide(HfO_(2))by solution-shearing epitaxy.We utilize these organic crystals to fabricate bottom-gate staggered OTFTs with different contact processes.The results show that the contact properties of OTFTs are obviously modulated by crystal layers.The tri-layer(3L)evaporated-Au C10-DNTT OTFTs exhibit optimal electrical performance,including ultralow Rc of 5.6Ω⋅cm,recorded transfer length of 0.4μm,field-effect mobility over 14 cm^(2)V^(−1)s^(−1),threshold voltage lower than 0.3 V,and long-term air stability over 8 months.The main cause is that the metal atoms can penetrate into the charge transport layer,with damage-free,in 3L evaporated-Au OTFTs;nevertheless,it cannot be realized in other cases.Due to layer stacking of conjugated molecules and polymers,our strategy can efficiently modulate the contact resistance to aid the development of highperformance organic devices and circuits.

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.

Device design principles and bioelectronic applications for flexible organic electrochemical transistors

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

Transient Response and Ionic Dynamics in Organic Electrochemical Transistors

The rapid development of organic electrochemical transistors(OECTs)has ushered in a new era in organic electronics,distinguishing itself through its application in a variety of domains,from high-speed logic circuits to sensitive biosensors,and neuromorphic devices like artificial synapses and organic electrochemical random-access memories.Despite recent strides in enhancing OECT performance,driven by the demand for superior transient response capabilities,a comprehensive understanding of the complex interplay between charge and ion transport,alongside electron–ion interactions,as well as the optimization strategies,remains elusive.This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses,emphasizing advancements in device physics and optimization approaches.We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications,as well as the impact of materials,morphology,device structure strategies on optimizing transient responses.This paper not only offers a detailed overview of the current state of the art,but also identifies promising avenues for future research,aiming to drive future performance advancements in diversified applications.

Indacenodithiophene-based single-component ambipolar polymer for high-performance vertical organic electrochemical transistors and inverters

Single-component ambipolar polymers are highly desirable for organic electrochem-ical transistors(OECTs)and integration into complementary logic circuits with reduced process complexity.However,they often suffer from imbalanced p-type and n-type characteristics and/or stability issues.Herein,a novel single-component ambipolar polymer,namely,gIDT–BBT is reported based on indacenodithiophene(IDT)as the electron donor,benzobisthiadiazole(BBT)as the electron acceptor and oligo ethylene glycol(OEG)as the side chain.Benefitting from the extended backbone planarity and rigidity of IDT,pronounced electron-withdrawing capabil-ity of BBT,favored ionic transport from OEG together with vertical OECT device structure,a nearly balanced ambipolar OECT performance is achieved for gIDT–BBT,revealing a high transconductance of 155.05±1.58/27.28±0.92 mS,a high current on/off ratio>10^(6) and an excellent operational stability under both p-type and n-type operation conditions.With gIDT–BBT in hand,furthermore,vertically stacked complementary inverters are successfully fabricated to show a maximum voltage gain of 28 V V^(-1)(V_(IN)=0.9 V)and stable operation over 1000 switching cycles,and then used for efficient electrooculogram recording.This work provides a new approach for the development of ambipolar single-component organic mixed ionic–electronic conductors and establishes a foundation for the manufacture of high-performance ambipolar OECTs and associated complementary circuits.

An isoindigo-bithiazole-based acceptor-acceptor copolymer for balanced ambipolar organic thin-film transistors

Balanced carrier transport is observed in acceptor-acceptor （A-A＇） type polymer for ambipolar organic thin-film transistors （OTFTs）. It is found that the incorporation of two electron-accepting moieties （BTz and IIG） into a polymer main chain to form A-A＇ polymer PIIG-BTz could lower highest occupied molecular orbital （HOMO） and lowest unoccupied molecular orbital （LUMO） levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor （A-A＇） structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.

Chlorinated Conjugated Polymer Based on Chlorine- and Cyano-substituted (E)-1,2-Di(thiophen-2-yl)ethane for Ambipolar and n-Type Organic Thin-film Transistors

Chlorinated conjugated polymers are rarely reported in ambipolar and n-type organic thin-film transistors(OTFTs),mainly due to the lack of chlorinated strong electron-deficient building blocks.Herein,we report three new chlorine(Cl)-and cyano(CN)-substituted(E)-1,2-di(thiophen-2-yl)ethane building blocks and their copolymers P2Cl1CNTVT-DPP,P4Cl1CNTVT-DPP and P2Cl2CNTVT-DPP.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Acceptor-Donor-Acceptor Conjugated Oligomers Based on Diketopyrrolopyrrole and Thienoacenes with Four, Five and Six Rings for Organic Thin-film Transistors

Three acceptor-donor-acceptor （A-D-A） conjugated oligomers, i.e., O1, 02 and 03, have been synthesized using diketopyrrolopyrrole （DPP） as an electron-acceptor unit, and naphtho[1,2-b：5,6-b＇]dithiophene （NDT）, anthra[1,2-b：5,6- b＇]dithiophene （ADT） or dithieno[3,2-b：Y,2＇-b＇]naphtbo[1,2-b：5,6-b＇]dithiophene （DTNDT） as electron-donor unit. These oligomers exhibit identical highest occupied molecular orbital （HOMO） and lowest unoccupied molecular orbital （LUMO） energy levels, which were ca. -5.1 and -3.3 eV, respectively. Upon thermal annealing, all three oligomers formed thin films with ordered microstructures, and their organic thin film transistors （OTFTs） exhibited p-type transport behavior. The mobility was increased with an extension of the size of D-units. 03 showed the best OTFT performance with the mobility of up to 0.20 cm2·V-1 ·s-1. The film quality of 03 was improved by adding 1 wt% poly（methylmethacrylate） （PMMA）. In consequence, the mobility of the O3-based devices was further enhanced to 0.30 cm2·V-1 ·s-1.

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

A structurally ordered thiophene-thiazole copolymer for organic thin-film transistors

This paper reports a new donor-acceptor copolymer semiconductor, PTBTh, comprising bithiophene and bithiazole where the regular coplanar structure and the intramolecular charge transfer are expected to increase the opportunity for --- stacking and charge transport. The AFM image shows lamellar stacking of the polymer on the surface. The field-effect transistor (FET) properties of PTBTh have been evaluated by a bottom-contact/bottom-gate TFT configuration. The device showed a high hole mobility of 1.14×10-2 cm2 V-1 s-1 and a current on/off ratio of 3×105 with the polymer thin film annealed at a mild temperature of 120 ℃ when measured under ambient conditions.

Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl) perylene-3,4,9,10-tetracarboxylic diimide

Fabrication of ambipolar organic field-effect transistors （OFETs） is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized.We select pentacene as a P-type material and N,N＇-bis（4-trifluoromethylben-zyl）perylene-3,4,9,10-tetracarboxylic diimide （PTCDI-TFB） as a n-type material in the active layer of the OFETs.The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm^2/（V·s） and field-effect electron mobility of 0.031 cm^2/（V·s）.Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days.The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane （OTS） self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility.The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.