Multiframe-integrated, in-sensor computing using persistent photoconductivity

The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS_(2) photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.

Interfacial photoconductivity effect of type-Ⅰ and type-Ⅱ Sb2Se3/Si heterojunctions for THz wave modulation

An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.

Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity

Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.

Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

Ultrafast Carrier Dynamics and Terahertz Photoconductivity of Mixed-Cation and Lead Mixed-Halide Hybrid Perovskites

Using time-dependent terahertz spectroscopy, we investigate the role of mixed-cation and mixed-halide on the ultrafast photoconductivity dynamics of two different methylammonium(MA) lead-iodide perovskite thin films. It is found that the dynamics of conductivity after photoexcitation reveals significant correlation on the microscopy crystalline features of the samples. Our results show that mixed-cation and lead mixed-halide affect the charge carrier dynamics of the lead-iodide perovskites. In the(5-AVA)_(0.05)(MA)_(0.95) PbI_(2.95) Cl_(0.05)/spiro thin film, we observe a much weaker saturation trend of the initial photoconductivity with high excitation fluence, which is attributed to the combined effect of sequential charge carrier generation, transfer, cooling and polaron formation.

Synthesis and Photoconductivity of Nanosized Phthalocyanine

Functional phthalocyanine （Pc） compounds of H2Pc, TiOPc, FePc and CIAIPc were synthesized with a yield of 46.7%, 91.2%, 37.4% and 34.0%, respectively. Nanosized TiOPc was synthesized via a one-step sol-gel method and effects of surfactant doses, nucleation temperature on TiOPc particle size and photoconductivity were investigated. When re（PEG）： m（TiOPc） was 0.1 and nucleation temperature was 0℃, the as-obtained TiOPc had the smallest particle size and largest specific surface area, which were 60 nm and 83m^2/g, respectively. TiOPc synthesized under these conditions also exhibits excellent photoconductivity with charging potential V0, dark decay speed Rd and energy for half-discharging of potential E1/2 being 1160 V, 30 V/s and 0.6 1x.s, respectively.

Negative photoconductivity in low-dimensional materials

In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.

The Synthesis, Photoconductivity, Photoinduced Charge Transfer, and Other Properties of HEC-TCNQ

The donor-acceptor complex HEC-TCNQ (HEC = 9-hydroxyethylcarbazole; TCNQ = tetracyanoquinodimethane) has been synthesized. Under the illumination of Ar+ laser, the photoinduced charge transfer salt HEC(+)TCNQ(-) can be formed with a conductivity of at least one order of magnitude larger than that of HEC-TCNQ.

Preparation and Photoconductivity of Fe-Phthalocyanine Derivation and C_(60) Composite Films

Fe (III) 2,9,16,23 tertracarboxy phthalocyanine (Fe (III) taPc) was synthesized, and bonded to polystyrene (PS) with covalence by Friedel Crafts reaction to form a new polymer (Fe (III) taPc PS) (polymer (II)). UV VIS and Infrared spectra indicated that Fe (III) taPc was successfully bonded to PS. A photoreceptor device of sandwich structure consisting of alternate layers of polymer (II) and fullerene (C 60 ) was prepared. The experiment results show that the photoconductivity of the photoreceptor is higher than that of the single layer film of polymer (II) or C 60 , because of the charge transfer effect between the layers.

A systematic study of light dependency of persistentphotoconductivity in a-InGaZnO thin-film transistors

Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing light-intensity.Density of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally activated.Furthermore,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable defects.Under low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is fast.With increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher light-exposure.Based on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.

PHOTOCONDUCTIVITY STUDY OF NEW POLYACETYLENE DERIVATIVES WITH DIFFERENT SUBSTITUENTS

The photoconductivities of a series of novel polyacetylene derivatives （PAs） serving as charge generation materials in the single-layered photoreceptors were investigated using photoinduced xerographic discharge technique. It was found that the substitution can improve the photosensitivity of PAs by increasing the conjugation of π electrons. When the substituent is itself photoconductive, the photoconductivity becomes even higher. It can be concluded from cyclic voltammetry that when the HOMO level of the polymer is closer to that of the charge transport material, the photoconduction performance will be better.

Suppression of persistent photoconductivity in high gain Ga_(2)O_(3) Schottky photodetectors

The defect-related photoconductivity gain and persistent photoconductivity(PPC)observed in Ga_(2)O_(3)Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed.In this work,a metal-semiconductor-metal(MSM)Schottky photodetector,a unidirectional Schottky photodetector,and a photoconductor were constructed on Ga_(2)O_(3)films.The MSM Schottky devices have high gain(>13)and high responsivity(>2.5 A/W)at 230-250 nm,as well as slow recovery speed caused by PPC.Interestingly,applying a positive pulse voltage to the reverse-biased Ga_(2)O_(3)/Au Schottky junction can effectively suppress the PPC in the photodetector,while maintaining high gain.The mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models,which is attributed to the correlation with ionized oxygen vacancies in the Schottky junction.The positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen vacancies.The realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.

Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy

This paper investigates the ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs in detail by using a terahertz pump-emission technique. Based on theoretical modelling, it finds that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed after the excitation of pump pulse and we attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperature- dependent measurements are also performed to verify this trapping model.

Self-magnetism and Persistent Photoconductivity

Persistent photoconductivity has been investigated by various models, among which the Macroscopic Barrier model, Large-Lattice-Relaxation model, and Random Local Potential Fluctuations model are mostly well known. Although the three well-known models have played important roles in describing the persistent photoconductivity, they are not the principal cause of persistent photoconductivity. In this paper a classical model originated from ＂selfmagnetism of electron gas＂ is proposed to illustrate the persistent photoconductivity phenomenon. This classical model is based on electron gas pulsation, which depends on the charge density. Different concentrations of current carriers create different frequencies in the system, and thus the system is sensitive to different wave lengths of incident light. Then the construction of different detectors can be possible for different wave lengths of incident light.

Ultraviolet irradiation dosimeter based on persistent photoconductivity effect of ZnO

It is essential to determine the accumulative ultraviolet(UV)irradiation over a period of time in some cases,such as monitoring UV irradiation to the skin,solar disinfection of water,photoresist exposure,etc.UV colorimetric dosimeters,which use dyes'color change to monitor the amount of UV exposure,have been widely studied.However,the exposure data of these UV colorimetric dosimeters can hardly be converted to digital signals,limiting their applications.In this paper,a UV dosimeter has been proposed and demonstrated based on the persistent photoconductivity(PPC)in zinc oxide microwires(ZnO MWs).The PPC effect usually results in high photoconductivity gain but low response speed,which has been regarded as a disadvantage for photodetectors.However,in this work,the unique characteristics of the PPC effect have been utilized to monitoring the accumulative exposure.We demonstrate that the photocurrent in the ZnO MWs depends on the accumulative UV exposure due to the PPC effect,thus the photocurrent can be utilized to determine the UV accumulation.The dosimeter is immune to visible light and exhibits a photoconductive gain of 2654,and the relative error of the dosimeter is about 10%.This UV dosimeter with electrical output is reusable and convenient to integrate with other electronic devices and may also open a new application area for the PPC effect.

Photoconductivity Characteristics of Porous Si

Al was evaporated on the surface of PS which was prepared by electrochemical anodization in HF solution to form a metal/PS/Si/Al junction.The photoconductivity spectrum and other features were measured which present that PS has a stronger visible photoconductivity effect,specially in orange-yellow region.An analysis and discussion were made on it accordingly.

The Growth and the Optical, Mechanical, Dielectric and Photoconductivity Properties of a New Nonlinear Optical Crystal—L-Phenylalanine-4-nitrophenol NLO Single Crystal

Nonlinear optical single crystals of L-phenylalanine-4-nitrophenol have been grown by the slow evaporation method. The grown crystal was subjected to the single crystal X-ray diffraction analysis, to confirm that it belongs to the monoclinic crystal structure, with space group P21. The optical transmission study reveals the transparency of the crystal in the entire visible region and the cut off wave length has been found to be 320 nm. The optical band gap is found to be 3.87 eV. The transmittance of the L-phenylalanine-4-nitrophenol crystal has been used to calculate the refractive index (n), the extinction coefficient (K) and the real (εr) and imaginary (εi) components of the dielectric constant. The mechanical behaviour of the grown crystals was studied using Vicker’s microhardness tester. The dielectric constant and dielectric loss of L-phenylalanine-4-nitrophenol are measured in the frequency range of 50 Hz to 5 MHz at different temperatures. The photoconductivity study confirms the negative photoconductive nature of the sample.

<i>In-Situ</i>Measurements of the Photoconductivity of Multi-Layered Organic Photovoltaic Devices Using Impedance Spectroscopy

In-situ impedance spectroscopy (IS) observations of the photoconductivity of the carriers induced by photo-irradiation in organic hetero-junction structured photovoltaic devices are presented. In the IS measurements, the externally applied voltage and the dependence of the light intensity applied to the device were investigated. Analysis of the frequency characteristics which was measured by changing the light intensity shows there is a proportional relationship between the changes in the conductivities of the two components. The mobilities of the CuPc and C60 layers were calculated from the conductivities and were in the orders of 10﹣4 and 10﹣3 cm2/Vs, respectively.

Photoconductivity under Pulsed Excitation

Ever since its mid nineteenth century inauguration, the logistic function and its numerous applications have received a great deal of attention from engineers, and natural and social scientists. In particular, its discrete relative, the logistic map, has proven to be a principal and indispensable tool of scientists in their effort to describe the dynamics of a variety of physical and biological systems. Our purpose in this paper is to describe one such application, namely, photoconductivity under pulsed excitation and show that the solution of the energy-independent kinetic rate equation for electron density can be expressed as a logistic map.

A Junction Electric Field Determination of a Bifacial Silicon Solar Cell under a Constant Magnetic Field Effect by Using the Photoconductivity Method

In this work, a theory based on the steady photoconductivity method, of a bifacial silicon solar cell under polychromatic illumination and a magnetic field effect, is presented. The resolution of the continuity equation in the base of the solar cell, allowed us to establish the expression of the minority carriers’ density from which the photoconductivity, the photocurrent density, the photovoltage and the solar output power as function of the junction recombination velocity and the applied magnetic field, were deduced. From I-V and P-V characteristics of the solar cell, optimal photovoltage and optimal photocurrent obtained at the maximum power point corresponding to a given operating point which is correlated to an optimal junction recombination velocity, were determined according to the magnetic field. By means of the relation between the photocurrent density and the photoconductivity, the junction electric field has been determined at a given optimal junction recombination velocity.