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Effect Research of Immobilized Algae-bacteria Removal Ammonia Nitrogen of Aquaculture Wastewater and Proposed Model 被引量:14
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作者 邹万生 张景来 +1 位作者 刘良国 邓武军 《Agricultural Science & Technology》 CAS 2010年第5期117-120,共4页
Applied Immobilized algae bacteria (ABI) to remove ammonia of freshwater aquaculture wastewater. Temperature (T),PH,light intensity (I),dissolved oxygen (DO) and filling rate five factors plays important role in the p... Applied Immobilized algae bacteria (ABI) to remove ammonia of freshwater aquaculture wastewater. Temperature (T),PH,light intensity (I),dissolved oxygen (DO) and filling rate five factors plays important role in the process of ammonia nitrogen removal ,related data between ammonia removal and five factors was received through multi-factor orthogonal test,and established relations model between the five factor and nitrogen removal. The results show that five-factors had significant effect on AR,and the best combinations for removing AR was temperature 30 ℃,pH=7.0,light intensity 6 000 lux,dissolved oxygen 5.0 mg/L and the fill rate 10%. According to the experimental data,equation model was proposed and coefficient of determination R2 =0.864 8,P<0.05. Samples T-test was done between the model predictions and the actual measured values.Test results showed that the significant difference of overall mean value sig. (2-tailed) was 0.978 (P>0.05),it Shows that had no significant difference between model predictions and the actual measured value,and model had a high degree of fitting. 展开更多
关键词 Immobilized Algae-bacteria Aquaculture wastewater Ammonia remove rate Proposed model
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Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire 被引量:2
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作者 Mufang ZHOU Min ZHONG Wenhu XU 《Friction》 SCIE EI CAS CSCD 2023年第11期2073-2090,共18页
Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material... Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology. 展开更多
关键词 SAPPHIRE ultrasonic-assisted chemical mechanical polishing(UA-CMP) material removal rate(MRR)predictive model atomic force microscopy(AFM)in-situ studies computational fluid dynamics(CFD)
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