A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by th...A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.展开更多
The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices...The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.展开更多
In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interf...In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interface in this structure, is given according to the experiment. The results show that the inverted pyramids surface has a low refection about 8%, in the anisotropic etching 70 ℃, 5% TMAH concentration, corrosion time of 90 min or 30 rain. Low refection means high light emitting rate. Most of the structure and manufacturing process can be compatible with planar CMOS technology, which makes the silicon LED greater potential for development in the future.展开更多
文摘A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
基金National Natural Science Foundation Subject(60536030,60676038)Tianjin Key Basic Research Project(06YFJZJC00200)
文摘The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.
文摘In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interface in this structure, is given according to the experiment. The results show that the inverted pyramids surface has a low refection about 8%, in the anisotropic etching 70 ℃, 5% TMAH concentration, corrosion time of 90 min or 30 rain. Low refection means high light emitting rate. Most of the structure and manufacturing process can be compatible with planar CMOS technology, which makes the silicon LED greater potential for development in the future.
