Theoretical Study on the Reaction of PCl_3/H_2 on Silicon Substrate Surface

The reaction mechanism of PCl3/H2 on silicon substrate surface （simulated by Si4 cluster） was investigated with Density Functional Theory （DFT） at the B3LYP/6-311G^＊＊ level. On silicon substrate, PCl3 firstly undergoes dissociative adsorption, and then the adsorption product reacts with H2 via a four-step multi-channel mode to give the final product PSi4 cluster. The geometries at each stationary point were fully optimized. The possible transition states were determined by vibrational mode analysis and IRC verification. And finally, the main reaction channel was given.

Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator HFSS.While varying geometrical parameters such as the number of turns(N),the width of the metal traces(W),the spacing between the traces(S),and the inner diameter(ID),changes in the performance of the inductors are analyzed in detail.The reasons for these changes in performance are presented.Simulation results indicate that the performance of an integrated spiral inductor can be improved by optimizing its layout.Some design rules are summarized.

Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.

Dielectric layer-dependent surface plasmon effect of metallic nanoparticles on silicon substrate

The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of dielectric layers with different thicknesses leads to the varied resonance wavelength and scattering cross section and consequently the shifted photocurrent response for all wavelengths. These different behaviours are determined by whether the dielectric layer is beyond the domain where the elcetric field of metallic plasmons takes effect, combined with the effect of geometrical optics. It is revealed that for particles of a certain size, an appropriate dielectric thickness is desirable to achieve the best absorption. For a certain thickness of spacer, an appropriate granular size is also desirable. These observations have substantial applications for the optimization of surface plasmon enhanced silicon solar cells.

Selective growth of carbon nanotube on silicon substrates

The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies, and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates

This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro-and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV)is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.

Fabrication of pillar-array superhydrophobic silicon surface and thermodynamic analysis on the wetting state transition

Textured silicon （Si） substrates decorated with regular microscale square pillar arrays of nearly the same side length, height, but different intervals are fabricated by inductively coupled plasma, and then silanized by self-assembly octadecyl- trichlorosilane （OTS） film. The systematic water contact angle （CA） measurements and micro/nanoscale hierarchical rough structure models are used to analyze the wetting behaviors of original and silanized textured Si substrates each as a function of pillar interval-to-width ratio. On the original textured Si substrate with hydrophilic pillars, the water droplet possesses a larger apparent CAs （〉 90~） and contact angle hysteresis （CAH）, induced by the hierarchical roughness of microscale pil- lar arrays and nanoscale pit-like roughness. However, the silanized textured substrate shows superhydrophobicity induced by the low free energy OTS overcoat and the hierarchical roughness of microscale pillar arrays, and nanoscale island-like roughness. The largest apparent CA on the superhydrophobic surface is 169.8~. In addition, the wetting transition of a gently deposited water droplet is observed on the original textured substrate with pillar interval-to-width ratio increasing. Furthermore, the wetting state transition is analyzed by thermodynamic approach with the consideration of the CAH effect. The results indicate that the wetting state changed from a Cassie state to a pseudo-Wenzel during the transition.

The influence of an Si_xN_y interlayer on a GaN film grown on an Si(111) substrate

A method to drastically reduce dislocation density in a GaN film grown on an Si（111） substrate is newly developed. In this method, the SixNy interlayer which is deposited on an A1N buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is successfully grown on an Si（lll） substrate. A synthesized GaN epilayer is characterized by X-ray diffraction （XRD）, atomic force microscope （AFM）, and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the （0001） crystal orientation and the full width at half maximum of the X-ray diffraction curve in the （0002） plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an SixNy interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the SizNy interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing an SixNy interlayer.

Complex fitting 3D closed-form Green's function and its application for silicon RF IC's

An approximate three-dimensional closed-form Green's function with the type of exponential function is derived over a lossy multilayered substrate by means of the Fourier transforms and a novel complex fitting approach. This Green's function is used to extract the capacitance matrix for an arbitrary three-dimensional arrangement of conductors located anywhere in the silicon IC substrate. Using this technique, the substrate loss in silicon integrated circuits can be analyzed. An example of inductor modeling is presented to show that the technique is quite effective.

Structural evolution of silicone oil liquid exposed to Ar plasma

Structure properties of silicone oil serving as a liquid substrate exposed to Ar plasma axe investigated in this paper. Under the action of energetic Ar ions, the surface of silicone oil liquid substrate exhibits a branch-like fractal aggregation structure, which is related to the structure evolution of silicone oil liquid from Si-O chain to Silo network. The radicals from the dissociation of silicone oil molecule into the Ar plasma turns the plasma into a reactive environment. Therefore, the structural evolution of silicone oil liquid substrate and the reactive radicals in the plasma space become possible factors to affect the aggregation of nanopaxticles and also the structures and the compositions of nanopaxticles.

Fabrication of curved micro structures on photoresist layer

A novel fabrication process for micro patterns with curvature was introduced. The curved structures were made by compensating rectangular micro structures with liquid photoresist layer. Because of the surface tension of the liquid in micro scale, various shapes of meniscus can he made on the micro channels. The micro channels were made on the silicon suhstrate in advance, and then the liquid layer was coated on the micro channels. From the nature of liquid behavior, the curved patterns with smooth surface are obtained, which cannot be made easily with the conventional mechanical machining, as well as with the microfabrication processes, such as wet and dry etching. With this principle, it is expected that the smooth and curved surfaces can be made by simple processes and the results can be applied widely, such as optical patterns.

Status of GaN-based green light-emitting diodes

GaN-based blue light emitting diodes （LEDs） have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency （EQE） of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantu.m well （QW） with low strain. Many techniques of improving efficiency are discussed, such as inserting A1GaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported： high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature

Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.

Study on the influence of standoff distance on substrate damage under an abrasive water jet process by molecular dynamics simulation

The process of a cluster-containing water jet impinging on a monocrystalline silicon substrate was studied by molecular dynamics simulation. The results show that as the standoff distance increases, the jet will gradually diverge. As a result, the solidified water film between the cluster and the substrate becomes "thicker" and "looser". The "thicker" and "looser" water film will then consume more input energy to achieve complete solidification, resulting in the stress region and the high-pressure region of the silicon substrate under small standoff distances to be significantly larger than those under large standoff distances. Therefore, the degree of damage sustained by the substrate will first experience a small change and then decrease quickly as the standoff distance increases. In summary, the occurrence and maintenance of complete solidification of the confined water film between the cluster and the substrate plays a decisive role in the level of damage formation on the silicon substrate. These findings are helpful for exploring the mechanism of an abrasive water jet.

Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates

Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si(001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.

Preparation of GaN-on-Si based thin-film flip-chip LEDs

GaN based MQW epitaxial layers were grown on Si （111） substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design. The blue and white 1.1 × 1.1 mm2 LED lamps are measured. The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW, and 50.3% at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm.

Improving the quality factor of an RF spiral inductor with non-uniform metal width and non-uniform coil spacing

An improved inductor layout with non-uniform metal width and non-uniform spacing is proposed to increase the quality factor（Q factor）.For this inductor layout,from outer coil to inner coil,the metal width is reduced by an arithmetic-progression step,while the metal spacing is increased by a geometric-progression step. An improved layout with variable width and changed spacing is of benefit to the Q factor of RF spiral inductor improvement（approximately 42.86%）,mainly due to the suppression of eddy-current loss by weakening the current crowding effect in the center of the spiral inductor.In order to increase the Q factor further,for the novel inductor, a patterned ground shield is used with optimized layout together.The results indicate that,in the range of 0.5 to 16 GHz,the Q factor of the novel inductor is at an optimum,which improves by 67%more than conventional inductors with uniform geometry dimensions（equal width and equal spacing）,is enhanced by nearly 23%more than a PGS inductor with uniform geometry dimensions,and improves by almost 20%more than an inductor with an improved layout.