There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commerci...There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commercial 3.3/ 5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops. High current and highvoltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different laydut parameters and 19V for the pMOS transistors are achieved. This paper also presents the insulation technology and characterization results for these high-voltage devices.展开更多
At 12.8 MHz center frequency,the advanced miniaturized polymer-based planar high quality factor(Q)passive elements embedded bandpassfilter works in the L-band.Because most of the demands operate inside the spectrum,the...At 12.8 MHz center frequency,the advanced miniaturized polymer-based planar high quality factor(Q)passive elements embedded bandpassfilter works in the L-band.Because most of the demands operate inside the spectrum,the wideband or high-speed operation necessary to enhance must be acquired in microwave frequency ranges.The channel has a quiet,high-performance micro-filter with wideband rejection.Capacitors and inductors are used in the high quality factor(Q)passive components,and related networks are incorporated in thefilter.Embedded layers are concatenated using Three-Dimensional Integrated Circuit(3D-IC)integration,parasitics are removed,and interconnection losses are negotiated using de-embedding methods.A wireless application-based Liquid Crystalline Polymer(LCP)viewpoint is employed as a substrate material in this work.The polymer processes,their properties,and the incorporated high-Q Band Pass Filter Framework.The suggestedfilter model is computed and manufactured utilizing the L-band frequency spectrum,decreasing total physical length by 31%while increasing bandwidth by 45%.展开更多
Developing an efficient and robust lightweight graphic user interface (GUI) for industry process monitoring is always a challenging task. Current implementation methods for embedded GUI are with the matters of real-...Developing an efficient and robust lightweight graphic user interface (GUI) for industry process monitoring is always a challenging task. Current implementation methods for embedded GUI are with the matters of real-time processing and ergonomics performance. To address the issue, an embedded lightweight GUI component library design method based on quasar technology embedded (Qt/E) is proposed. First, an entity-relationship (E-R) model for the GUI library is developed to define the functional framework and data coupling relations. Second, a cross-compilation environment is constructed, and the QI/E shared library files are tailored to satisfy the requirements of embedded target systems. Third, by using the signal-slot communication interfaces, a message mapping mechanism that does not require a call-back pointer is developed, and the context switching performance is improved. According to the multi-thread method, the parallel task processing capabilities fbr data collection, calculation, and display are enhanced, and the real-time performance and robustness are guaranteed. Finally, the human-computer interaction process is optimized by a scrolling page method, and the ergonomics pertbrmance is verified by the industrial psychology methods Two numerical cases and five industrial experiments show that the proposed method can increase real-time read-write correction ratios by more than 26% and 29%, compared with Windows-CE-GUl and Android-GUl, respectively. The component library can be tailored to 900 KB and supports 12 hardware platforms. The average session switch time can be controlled within 0.6 s and six key indexes for ergonomics are verified by different industrial applications.展开更多
文摘There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits. In this paper,high-voltage nand p-type MOSFETs are fabricated in a commercial 3.3/ 5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops. High current and highvoltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different laydut parameters and 19V for the pMOS transistors are achieved. This paper also presents the insulation technology and characterization results for these high-voltage devices.
文摘At 12.8 MHz center frequency,the advanced miniaturized polymer-based planar high quality factor(Q)passive elements embedded bandpassfilter works in the L-band.Because most of the demands operate inside the spectrum,the wideband or high-speed operation necessary to enhance must be acquired in microwave frequency ranges.The channel has a quiet,high-performance micro-filter with wideband rejection.Capacitors and inductors are used in the high quality factor(Q)passive components,and related networks are incorporated in thefilter.Embedded layers are concatenated using Three-Dimensional Integrated Circuit(3D-IC)integration,parasitics are removed,and interconnection losses are negotiated using de-embedding methods.A wireless application-based Liquid Crystalline Polymer(LCP)viewpoint is employed as a substrate material in this work.The polymer processes,their properties,and the incorporated high-Q Band Pass Filter Framework.The suggestedfilter model is computed and manufactured utilizing the L-band frequency spectrum,decreasing total physical length by 31%while increasing bandwidth by 45%.
基金Project supported by the National Natural Science Foundation of China(Nos.51775501,51375446,U1509212,and 51405441)the Zhejiang Provincial Natural Science Foundation,China(No.LR16E050001)the Zhejiang Provincial Health Department Program,China(No.2015KYA067)
文摘Developing an efficient and robust lightweight graphic user interface (GUI) for industry process monitoring is always a challenging task. Current implementation methods for embedded GUI are with the matters of real-time processing and ergonomics performance. To address the issue, an embedded lightweight GUI component library design method based on quasar technology embedded (Qt/E) is proposed. First, an entity-relationship (E-R) model for the GUI library is developed to define the functional framework and data coupling relations. Second, a cross-compilation environment is constructed, and the QI/E shared library files are tailored to satisfy the requirements of embedded target systems. Third, by using the signal-slot communication interfaces, a message mapping mechanism that does not require a call-back pointer is developed, and the context switching performance is improved. According to the multi-thread method, the parallel task processing capabilities fbr data collection, calculation, and display are enhanced, and the real-time performance and robustness are guaranteed. Finally, the human-computer interaction process is optimized by a scrolling page method, and the ergonomics pertbrmance is verified by the industrial psychology methods Two numerical cases and five industrial experiments show that the proposed method can increase real-time read-write correction ratios by more than 26% and 29%, compared with Windows-CE-GUl and Android-GUl, respectively. The component library can be tailored to 900 KB and supports 12 hardware platforms. The average session switch time can be controlled within 0.6 s and six key indexes for ergonomics are verified by different industrial applications.