It is challenging for aqueous Zn-ion batteries(ZIBs)to achieve comparable low-temperature(low-T)performance due to the easy-frozen electrolyte and severe Zn dendrites.Herein,an aqueous electrolyte with a low freezing ...It is challenging for aqueous Zn-ion batteries(ZIBs)to achieve comparable low-temperature(low-T)performance due to the easy-frozen electrolyte and severe Zn dendrites.Herein,an aqueous electrolyte with a low freezing point and high ionic conductivity is proposed.Combined with molecular dynamics simulation and multi-scale interface analysis(time of flight secondary ion mass spectrometry threedimensional mapping and in-situ electrochemical impedance spectroscopy method),the temperature independence of the V_(2)O_(5)cathode and Zn anode is observed to be opposite.Surprisingly,dominated by the solvent structure of the designed electrolyte at low temperatures,vanadium dissolution/shuttle is significantly inhibited,and the zinc dendrites caused by this electrochemical crosstalk are greatly relieved,thus showing an abnormal temperature inversion effect.Through the disclosure and improvement of the above phenomena,the designed Zn||V_(2)O_(5)full cell delivers superior low-T performance,maintaining almost 99%capacity retention after 9500 cycles(working more than 2500 h)at-20°C.This work proposes a kind of electrolyte suitable for low-T ZIBs and reveals the inverse temperature dependence of the Zn anode,which might offer a novel perspective for the investigation of low-T aqueous battery systems.展开更多
Based on the force-heat equivalence energy density principle,a theoretical model for magnetic metallic materials is developed,which characterizes the temperature-dependent magnetic anisotropy energy by considering the...Based on the force-heat equivalence energy density principle,a theoretical model for magnetic metallic materials is developed,which characterizes the temperature-dependent magnetic anisotropy energy by considering the equivalent relationship between magnetic anisotropy energy and heat energy;then the relationship between the magnetic anisotropy constant and saturation magnetization is considered.Finally,we formulate a temperature-dependent model for saturation magnetization,revealing the inherent relationship between temperature and saturation magnetization.Our model predicts the saturation magnetization for nine different magnetic metallic materials at different temperatures,exhibiting satisfactory agreement with experimental data.Additionally,the experimental data used as reference points are at or near room temperature.Compared to other phenomenological theoretical models,this model is considerably more accessible than the data required at 0 K.The index included in our model is set to a constant value,which is equal to 10/3 for materials other than Fe,Co,and Ni.For transition metals(Fe,Co,and Ni in this paper),the index is 6 in the range of 0 K to 0.65T_(cr)(T_(cr) is the critical temperature),and 3 in the range of 0.65T_(cr) to T_(cr),unlike other models where the adjustable parameters vary according to each material.In addition,our model provides a new way to design and evaluate magnetic metallic materials with superior magnetic properties over a wide range of temperatures.展开更多
Heat transfers due to MHD-conjugate free convection from the isothermal horizontal circular cylinder while viscosity is a function of temperature is investigated. The governing equations of the flow and connected boun...Heat transfers due to MHD-conjugate free convection from the isothermal horizontal circular cylinder while viscosity is a function of temperature is investigated. The governing equations of the flow and connected boundary conditions are made dimensionless using a set of non-dimensional parameters. The governing equations are solved numerically using the finite difference method. Numerical results are obtained for various values of viscosity variation parameter, Prandtl number, magnetic parameter, and conjugate conduction parameter for the velocity and the temperature within the boundary layer as well as the skin friction coefficients and heat transfer rate along the surface.展开更多
Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the (100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperature...Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the (100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.展开更多
Uniaxial compressive experiments of ultrafine-grained Al fabricated by equal channel angular pressing(ECAP) method were performed at wide temperature and strain rate range. The influence of temperature on flow stress,...Uniaxial compressive experiments of ultrafine-grained Al fabricated by equal channel angular pressing(ECAP) method were performed at wide temperature and strain rate range. The influence of temperature on flow stress, strain hardening rate and strain rate sensitivity was investigated experimentally. The results show that both the effect of temperature on flow stress and its strain rate sensitivity of ECAPed Al is much larger than those of the coarse-grained Al. The temperature sensitivity of ultrafine-grained Al is comparatively weaker than that of the coarse-grained Al. Based on the experimental results, the apparent activation volume was estimated at different temperatures and strain rates. The forest dislocation interactions is the dominant thermally activated mechanism for ECAPed Al compressed at quasi-static strain rates, while the viscous drag plays an important role at high strain rates.展开更多
We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interac...We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interaction between an electron and thermal phonons and to thermal expansion. For a one-dimensional Li atom lattice chain, under the chosen parameters,the width of the ls and 2s energy bands narrows as the temperature increases and the energy-gap width between the two bands widens. These results agree qualitatively with those observed experimentally. Studying temperature dependence of the energy-band structure is of great importance for understanding optical and transporting characteristics of a solid.展开更多
The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica...The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.展开更多
The aim of this work is firstly to optimize T6 heat-treatment of low-pressure sand-cast Mg-10Gd-3Y-0.5Zr alloy,and then systematically investigate the mechanical behavior of the T6-treated alloy from room temperature ...The aim of this work is firstly to optimize T6 heat-treatment of low-pressure sand-cast Mg-10Gd-3Y-0.5Zr alloy,and then systematically investigate the mechanical behavior of the T6-treated alloy from room temperature to 300℃.It turned out that the optimum T6 heat-treatments for the tested alloy are 525℃×12 h+225℃×14 h and 525℃×12 h+250℃×12 h which integrated age-hardening and tensile properties into account,respectively.The strength of the T6-treated alloy indicates obvious anomalous temperature dependence from room temperature to 300℃,namely both ultimate tensile strength and yield strength of the tested alloy firstly increase with tensile temperature,and then decrease as temperature increases further.Elongation increased with temperature monotonously.The tensile fracture mode of the tested alloy changes from transgranular fracture to intergranular fracture with the increasing of test temperature.展开更多
The temperature dependences of forward voltage drop(VF) of the fast recovery diodes(FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study a...The temperature dependences of forward voltage drop(VF) of the fast recovery diodes(FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones.Based on deep level transient spectroscopy(DLTS) measurements, a new level E6(EC-0.376 e V) is found in the combined lifetime treated(CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VFresults of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD.展开更多
In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, the...In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.展开更多
The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN he...The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.展开更多
The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value ...The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.展开更多
A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional nu...A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.展开更多
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studi...Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.展开更多
In this paper, we construct the equations of generalized thermoelasicity for a non-homogeneous isotropic hollow cylider with a variable modulus of elasticity and thermal conductivity based on the Lord and Shulman theo...In this paper, we construct the equations of generalized thermoelasicity for a non-homogeneous isotropic hollow cylider with a variable modulus of elasticity and thermal conductivity based on the Lord and Shulman theory. The problem has been solved numerically using the finite element method. Numerical results for the displacement, the temperature, the radial stress, and the hoop stress distributions are illustrated graphically. Comparisons are made between the results predicted by the coupled theory and by the theory of generalized thermoelasticity with one relaxation time in the cases of temperature dependent and independent modulus of elasticity.展开更多
In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltag...In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.展开更多
The steady-state fluorescence spectra and molecular dynamics simulations were explored to investigate the temperature dependent organization in some imidazolium ionic liquids:1-butyl-3-methylimidazolium hexafluo-roph...The steady-state fluorescence spectra and molecular dynamics simulations were explored to investigate the temperature dependent organization in some imidazolium ionic liquids:1-butyl-3-methylimidazolium hexafluo-rophosphate([bmim][PF6]),1-ethyl-3-methylimidazolium ethylsulfate([emim][EtSO4]) and 1-butyl-3-methylimida-zolium tetrafluoroborate([bmim][BF4]).The pure room temperature ionic liquids(ILs) exhibit a large red shift at more than an excitation wavelength of around 340 nm,which demonstrates the heterogeneous nature of the liquids.Furthermore,the fluorescence spectra of the ionic liquids were found to be temperature-dependent.The emission intensity gradually decreased with increasing temperature for the neat ionic liquids and the mixed solutions of [bmim][BF4]-H2O,which was the special phenomena induced by not only the local structure but also the viscosity.The molecular dynamics simulation further confirms that the structures of ionic liquids are sensitive to the surroun-ding environment because of the aggregation degree of ILs.展开更多
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth condi...The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 (TO), E1 (TO) and A1 (LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 (TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 (TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 (LOPC) mode in 4H-SiC.展开更多
Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows depende...Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows dependence on temperature, as well as, level of doping. The conductivity is considered to be due to thermal hopping motion of localized charge carriers,which are believed to be polarons, in the temperature range 303 K to 323 K and for T>343 K,whereas. it is metal-like in the temperature range 323 K to 343 K展开更多
The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photol...The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4- luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at room temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed.展开更多
基金financially supported by the National Natural Science Foundation of China(52372191)the Natural Science Foundation of Xiamen,China(3502Z202372036)+1 种基金the China Postdoctoral Science Foundation(2022TQ0282)the support of the High-Performance Computing Center(HPCC)at Harbin Institute of Technology on first-principles calculations。
文摘It is challenging for aqueous Zn-ion batteries(ZIBs)to achieve comparable low-temperature(low-T)performance due to the easy-frozen electrolyte and severe Zn dendrites.Herein,an aqueous electrolyte with a low freezing point and high ionic conductivity is proposed.Combined with molecular dynamics simulation and multi-scale interface analysis(time of flight secondary ion mass spectrometry threedimensional mapping and in-situ electrochemical impedance spectroscopy method),the temperature independence of the V_(2)O_(5)cathode and Zn anode is observed to be opposite.Surprisingly,dominated by the solvent structure of the designed electrolyte at low temperatures,vanadium dissolution/shuttle is significantly inhibited,and the zinc dendrites caused by this electrochemical crosstalk are greatly relieved,thus showing an abnormal temperature inversion effect.Through the disclosure and improvement of the above phenomena,the designed Zn||V_(2)O_(5)full cell delivers superior low-T performance,maintaining almost 99%capacity retention after 9500 cycles(working more than 2500 h)at-20°C.This work proposes a kind of electrolyte suitable for low-T ZIBs and reveals the inverse temperature dependence of the Zn anode,which might offer a novel perspective for the investigation of low-T aqueous battery systems.
基金Project supported by the Natural Science Foundation of Chongqing(Grant No.CSTB2022NSCQ-MSX0391)。
文摘Based on the force-heat equivalence energy density principle,a theoretical model for magnetic metallic materials is developed,which characterizes the temperature-dependent magnetic anisotropy energy by considering the equivalent relationship between magnetic anisotropy energy and heat energy;then the relationship between the magnetic anisotropy constant and saturation magnetization is considered.Finally,we formulate a temperature-dependent model for saturation magnetization,revealing the inherent relationship between temperature and saturation magnetization.Our model predicts the saturation magnetization for nine different magnetic metallic materials at different temperatures,exhibiting satisfactory agreement with experimental data.Additionally,the experimental data used as reference points are at or near room temperature.Compared to other phenomenological theoretical models,this model is considerably more accessible than the data required at 0 K.The index included in our model is set to a constant value,which is equal to 10/3 for materials other than Fe,Co,and Ni.For transition metals(Fe,Co,and Ni in this paper),the index is 6 in the range of 0 K to 0.65T_(cr)(T_(cr) is the critical temperature),and 3 in the range of 0.65T_(cr) to T_(cr),unlike other models where the adjustable parameters vary according to each material.In addition,our model provides a new way to design and evaluate magnetic metallic materials with superior magnetic properties over a wide range of temperatures.
文摘Heat transfers due to MHD-conjugate free convection from the isothermal horizontal circular cylinder while viscosity is a function of temperature is investigated. The governing equations of the flow and connected boundary conditions are made dimensionless using a set of non-dimensional parameters. The governing equations are solved numerically using the finite difference method. Numerical results are obtained for various values of viscosity variation parameter, Prandtl number, magnetic parameter, and conjugate conduction parameter for the velocity and the temperature within the boundary layer as well as the skin friction coefficients and heat transfer rate along the surface.
基金Project(51205302)supported by the National Natural Science Foundation of ChinaProject(2013JM7017)supported by the Natural Science Basic Research Plan in Shanxi Province of ChinaProject(K5051304006)supported by the Fundamental Research Funds for the Central Universities,China
文摘Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the (100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.
基金Projects(11272267,11102168,10932008)supported by the National Natural Science Foundation of ChinaProject(B07050)supported by Northwestern Polytechnical University
文摘Uniaxial compressive experiments of ultrafine-grained Al fabricated by equal channel angular pressing(ECAP) method were performed at wide temperature and strain rate range. The influence of temperature on flow stress, strain hardening rate and strain rate sensitivity was investigated experimentally. The results show that both the effect of temperature on flow stress and its strain rate sensitivity of ECAPed Al is much larger than those of the coarse-grained Al. The temperature sensitivity of ultrafine-grained Al is comparatively weaker than that of the coarse-grained Al. Based on the experimental results, the apparent activation volume was estimated at different temperatures and strain rates. The forest dislocation interactions is the dominant thermally activated mechanism for ECAPed Al compressed at quasi-static strain rates, while the viscous drag plays an important role at high strain rates.
文摘We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interaction between an electron and thermal phonons and to thermal expansion. For a one-dimensional Li atom lattice chain, under the chosen parameters,the width of the ls and 2s energy bands narrows as the temperature increases and the energy-gap width between the two bands widens. These results agree qualitatively with those observed experimentally. Studying temperature dependence of the energy-band structure is of great importance for understanding optical and transporting characteristics of a solid.
文摘The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.
基金This work is supported by National Natural Science Foundation of China(Nos.51771115 and 51775334)National Science and Technology Major Project(2017ZX04006001)+1 种基金Joint Fund for Space Science and Technology(6141B06300401 and 6141B06310106)Science Innovation Foundation of Shanghai Academy of Spaceflight Technology(No.SAST2016048).
文摘The aim of this work is firstly to optimize T6 heat-treatment of low-pressure sand-cast Mg-10Gd-3Y-0.5Zr alloy,and then systematically investigate the mechanical behavior of the T6-treated alloy from room temperature to 300℃.It turned out that the optimum T6 heat-treatments for the tested alloy are 525℃×12 h+225℃×14 h and 525℃×12 h+250℃×12 h which integrated age-hardening and tensile properties into account,respectively.The strength of the T6-treated alloy indicates obvious anomalous temperature dependence from room temperature to 300℃,namely both ultimate tensile strength and yield strength of the tested alloy firstly increase with tensile temperature,and then decrease as temperature increases further.Elongation increased with temperature monotonously.The tensile fracture mode of the tested alloy changes from transgranular fracture to intergranular fracture with the increasing of test temperature.
基金Project supported by the Doctoral Fund of Ministry of Education of China(Grant No.20111103120016)the State Grid Corporation of China Program of Science and Technology,China(Grant No.5455DW140003)
文摘The temperature dependences of forward voltage drop(VF) of the fast recovery diodes(FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones.Based on deep level transient spectroscopy(DLTS) measurements, a new level E6(EC-0.376 e V) is found in the combined lifetime treated(CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VFresults of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD.
基金supported partially by the Important National Science&Technology Specific Projects,China(Grant No.2013ZX02503003)
文摘In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,60736033,60890193,and 10774001)
文摘The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61006060)the 13115 Innovation Engineering of Shaanxi, China (Grant No. 2008ZDKG-30)the Key Laboratory Fund of Ministry of Education, China (Grant No. JY0100112501)
文摘The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.
基金Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004)
文摘A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006)
文摘Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.
文摘In this paper, we construct the equations of generalized thermoelasicity for a non-homogeneous isotropic hollow cylider with a variable modulus of elasticity and thermal conductivity based on the Lord and Shulman theory. The problem has been solved numerically using the finite element method. Numerical results for the displacement, the temperature, the radial stress, and the hoop stress distributions are illustrated graphically. Comparisons are made between the results predicted by the coupled theory and by the theory of generalized thermoelasticity with one relaxation time in the cases of temperature dependent and independent modulus of elasticity.
基金Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004)the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014)
文摘In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.
基金Supported by the National Natural Science Foundation of China(No.20973192,11079007)
文摘The steady-state fluorescence spectra and molecular dynamics simulations were explored to investigate the temperature dependent organization in some imidazolium ionic liquids:1-butyl-3-methylimidazolium hexafluo-rophosphate([bmim][PF6]),1-ethyl-3-methylimidazolium ethylsulfate([emim][EtSO4]) and 1-butyl-3-methylimida-zolium tetrafluoroborate([bmim][BF4]).The pure room temperature ionic liquids(ILs) exhibit a large red shift at more than an excitation wavelength of around 340 nm,which demonstrates the heterogeneous nature of the liquids.Furthermore,the fluorescence spectra of the ionic liquids were found to be temperature-dependent.The emission intensity gradually decreased with increasing temperature for the neat ionic liquids and the mixed solutions of [bmim][BF4]-H2O,which was the special phenomena induced by not only the local structure but also the viscosity.The molecular dynamics simulation further confirms that the structures of ionic liquids are sensitive to the surroun-ding environment because of the aggregation degree of ILs.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61176085,11474365 and 61377055the Department of Education of Guangdong Province under Grant No gjhz1103the Open-Project Program of the State Key laboratory of Opto-Electronic Material and Technologies of Sun Yatsen University
文摘The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 (TO), E1 (TO) and A1 (LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 (TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 (TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 (LOPC) mode in 4H-SiC.
文摘Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows dependence on temperature, as well as, level of doping. The conductivity is considered to be due to thermal hopping motion of localized charge carriers,which are believed to be polarons, in the temperature range 303 K to 323 K and for T>343 K,whereas. it is metal-like in the temperature range 323 K to 343 K
文摘The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4- luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at room temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed.