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Temperature inversion enables superior stability for low-temperature Zn-ion batteries
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作者 Fu-Da Yu Zhe-Jian Yi +10 位作者 Rui-Yang Li Wei-Hao Lin Jie Chen Xiao-Yue Chen Yi-Ming Xie Ji-Huai Wu Zhang Lan Lan-Fang Que Bao-Sheng Liu Hao Luo Zhen-Bo Wang 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2024年第4期245-253,共9页
It is challenging for aqueous Zn-ion batteries(ZIBs)to achieve comparable low-temperature(low-T)performance due to the easy-frozen electrolyte and severe Zn dendrites.Herein,an aqueous electrolyte with a low freezing ... It is challenging for aqueous Zn-ion batteries(ZIBs)to achieve comparable low-temperature(low-T)performance due to the easy-frozen electrolyte and severe Zn dendrites.Herein,an aqueous electrolyte with a low freezing point and high ionic conductivity is proposed.Combined with molecular dynamics simulation and multi-scale interface analysis(time of flight secondary ion mass spectrometry threedimensional mapping and in-situ electrochemical impedance spectroscopy method),the temperature independence of the V_(2)O_(5)cathode and Zn anode is observed to be opposite.Surprisingly,dominated by the solvent structure of the designed electrolyte at low temperatures,vanadium dissolution/shuttle is significantly inhibited,and the zinc dendrites caused by this electrochemical crosstalk are greatly relieved,thus showing an abnormal temperature inversion effect.Through the disclosure and improvement of the above phenomena,the designed Zn||V_(2)O_(5)full cell delivers superior low-T performance,maintaining almost 99%capacity retention after 9500 cycles(working more than 2500 h)at-20°C.This work proposes a kind of electrolyte suitable for low-T ZIBs and reveals the inverse temperature dependence of the Zn anode,which might offer a novel perspective for the investigation of low-T aqueous battery systems. 展开更多
关键词 Aqueous Zn-ion batteries Low-temperature performance Opposite temperature dependence Zndendrite growth Vanadium dissolution
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Theoretical characterization of the temperature-dependent saturation magnetization of magnetic metallic materials
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作者 吴金龙 董攀 +6 位作者 贺屹 马艳丽 李梓源 姚沁远 邱俊 麻建坐 李卫国 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第7期577-585,共9页
Based on the force-heat equivalence energy density principle,a theoretical model for magnetic metallic materials is developed,which characterizes the temperature-dependent magnetic anisotropy energy by considering the... Based on the force-heat equivalence energy density principle,a theoretical model for magnetic metallic materials is developed,which characterizes the temperature-dependent magnetic anisotropy energy by considering the equivalent relationship between magnetic anisotropy energy and heat energy;then the relationship between the magnetic anisotropy constant and saturation magnetization is considered.Finally,we formulate a temperature-dependent model for saturation magnetization,revealing the inherent relationship between temperature and saturation magnetization.Our model predicts the saturation magnetization for nine different magnetic metallic materials at different temperatures,exhibiting satisfactory agreement with experimental data.Additionally,the experimental data used as reference points are at or near room temperature.Compared to other phenomenological theoretical models,this model is considerably more accessible than the data required at 0 K.The index included in our model is set to a constant value,which is equal to 10/3 for materials other than Fe,Co,and Ni.For transition metals(Fe,Co,and Ni in this paper),the index is 6 in the range of 0 K to 0.65T_(cr)(T_(cr) is the critical temperature),and 3 in the range of 0.65T_(cr) to T_(cr),unlike other models where the adjustable parameters vary according to each material.In addition,our model provides a new way to design and evaluate magnetic metallic materials with superior magnetic properties over a wide range of temperatures. 展开更多
关键词 magnetic metallic materials temperature dependent saturation magnetization MODELING
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Magnetohydrodynamic Conjugate Free Convective Heat Transfer Analysis of an Isothermal Horizontal Circular Cylinder with Temperature Dependent Viscosity
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作者 NHM. A. Azim 《Journal of Applied Mathematics and Physics》 2024年第10期3384-3401,共18页
Heat transfers due to MHD-conjugate free convection from the isothermal horizontal circular cylinder while viscosity is a function of temperature is investigated. The governing equations of the flow and connected boun... Heat transfers due to MHD-conjugate free convection from the isothermal horizontal circular cylinder while viscosity is a function of temperature is investigated. The governing equations of the flow and connected boundary conditions are made dimensionless using a set of non-dimensional parameters. The governing equations are solved numerically using the finite difference method. Numerical results are obtained for various values of viscosity variation parameter, Prandtl number, magnetic parameter, and conjugate conduction parameter for the velocity and the temperature within the boundary layer as well as the skin friction coefficients and heat transfer rate along the surface. 展开更多
关键词 Conjugate Free Convection Horizontal Circular Cylinder Implicit Finite Difference Method MHD temperature Dependent Viscosity
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Molecular dynamics study on temperature and strain rate dependences of mechanical tensile properties of ultrathin nickel nanowires 被引量:3
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作者 王卫东 易成龙 樊康旗 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2013年第11期3353-3361,共9页
Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the (100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperature... Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the (100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed. 展开更多
关键词 ultrathin nickel nanowires temperature dependence strain rate dependence tensile properties molecular dynamics simulation
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Uniaxial compressive behavior of equal channel angular pressing Al at wide temperature and strain rate range 被引量:1
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作者 汤忠斌 索涛 +3 位作者 张部声 李玉龙 赵峰 范学领 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2014年第8期2447-2452,共6页
Uniaxial compressive experiments of ultrafine-grained Al fabricated by equal channel angular pressing(ECAP) method were performed at wide temperature and strain rate range. The influence of temperature on flow stress,... Uniaxial compressive experiments of ultrafine-grained Al fabricated by equal channel angular pressing(ECAP) method were performed at wide temperature and strain rate range. The influence of temperature on flow stress, strain hardening rate and strain rate sensitivity was investigated experimentally. The results show that both the effect of temperature on flow stress and its strain rate sensitivity of ECAPed Al is much larger than those of the coarse-grained Al. The temperature sensitivity of ultrafine-grained Al is comparatively weaker than that of the coarse-grained Al. Based on the experimental results, the apparent activation volume was estimated at different temperatures and strain rates. The forest dislocation interactions is the dominant thermally activated mechanism for ECAPed Al compressed at quasi-static strain rates, while the viscous drag plays an important role at high strain rates. 展开更多
关键词 ultrafine-grained materials equal channel angular pressing AL mechanical behavior strain rate sensitivity temperature dependence activation volume
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Temperature Dependence of the Energy-Band Structure for the Holstein Molecular-Crystal Model
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作者 李德俊 彭金璋 +1 位作者 米贤武 唐翌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期845-850,共6页
We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interac... We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interaction between an electron and thermal phonons and to thermal expansion. For a one-dimensional Li atom lattice chain, under the chosen parameters,the width of the ls and 2s energy bands narrows as the temperature increases and the energy-gap width between the two bands widens. These results agree qualitatively with those observed experimentally. Studying temperature dependence of the energy-band structure is of great importance for understanding optical and transporting characteristics of a solid. 展开更多
关键词 temperature dependence energy-band structure thermal phonon thermal expansion
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Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices
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作者 何进 张兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第10期1235-1239,共5页
The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica... The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics. 展开更多
关键词 wide band gap semiconductor devices 6H SiC impact ionization coefficient avalanche breakdown on resistance temperature dependence of performance
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High temperature mechanical behavior of low-pressure sand-cast Mg-Gd-Y-Zr magnesium alloy 被引量:13
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作者 Wencai Liu Beiping Zhou +3 位作者 Guohua Wu Liang Zhang Xiang Peng Liang Cao 《Journal of Magnesium and Alloys》 SCIE 2019年第4期597-604,共8页
The aim of this work is firstly to optimize T6 heat-treatment of low-pressure sand-cast Mg-10Gd-3Y-0.5Zr alloy,and then systematically investigate the mechanical behavior of the T6-treated alloy from room temperature ... The aim of this work is firstly to optimize T6 heat-treatment of low-pressure sand-cast Mg-10Gd-3Y-0.5Zr alloy,and then systematically investigate the mechanical behavior of the T6-treated alloy from room temperature to 300℃.It turned out that the optimum T6 heat-treatments for the tested alloy are 525℃×12 h+225℃×14 h and 525℃×12 h+250℃×12 h which integrated age-hardening and tensile properties into account,respectively.The strength of the T6-treated alloy indicates obvious anomalous temperature dependence from room temperature to 300℃,namely both ultimate tensile strength and yield strength of the tested alloy firstly increase with tensile temperature,and then decrease as temperature increases further.Elongation increased with temperature monotonously.The tensile fracture mode of the tested alloy changes from transgranular fracture to intergranular fracture with the increasing of test temperature. 展开更多
关键词 MG-GD-Y-ZR Heat treatment High temperature tensile property Anomalous temperature dependence
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Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode 被引量:5
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作者 贾云鹏 赵豹 +4 位作者 杨霏 吴郁 周璇 李哲 谭健 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第12期431-434,共4页
The temperature dependences of forward voltage drop(VF) of the fast recovery diodes(FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study a... The temperature dependences of forward voltage drop(VF) of the fast recovery diodes(FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones.Based on deep level transient spectroscopy(DLTS) measurements, a new level E6(EC-0.376 e V) is found in the combined lifetime treated(CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VFresults of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD. 展开更多
关键词 LIFETIME temperature dependence PLATINUM ELECTRON
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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model 被引量:4
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作者 孙亚宾 付军 +3 位作者 王玉东 周卫 张伟 刘志弘 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第4期444-449,共6页
In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, the... In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range (from 218 K to 473 K), and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range. 展开更多
关键词 temperature dependence model parameter SiGe HBT HICUM
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Different temperature dependence of carrier transport properties between Al_xGa_(1-x)N/In_yGa_(1-y)N/GaN and Al_xGa_(1-x)N/GaN heterostructures 被引量:3
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作者 宋杰 许福军 +4 位作者 黄呈橙 林芳 王新强 杨志坚 沈波 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第5期374-378,共5页
The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN he... The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures. 展开更多
关键词 temperature dependence Hall mobility parallel conductivity
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Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes 被引量:3
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作者 陈丰平 张玉明 +3 位作者 张义门 汤晓燕 王悦湖 陈文豪 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第3期400-404,共5页
The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value ... The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented. 展开更多
关键词 4H SiC junction barrier Schottky diode temperature dependence electrical characteristics
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Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain 被引量:3
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作者 Chen Shu-Ming Chen Jian-Jun 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第1期340-345,共6页
A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional nu... A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments. 展开更多
关键词 temperature dependence single event transient parasitic bipolar amplification effect charge sharing collection
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Parasitic bipolar amplification in a single event transient and its temperature dependence 被引量:2
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作者 刘征 陈书明 +2 位作者 陈建军 秦军瑞 刘蓉容 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期607-612,共6页
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studi... Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor. 展开更多
关键词 single event transient parasitic bipolar amplification funnel-aided drift temperature dependence
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Generalized thermoelasticity of the thermal shock problem in an isotropic hollow cylinder and temperature dependent elastic moduli 被引量:2
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作者 Ibrahim A.Abbas Mohamed I.A.Othman 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第1期289-294,共6页
In this paper, we construct the equations of generalized thermoelasicity for a non-homogeneous isotropic hollow cylider with a variable modulus of elasticity and thermal conductivity based on the Lord and Shulman theo... In this paper, we construct the equations of generalized thermoelasicity for a non-homogeneous isotropic hollow cylider with a variable modulus of elasticity and thermal conductivity based on the Lord and Shulman theory. The problem has been solved numerically using the finite element method. Numerical results for the displacement, the temperature, the radial stress, and the hoop stress distributions are illustrated graphically. Comparisons are made between the results predicted by the coupled theory and by the theory of generalized thermoelasticity with one relaxation time in the cases of temperature dependent and independent modulus of elasticity. 展开更多
关键词 generalized thermoelsticity thermal shock temperature dependent elastic moduli finiteelement method
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Temperature and drain bias dependence of single event transient in 25-nm FinFET technology 被引量:2
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作者 秦军瑞 陈书明 +2 位作者 李达维 梁斌 刘必慰 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期590-594,共5页
In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltag... In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed. 展开更多
关键词 fin field-effect transistor single event transient temperature dependence drain bias dependence
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Study of Imidazolium Ionic Liquids:Temperature-dependent Fluorescence and Molecular Dynamics Simulation 被引量:1
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作者 FU Hai-ying ZHU Guang-lai +2 位作者 WU Guo-zhong SHA Mao-lin DOU Qiang 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2011年第4期688-692,共5页
The steady-state fluorescence spectra and molecular dynamics simulations were explored to investigate the temperature dependent organization in some imidazolium ionic liquids:1-butyl-3-methylimidazolium hexafluo-roph... The steady-state fluorescence spectra and molecular dynamics simulations were explored to investigate the temperature dependent organization in some imidazolium ionic liquids:1-butyl-3-methylimidazolium hexafluo-rophosphate([bmim][PF6]),1-ethyl-3-methylimidazolium ethylsulfate([emim][EtSO4]) and 1-butyl-3-methylimida-zolium tetrafluoroborate([bmim][BF4]).The pure room temperature ionic liquids(ILs) exhibit a large red shift at more than an excitation wavelength of around 340 nm,which demonstrates the heterogeneous nature of the liquids.Furthermore,the fluorescence spectra of the ionic liquids were found to be temperature-dependent.The emission intensity gradually decreased with increasing temperature for the neat ionic liquids and the mixed solutions of [bmim][BF4]-H2O,which was the special phenomena induced by not only the local structure but also the viscosity.The molecular dynamics simulation further confirms that the structures of ionic liquids are sensitive to the surroun-ding environment because of the aggregation degree of ILs. 展开更多
关键词 temperature dependence FLUORESCENCE Ionic liquid Molecular dynamics simulation
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Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions 被引量:1
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作者 王洪朝 何依婷 +5 位作者 孙华阳 丘志仁 谢灯 梅霆 Tin C. C 冯哲川 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第4期134-138,共5页
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth condi... The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 (TO), E1 (TO) and A1 (LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 (TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 (TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 (LOPC) mode in 4H-SiC. 展开更多
关键词 RA SIC temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions
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Concentration and Temperature Dependence of Electrical Conductivity in Thermally Stable Chromium Polyacrylate 被引量:2
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作者 S. U.Rehman M.Siddique and Farid A.Khwaja(Materials Research Laboratory, Dept. of Physics, Quaid-i-Azam University, Islamabad, Pakistan)M.S.Zafar(Dept. of Physics, University of the Punjab, Lahore, Pakistan) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1995年第6期443-446,共4页
Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows depende... Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows dependence on temperature, as well as, level of doping. The conductivity is considered to be due to thermal hopping motion of localized charge carriers,which are believed to be polarons, in the temperature range 303 K to 323 K and for T>343 K,whereas. it is metal-like in the temperature range 323 K to 343 K 展开更多
关键词 Concentration and temperature Dependence of Electrical Conductivity in Thermally Stable Chromium Polyacrylate
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Annealing Temperature dependence of Photoluminescence from Silicon-rich silica Films 被引量:1
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作者 吴雪梅 诸葛兰剑 +3 位作者 汤乃云 叶春暖 宁兆元 姚伟国 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第4期891-895,共5页
The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photol... The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4- luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at room temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed. 展开更多
关键词 Annealing temperature dependence of Photoluminescence from Silicon-rich silica Films SIO
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