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Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature
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作者 姚建可 钟文森 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第1期559-562,共4页
For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular be... For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process. 展开更多
关键词 BaSnO_(3)and In_2O_(3)mixed film filtered cathodic vacuum arc deposition transparent conductive films microstructure optical properties electrical properties
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Preparation and characterization of ZnO/Cu/ZnO transparent conductive films 被引量:1
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作者 Wen-Ying Li Lai-Xin Jiang +3 位作者 Gui-Lin Yin Yuan-Yuan Wang Zhen Yu Dan-Nong He 《Rare Metals》 SCIE EI CAS CSCD 2013年第3期273-277,共5页
ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The mor- ph... ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.(V.s)-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films. 展开更多
关键词 ZNO CU transparent conductive films Magnetic sputtering
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Characteristics Improvement of PEDOT:PSS Transparent Conductive Film Prepared by Ink-Jet Printing 被引量:2
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作者 Atsushi Nitta Kazuya Kawahara Kohei Miyata 《Advances in Materials Physics and Chemistry》 2016年第8期239-247,共9页
Recently, a high-performance and low-priced transparent conductive film has been expected to be developed because flexible devices produced using organic materials have been actively studied. An indium tin oxide (ITO)... Recently, a high-performance and low-priced transparent conductive film has been expected to be developed because flexible devices produced using organic materials have been actively studied. An indium tin oxide (ITO) thin film, which has been generally used as a material for a transparent conductive film, has problems, such as fragility to bending stress and depletion of the resource. The present study used poly(3, 4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS), an organic electroconductive material, and examined the improvement in the resistance value and visible light transmittance of a transparent conductive film produced using the ink-jet method. In previous studies, we reported that, to improve the resistance value and visible light transmittance of a thin film, it was effective to clean the film substrate with ultraviolet/ozone (UV/O<sub>3</sub>) treatment, anneal the film after it was deposited on the substance, and dip the annealed film into a polar solvent. Focusing on the thin film processing between printing operations, the present study improved resistance value and visible light transmittance by examining both the application methods of a polar solvent and the annealing time between printing operations. As a result, the resistance value and visible light transmittance of a PEDOT:PSS thin film were 390.4 Ω and 86.6%, respectively. This film was obtained by applying a polar solvent and performing annealing for 30 min between printing operations. The printing was performed three times. 展开更多
关键词 PEDOT:PSS Ink-Jet Printing transparent conductive film Flexible Devices
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Flexible, Transparent and Conductive Metal Mesh Films with Ultra‑High FoM for Stretchable Heating and Electromagnetic Interference Shielding 被引量:1
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作者 Zibo Chen Shaodian Yang +9 位作者 Junhua Huang Yifan Gu Weibo Huang Shaoyong Liu Zhiqiang Lin Zhiping Zeng Yougen Hu Zimin Chen Boru Yang Xuchun Gui 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第5期201-213,共13页
Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittan... Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications. 展开更多
关键词 Metal mesh transparent conductive film Stretchable heater Electromagnetic interference shielding
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Fluorine,chlorine,and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method
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作者 Liwei Che Jianmin Song +5 位作者 Jinzheng Yang Xiaoyang Chen Junjie Li Nan Zhang Shaopeng Yang Yanfeng Wang 《Journal of Materiomics》 SCIE CSCD 2023年第4期745-753,共9页
Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal an... Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing.The effects of F-doping content on the structural,morphological,electrical,and optical properties of FCGZO films were examined by XRD,TEM,FE-SEM,PL spectroscopy,XPS,Hall effects testing,and UVeviseNIR spectroscopy.All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate.Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film.At a doping ratio of 2%(in mole),the F,Cl,and Ga co-doped ZnO film exhibited the best photoelectric performance,with a carrier concentration of 2.62×10^(20)cm^(-3),mobility of 14.56 cm^(2)/(V·s),and resistivity of 1.64×10^(-3)Ucm.The average transmittance(AT)in the 380-1600 nm region nearly 90%with air as the reference,and the optical band gap was 3.52 eV. 展开更多
关键词 ZnO transparent conductive films Sol-gel spin coating Electrical property Optical property
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Flexible Transparent Conductive Films on the Basis of Ag Nanowires:Design and Applications:A Review 被引量:15
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作者 Weiwei He Changhui Ye 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第6期581-588,共8页
Transparent conductive films are used ubiquitously in optoelectronic devices.The properties of transparent films are extremely important for device performance,and the specifications vary according to types of devices... Transparent conductive films are used ubiquitously in optoelectronic devices.The properties of transparent films are extremely important for device performance,and the specifications vary according to types of devices.Over the past few years,various types of transparent conductive films on the basis of nanomaterials have emerged,and among these materials,silver nanowire networks show promising performance and represent a viable alternative to the commonly used,scarce and brittle indium tin oxide.In this paper,the working principle and the design protocol of Ag nanowire network flexible transparent conductive films are reviewed,and the applications of Ag nanowircs transparent conductive film are also briefly introduced.Concluding remarks are provided to propose future research in this field towards real-world applications. 展开更多
关键词 Ag nanowires transparent conductive films Touch pa
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High-performance single-wall carbon nanotube transparent conductive films 被引量:4
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作者 Song Jiang Peng-Xiang Hou +1 位作者 Chang Liua Hui-Ming Cheng 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2019年第11期2447-2462,共16页
A single-wall carbon nanotube(SWCNT)has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive f... A single-wall carbon nanotube(SWCNT)has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive films(TCFs).However,the optoelectronic performance of these films needs to be improved to meet the requirements of many devices.The electrical resistivity of SWCNTTCFs is mainly determined by the intrinsic resistivity of individual SWCNTs and their junction resistance in networks.We analyze these key factors and focus on the optimization of SWCNTs and their networks,which include the diameter,length,crystallinity and electrical type of the SWCNTs,and the bundle size and interconnects in networks,as well as chemical doping and microgrid design.We conclude that isolated/small-bundle,heavily doped metallic or semiconducting SWCNTs with a large diameter,long length and high crystallinity are necessary to fabricate high-performance SWCNTTCFs.A simple,controllable way to construct macroscopic SWCNT networks with Y-type connections,welded junctions or microgrid design is important in achieving a low resistivity.Finally,some insights into the key challenges in the manufacture and use of SWCNT TCFs and their prospects are presented,hoping to shed light on promoting the practical application of SWCNT TCFs in future flexible and stretchable optoelectronics. 展开更多
关键词 Single-wall carbon nanotube transparent conductive film Junction resistance BUNDLE DOPING
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The effect of grid shape on the properties of transparent conductive films based on flexographic printing 被引量:2
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作者 LIU Wei FANG Yi +2 位作者 XU Yan Fang LI Xiu LI Lu Hai 《Science China(Technological Sciences)》 SCIE EI CAS 2014年第12期2536-2541,共6页
The effect of grid shape on the properties of transparent conductive films(TCFs) is theoretically analyzed and experimentally verified. The light transmittance by three types of grid shapes: triangle, square and hexag... The effect of grid shape on the properties of transparent conductive films(TCFs) is theoretically analyzed and experimentally verified. The light transmittance by three types of grid shapes: triangle, square and hexagon have been theoretically calculated and simulated. It was found that hexagonal grid unit has the highest light transmittance limit under the practical lattice parameters and its decrease in light transmittance caused by the increase of line width in printing process is the least. The grid of three different shapes with same theoretical transmittance is fabricated through flexographic printing. The result shows that the actual light transmittance of the printed TCFs is lower than its theoretical value because of the inevitable width increase of printed grid lines, with slight difference between the three shapes. However, it is greatly different in terms of conductivity, leading to variation in the quality factor Q(defined as the ratio of light transmittance to total resistance) which represents the performance of TCFs. The Q of hexagonal grid(6.04) is the highest, which is 21% higher than that of the square grid. 展开更多
关键词 metal grid transparent conductive films flexographic printing grid shape quality factor Q
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Fabrication of Flexible Transparent Conductive Films with Silver Nanowire by Vacuum Filtration and PET Mold Transfer 被引量:9
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作者 Wei Xu Qingsong xu +3 位作者 Qijin Huang Ruiqin Tan Wenfeng Shen Weijie Song 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2016年第2期158-161,共4页
The flexible transparent conductive films (FrCFs) of silver nanowire-polyethylene terephthalate (AgNW- PET) were prepared by a facile method including vacuum filtration and mold transferring. The effect of silver ... The flexible transparent conductive films (FrCFs) of silver nanowire-polyethylene terephthalate (AgNW- PET) were prepared by a facile method including vacuum filtration and mold transferring. The effect of silver nanowire weight density on the optical and electrical properties of films, as well as the electrical percolation was investigated. The obtained typical AgNW-PET film exhibited high figure of merit of 31.3 × 10^-3 Ω^-1 with low sheet resistance of 4.95 D sq^-1 and high transparency at 550 nm of 83.0% (excluding PET substrate). The resulting FTCFs based on PET substrate with high transmittance and low sheet resistance have a great potential in the application of high-performance flexible electronics and photovoltaic devices. 展开更多
关键词 Silver nanowires Nanoparticles Percolation threshold transparent conductive film
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High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method 被引量:1
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作者 Hua Yu Andrew J.Stapleton +1 位作者 David A.Lewis Lianzhou Wang 《Journal of Materiomics》 SCIE EI 2017年第1期77-82,共6页
Flexible MoO_(3)/silver nanowire(AgNW)/MoO_(3)/TiO_(2)/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conduct... Flexible MoO_(3)/silver nanowire(AgNW)/MoO_(3)/TiO_(2)/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications.Silver nanoparticle-based electrodes were also prepared for comparison.Using a simple spin-coating and lamination-assisted planarization method,a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140℃.The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82%at 550 nm and lower sheet resistance about 12-15Ωsq^(-1),in comparison with the values of 68%and 22-25Ωsq^(-1) separately for AgNP based electrodes.Scanning electron microscopy(SEM)and Atomic force microscopy(AFM)reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness(<15 nm).The AgNW/MoO_(3) composite network could enhance the charge transport and collection efficiency by broadening the lateral conduction range due to the built of an efficient charge transport network with long-sized nanowire.In consideration of the manufacturing cost,the laminationassisted solution-processed method is cost-effective and scalable,which is desire for large-area fabrication.While in view of the materials cost and comparable performance,this AgNW-based transparent and conductive electrodes is potential as an alternative to ITO for various optoelectronic applications. 展开更多
关键词 Silver nanowires transparent conductive film MoO_(3) Solution processed LAMINATION
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Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films 被引量:2
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作者 王文文 王天民 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2007年第5期464-468,共5页
Transparent conductive oxide (TCO) thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen (AO) resisting systems in spacecrafts. Of TCO, ZnO:Al (ZAO) and In... Transparent conductive oxide (TCO) thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen (AO) resisting systems in spacecrafts. Of TCO, ZnO:Al (ZAO) and In2O3:Sn (ITO) thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%. 展开更多
关键词 transparent conductive oxide thin film ZnO:Al In2O3:Sn atomic oxygen EROSION electrical properties
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Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets 被引量:3
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作者 LIN Wei MA Ruixin SHAO Wei KANG Bo WU Zhongliang 《Rare Metals》 SCIE EI CAS CSCD 2008年第1期32-35,共4页
To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabr... To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained. 展开更多
关键词 ZNO transparent conductive thin film RF magnetron sputtering optical properties electrical properties
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A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film 被引量:2
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作者 范天举 苑春秋 +5 位作者 唐伟 童宋照 刘屹东 黄维 闵永刚 Arthur J.Epstein 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第7期124-128,共5页
We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer... We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476Ω/sq and transmittance of 76% at 550nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. 展开更多
关键词 A Novel Method of Fabricating Flexible transparent conductive Large Area Graphene film GO FLEXIBLE PET
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Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films 被引量:4
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作者 Bin WU Changyong CHEN and Shibin ZHANG(Physics Dept., Lanzhou University, Lanzhou 730000, China)Wanlu WANG and Kejun LIAO(Applied Physics Dept., Chongqing University, Chongqing 400044, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1998年第2期161-166,共6页
Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the opt... Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated 展开更多
关键词 Thin Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the transparent conductive CdIn2O4 Thin films
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Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering 被引量:1
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作者 赵江 赵修建 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2011年第3期388-392,共5页
High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe... High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC. 展开更多
关键词 radio-frequency (RF) magnetron sputtering transparent conducting film zinc doped tin oxide (ZTO) substrate temperature
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Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering
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作者 刘洋 彭茜 +1 位作者 周仲品 杨光 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期113-117,共5页
Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are cr... Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region(400-800 nm) of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1. 展开更多
关键词 TA Effects of Substrate Temperature on Properties of transparent conductive Ta-Doped TiO2 films Deposited by Radio-Frequency Magnetron Sputtering TIO
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Fabrication of High-Haze Flexible Transparent Conductive PMMA Films Embedded with Silver Nanowires
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作者 钟露 许炜 +3 位作者 姚美意 沈文锋 徐峰 宋伟杰 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第11期94-97,共4页
High-haze flexible transparent conductive polymethyl methacrylate (PMMA) films embedded with silver nanowires (AgNWs) are fabricated by a low-cost and simple process. The volatilization rate of the solvent in PMMA... High-haze flexible transparent conductive polymethyl methacrylate (PMMA) films embedded with silver nanowires (AgNWs) are fabricated by a low-cost and simple process. The volatilization rate of the solvent in PMMA solution affects the surface microstructures and morphologies, which results in different haze factors of the composite films. The areal mass density of AgNW shows a significant influence on the optical and electrical properties of composite films. The AgNW/PMMA transparent conductive films with the sheet resistance of 5.5Ω sq ^-1 exhibit an excellent performance with a high haze factor of 81.0% at 550?nm. 展开更多
关键词 Fabrication of High-Haze Flexible transparent conductive PMMA films Embedded with Silver Nanowires
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Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering 被引量:17
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作者 吕茂水 庞智勇 +2 位作者 修显武 戴瑛 韩圣浩 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第2期548-552,共5页
Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) msgnetron sputtering at room temperature, The... Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers. 展开更多
关键词 SPUTTERING ZIRCONIUM zinc oxide transparent conducting films
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Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD 被引量:1
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作者 Deheng ZHANG(Dept. of Physics, Shandong University, Jinan 250100, China)Honglei MA(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1997年第1期50-56,共7页
Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2... Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16~400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 :F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films. 展开更多
关键词 SNO cm Conduction Properties and Scattering Mechanisms in F-doped Textured transparent Conducting SnO2 films Deposited by APCVD
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THE BAND STRUCTURE AND WORK FUNCTION OF TRANSPARENT CONDUCTING ALUMINUM AND MANGANESE CO-DOPED ZINC OXIDE FILMS
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作者 H.T.Cao Z.L.Pei +3 位作者 X.B.Zhang J.Gong C.Sun L.S.Wen 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2005年第3期356-362,共7页
Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reacti ve magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films... Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reacti ve magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films have been investigated using optical spectroscopy, band structure analyses and ultraviolet photoelectro n spectroscopy (UPS). ZnO films have direct allowed transition band structure, w hich has been confirmed by the character of the optical absorption coefficient. The apparent band gap has been found directly proportional to N2/3, showing that the effect of Burstein-Moss shift on the band gap variations dominates over the many-body effect. With only standard cleaning protocols, the work function of ZnO: (Al, Mn) and ZnO: Al films have been measured to be 4.26 and 4.21eV, respec tively. The incorporation of Mn element into the matrix of ZnO, as a relatively deep donor, can remove some electrons from the conduction band and deplete the d ensity of occupied states at the Fermi energy, which causes a loss in measured p hotoemission intensity and an increase in the surface work function. Based on th e band gap and work function results, the energy band diagram of the ZnO: (Al, M n) film near its surface is also given. 展开更多
关键词 transparent conducting oxide film band gap UPS work function
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