Design method of split planar resonant inductor in 1 kV SiC logical link control(LLC)converter is proposed,which ensures the converter power density of 93.59 W/in^3 and peak efficiency of 95.73%.Split resonant inducto...Design method of split planar resonant inductor in 1 kV SiC logical link control(LLC)converter is proposed,which ensures the converter power density of 93.59 W/in^3 and peak efficiency of 95.73%.Split resonant inductor helps to provide symmetrical resonant current by symmetrical impedance,and improves the distortion of resonant current,which ensures the efficiency of the whole converter.An interleaved winding connecting scheme improves the power density of the planar magnets,which contributes to power density improvement.Design method and calculation process of such split planar resonant inductor are provided.To verify the feasibility of the proposed design method,a 1 kV/48 V 6.6 kW,210 k Hz SiC LLC prototype was built,and the experimental results are given.展开更多
The Vienna rectifier with unbalanced input voltage and load transient is analyzed.A nonlinear control strategy for Vienna rectifier under unbalanced input is proposed.From the view of positive and negative sequence co...The Vienna rectifier with unbalanced input voltage and load transient is analyzed.A nonlinear control strategy for Vienna rectifier under unbalanced input is proposed.From the view of positive and negative sequence components,the proposed nonlinear control strategy suppresses the twice frequency ripple and guarantees the dynamic response characteristic at the same time.Thanks to the proposed nonlinear control strategy,the DC bus capacitor can be reduced a lot since the voltage ripple and drop can be suppressed.A 10 kW Vienna rectifier is built to verify the proposed control strategy.After applying the proposed nonlinear control strategy,the voltage ripple is only7 V and decreases over 75%over the traditional PI control when the unbalanced degree is 20%.The voltage drop can be reduced about 80%than former control strategy which is helpful to reduce the DC bus capacitor and achieve higher power density.The volume of the capacitor can be reduced by 83.3%with the new control method.展开更多
This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple...This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.展开更多
Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high r...Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high reliability in several kHz,1 kV input,and several kW output applications.However,the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage,high-frequency,medium-high-power DC conversion applications have not yet been investigated thoroughly.Two 1 kV,3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters,power density,zero voltage switch realization,and overall efficiency.This provides guidance for the appropriate evaluation of WBG devices in high-voltage,high-frequency,and medium-high-power applications.展开更多
基金supported by the National Key Research and Development Program of China (2018YFB0904101)Science and Technology Project of State Grid (SG SGHB0000KXJS1800685)
文摘Design method of split planar resonant inductor in 1 kV SiC logical link control(LLC)converter is proposed,which ensures the converter power density of 93.59 W/in^3 and peak efficiency of 95.73%.Split resonant inductor helps to provide symmetrical resonant current by symmetrical impedance,and improves the distortion of resonant current,which ensures the efficiency of the whole converter.An interleaved winding connecting scheme improves the power density of the planar magnets,which contributes to power density improvement.Design method and calculation process of such split planar resonant inductor are provided.To verify the feasibility of the proposed design method,a 1 kV/48 V 6.6 kW,210 k Hz SiC LLC prototype was built,and the experimental results are given.
基金supported in part by the National Natural Science Foundation of China (Nos. 51777093 ,51722702)
文摘The Vienna rectifier with unbalanced input voltage and load transient is analyzed.A nonlinear control strategy for Vienna rectifier under unbalanced input is proposed.From the view of positive and negative sequence components,the proposed nonlinear control strategy suppresses the twice frequency ripple and guarantees the dynamic response characteristic at the same time.Thanks to the proposed nonlinear control strategy,the DC bus capacitor can be reduced a lot since the voltage ripple and drop can be suppressed.A 10 kW Vienna rectifier is built to verify the proposed control strategy.After applying the proposed nonlinear control strategy,the voltage ripple is only7 V and decreases over 75%over the traditional PI control when the unbalanced degree is 20%.The voltage drop can be reduced about 80%than former control strategy which is helpful to reduce the DC bus capacitor and achieve higher power density.The volume of the capacitor can be reduced by 83.3%with the new control method.
基金supported in part by the National Natural Science Foundation of China (No.51777093)
文摘This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.
基金Supported by Industrial Prospective and Key Core Technology Funding of Jiangsu Province(BE2019113).
文摘Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high reliability in several kHz,1 kV input,and several kW output applications.However,the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage,high-frequency,medium-high-power DC conversion applications have not yet been investigated thoroughly.Two 1 kV,3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters,power density,zero voltage switch realization,and overall efficiency.This provides guidance for the appropriate evaluation of WBG devices in high-voltage,high-frequency,and medium-high-power applications.
