Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,f...We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.展开更多
The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried cres...The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 nm.The devices operate in superluminescent state in the range from 0℃ to 60℃.展开更多
文摘Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
文摘We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.
文摘The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 nm.The devices operate in superluminescent state in the range from 0℃ to 60℃.
