High-temperature corrosion of sintered RE_(2)Si_(2)O_(7)(RE=Yb and Ho)environmental barrier coating materials by volcanic ash

Rare-earth silicates are promising environmental barrier coatings(EBCs)that can protect SiC_(f)/Si C_(m)substrates in next-genera tion gas turbine blades.Notably,RE_(2)Si_(2)O_(7)(RE=Yb and Ho)shows potential as an EBC due to its coefficient of thermal expansion(CTE)compatible with substrates and high resistance to water vapor corrosion.The target operating temperature for next-generation tur bine blades is 1400°C.Corrosion is inevitable during adhesion to molten volcanic ash,and thus,understanding the corrosion behavior o the material is crucial to its reliability.This study investigates the high-temperature corrosion behavior of sintered RE_(2)Si_(2)O_(7)(RE=Yb and Ho).Samples were prepared using a solid-state reaction and hot-press method.They were then exposed to volcanic ash at 1400°C for 224,and 48 h.After 48 h of exposure,volcanic ash did not react with Yb_(2)Si_(2)O_(7)but penetrated its interior,causing damage.Meanwhile Ho_(2)Si_(2)O_(7)was partially dissolved in the molten volcanic ash,forming a reaction zone that prevented volcanic ash melts from penetrating the interior.With increasing heat treatment time,the reaction zone expanded,and the thickness of the acicular apatite grains increased The Ca:Si ratios in the residual volcanic ash were mostly unchanged for Yb_(2)Si_(2)O_(7)but decreased considerably over time for Ho_(2)Si_(2)O_(7).Th Ca in volcanic ash was consumed and formed apatite,indicating that RE^(3+)ions with large ionic radii(Ho>Yb)easily precipitated apatit from the volcanic ash.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Review of solid-state linear transformer driver technology

This paper is a review of recent developments in solid-state linear transformer driver(SSLTD)for applications to pulsed power generation.It summarizes the technological advances reported by previous publications and interprets the experimental progresses.The application of solid-state LTDs has been proved to be an attractive approach to make compact and repetitive pulsed power generators that have been sought by a variety of industrial applications and scientific researches.Their advantages and disadvantages compared with their alternatives are reported and analyzed in this paper.Future technical trends of solid-state LTDs are also discussed.

Measurement of metal vapor cooling speed during nanoparticle formation by pulsed wire discharge

Pulsed wire discharge(PWD) is one of nano-sized powder production methods. The object of this work is to study influence of the plasma/vapor/particle density using computer simulation and to establish temperature measurement method using a high-speed infrared thermometer in the PWD process. The temperature correction coefficient was obtained from geometric computer simulation results. Obtained correction coefficient was applied to the temperature measuring results. It was found from this result that obtained correction coefficient was appropriate. A temperature measurement method was established by using the high-speed infrared thermometer in PWD.

Microstructural evolution and mechanism of grain growth in magnesia ceramics prepared by high pressure and temperature with ultra-high heating rate

The fast densification method of combustion reaction plus quick pressing was adopted to prepare nanocrystalline ceramics.The densification process of magnesia compact with a particle size of 100 nm was investigated,under the applied pressure of up to 170 MPa,and the temperature range of 1740–2080 K with ultra-high heating rate(above 1700 K/min).High-purity magnesia ceramics with a relative density of 98.8%and an average grain size of 120 nm was obtained at 1740 K,and the grain growth during the densification process was effectively restrained.The characteristic morphology of evaporation-condensation was observed in the compact prepared at 2080 K,which revealed the actual process of mass transfer by gas diffusion.Moreover,the investigation on the microstructure evolution and mechanism of grain growth was carried out,on the basis of as-preserved nanocrystalline ceramics.The result indicated that the grain growth of the nanocrystalline MgO was controlled by the mechanism of evaporation-condensation rather than surface diffusion.Furthermore,the pressure had an influence of restraining the grain growth based on solid diffusion and strengthening the effect of gas diffusion with the increasing temperature.Under the particular conditions,there existed an appropriate temperature for the densification of nanocrystalline magnesia,while the excessive temperature would exaggerate grain growth and impede densification.