La^(3+) -doped SrBi_2Ta_2O_9 thin films for FRAM synthesized by sol-gel method

This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.

On a Question of the Theory of Partially Composition Formations（Dedicated to Professor K.P. Shum on the occasion of his 70th birthday）

Let n 〉 0 and w be a non-empty set of primes. It is proved that the lattice of all τ-closed n-multiply ω-composition formations is inductive. It gives a positive answer to a question of Skiba asked in 2001 at the Gomel Algebraic Seminar.

THE DIFFERENTIAL SYSTEMS WITH THE SAME REFLECTING FUNCTION

Using reflecting function of Mironenko we construct some difFerential sy-stems which are equivalent to the given differential system.