A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ ar...A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ are investigated. With Si4＋ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3＋ ion. The thermal stability is greatly improved by adding Si4＋ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4＋ shows that the calculated nonradiative decay rate is affected by Si4＋ substitution. The results are explained by the configurational coordinate diagram.展开更多
Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction.The influence of Si4+ addition on the charge transfer state of Eu3+-O2- and photoluminescence(PL) properties of BaZr(BO3)2:Eu3+ ...Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction.The influence of Si4+ addition on the charge transfer state of Eu3+-O2- and photoluminescence(PL) properties of BaZr(BO3)2:Eu3+ are discussed.Room temperature PL spectra indicated that efficient emission is obtained by Si doping.Increased values for the peak-peak ratio(PPR) of BaZr(BO3)2:Eu3+ at higher Si doping concentrations implied that the Eu3+ ion is located in a more asymmetric environment in BaZr0.8Si0.2(BO3)2:Eu3+ than in the undoped samples.The Judd-Ofelt parameters Ωλ(λ=2,4) were calculated from the PL data,giving results that were consistent with those from the PPR.The maximum radiative quantum efficiency was achieved at a Si doping concentration of 20 mol%.展开更多
ZnO quantum dots (QDs)with the sizes of 3.0-5.6 nm are synthesized by solution-phase method at different temperatures. We find that temperature has great influence on the size of ZnO QDs. The growth process is the mos...ZnO quantum dots (QDs)with the sizes of 3.0-5.6 nm are synthesized by solution-phase method at different temperatures. We find that temperature has great influence on the size of ZnO QDs. The growth process is the most sensitive to temperature, and the process is well explained by Lifshitz–Slyozov–Wagner (LSW) model. By photoluminescence (PL) spectra of the quantum dots at different temperatures and reactive time, we come to a conclusion that ultraviolet emission is mainly due to surface defects, and the or...展开更多
基金supported by the National Basic Research Program of China (Grant No. 6139702)the National Natural Science Foundation of China (Grant Nos. 60877029,60977035 and 60907021)+1 种基金the Natural Science Foundation of the Tianjin Education Committee,China (Grant No. 20071207)the Natural Science Foundation of Tianjin,China (Grant Nos. 09JCYBJC01400and 07JCYBJC06400)
文摘A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ are investigated. With Si4＋ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3＋ ion. The thermal stability is greatly improved by adding Si4＋ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4＋ shows that the calculated nonradiative decay rate is affected by Si4＋ substitution. The results are explained by the configurational coordinate diagram.
基金supported by the National Basic Research Program of ChinaNational Natural Science Foundation of China (60877029, 60977035, 60907021)+1 种基金Natural Science Foundation of Tianjin Education Committee (20071207)Natural Science Foundation of Tianjin (09JCYBJC01400, 07JCYBJC06400)
文摘Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction.The influence of Si4+ addition on the charge transfer state of Eu3+-O2- and photoluminescence(PL) properties of BaZr(BO3)2:Eu3+ are discussed.Room temperature PL spectra indicated that efficient emission is obtained by Si doping.Increased values for the peak-peak ratio(PPR) of BaZr(BO3)2:Eu3+ at higher Si doping concentrations implied that the Eu3+ ion is located in a more asymmetric environment in BaZr0.8Si0.2(BO3)2:Eu3+ than in the undoped samples.The Judd-Ofelt parameters Ωλ(λ=2,4) were calculated from the PL data,giving results that were consistent with those from the PPR.The maximum radiative quantum efficiency was achieved at a Si doping concentration of 20 mol%.
基金supported in part by National Natural Science Foundation of China(Grant No.60877029)supported by the Tianjin Natural Science Foundation (Grant No.07JCYBJC0640006TXTJJC14600)supported by the Subject of Science and Technology Development Fund at University of Tianjin (Grant No.20071207)
文摘ZnO quantum dots (QDs)with the sizes of 3.0-5.6 nm are synthesized by solution-phase method at different temperatures. We find that temperature has great influence on the size of ZnO QDs. The growth process is the most sensitive to temperature, and the process is well explained by Lifshitz–Slyozov–Wagner (LSW) model. By photoluminescence (PL) spectra of the quantum dots at different temperatures and reactive time, we come to a conclusion that ultraviolet emission is mainly due to surface defects, and the or...
