Bose–Einstein distribution temperature features of quasiparticles around magnetopolaron in Gaussian quantum wells of alkali halogen ions

We have applied strong coupling unitary transformation method combined with Bose–Einstein statistical law to investigate magnetopolaron energy level temperature effects in halogen ion crystal quantum wells.The obtained results showed that under magnetic field effect,magnetopolaron quasiparticle was formed through the interaction of electrons and surrounding phonons.At the same time,magnetopolaron was influenced by phonon temperature statistical law and important energy level shifts down and binding energy increases.This revealed that lattice temperature and magnetic field could easily affect magnetopolaron and the above results could play key roles in exploring thermoelectric conversion and conductivity of crystal materials.

Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells

Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.

Prediction of impurity spectrum function by deep learning algorithm

By using the numerical renormalization group(NRG)method,we construct a large dataset with about one million spectral functions of the Anderson quantum impurity model.The dataset contains the density of states(DOS)of the host material,the strength of Coulomb interaction between on-site electrons(U),and the hybridization between the host material and the impurity site(Γ).The continued DOS and spectral functions are stored with Chebyshev coefficients and wavelet functions,respectively.From this dataset,we build seven different machine learning networks to predict the spectral function from the input data,DOS,U,andΓ.Three different evaluation indexes,mean absolute error(MAE),relative error(RE)and root mean square error(RMSE),are used to analyze the prediction abilities of different network models.Detailed analysis shows that,for the two kinds of widely used recurrent neural networks(RNNs),gate recurrent unit(GRU)has better performance than the long short term memory(LSTM)network.A combination of bidirectional GRU(BiGRU)and GRU has the best performance among GRU,BiGRU,LSTM,and BiLSTM.The MAE peak of BiGRU+GRU reaches 0.00037.We have also tested a one-dimensional convolutional neural network(1DCNN)with 20 hidden layers and a residual neural network(ResNet),we find that the 1DCNN has almost the same performance of the BiGRU+GRU network for the original dataset,while the robustness testing seems to be a little weak than BiGRU+GRU when we test all these models on two other independent datasets.The ResNet has the worst performance among all the seven network models.The datasets presented in this paper,including the large data set of the spectral function of Anderson quantum impurity model,are openly available at https://doi.org/10.57760/sciencedb.j00113.00192.

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Simulation of multilayer homoepitaxial growth on Cu （100） surface

The processes of multilayer thin Cu films grown on Cu （100） surfaces at elevated temperature （250-400K） are simulated by mean of kinetic Monte Carlo （KMC） method, where the realistic growth model and physical parameters are used. The effects of small island （dimer and trimer） diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlic-Schwoebel （ES） barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu（100） system and an ES barrier EB 〉 0.125eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.

Effects of Thermal Lattice Vibration on the Effective Potential of Weak-Coupling Bipolaron in a Quantum Dot

Based on the Huybrechts' linear-combination operator,effects of thermal lattice vibration on the effective potential of weak-coupling bipolaron in semiconductor quantum dots are studied by using the LLP variational method and quantum statistical theory.The results show that the absolute value of the induced potential of the bipolaron increases with increasing the electron-phonon coupling strength,but decreases with increasing the temperature and the distance of electrons,respectively;the absolute value of the effective potential increases with increasing the radius of the quantum dot,electron-phonon coupling strength and the distance of electrons,respectively,but decreases with increasing the temperature;the temperature and electron-phonon interaction have the important influence on the formation and state properties of the bipolaron:the bipolarons in the bound state are closer and more stable when the electron-phonon coupling strength is larger or the temperature is lower;the confinement potential and coulomb repulsive potential between electrons are unfavorable to the formation of bipolarons in the bound state.

A New Mechanism Responsible for the Enhancement of Local Electric Field on the Surface of Emitting Carbon Nanotubes

Aligned carbon nanotube (CNRT) films exhibit excellent electron emission properties at very low fields. This has been attributed to the high aspect ratio of CNTs, I.e. Their emitting surface can have high local field due to geometrical enhancement. It is found that a new mechanism can be responsible for the enhancement of the local field on the emitting surface of CNTs. This results from the space charge in the vacuum gap, which is readily generated due to the high emission current density of CNTs. Details are given of both experimental and theoretical studies of this effect. The mechanism also accounts for the distinct nonlinearity in Fowler-Nordheim plots often observed with CNTs. The implication of the technical application of our findings is also included.

Paraelectric-ferroelectric interface dynamics induced by latent heat transfer and irreversibility of ferroelectric phase transitions

The temperature gradients that arise in the paraelectric-ferroelectric interface dynamics induced by the latent heat transfer are studied from the point of view that a ferroelectric phase transition is a stationary, thermal-electric coupled transport process. The local entropy production is derived for a ferroelectric phase transition system from the Gibbs equation. Three types of regions in the system are described well by using the Onsager relations and the principle of minimum entropy production. The theoretical results coincides with the experimental ones.

The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well with asymmetrical Gaussian confinement potential

The vibrational frequency(VF), the ground state(GS) energy and the GS binding energy of the weak electron-phonon coupling polaron in a quantum well(QW) with asymmetrical Gaussian confinement potential are calculated. First we introduce the linear combination operator to express the momentum and coordinates in the Hamilton and then operate the system Hamilton using unitary transformation. The results indicate the relations of the quantities(the VF, the absolute value of GS energy and the GS binding energy) and the parameters(the QW barrier height and the range of Gaussian confinement potential in the growth direction of the QW).

Influence of Rashba SOI and Polaronic Effects on the Ground-State Energy of Electrons in Semiconductor Quantum Rings

The influence of Rashba spin-orbit interaction （SOI） and polaronic effect on the ground-state energy of electrons in semiconductor quantum rings （QRs） are studied by means of the Lee-Low-Pines variational method. Numerical calculations for GaAs QRs are performed and the results show that the ground-state energy of electrons splits into two branches as E（↑） and E（↓） under the Rashba SOI, which correspond to the spin-up state and spin-down state, respectively. The contribution of the Rashba SOI effect to the ground-state energy of electrons is related to the spin state of electrons and is closely linked to the inner and outer radii of a QR. However, it is independent of the height of the QR. The ground-state energy of electrons decreases due to the polaronic effect in QRs. The energy shift ＆#8710;Ee-LO of the ground-state of the electron induced by the polaronic effect decreases monotonically with increase of the height of a QR and fluctuates with the changes of the radii of QRs. The amplitude of the fluctuation is very sensitive and remarkable to the changes of the inner radius R1 and the outer radius R2.

A pure spin-current injector of semiconductor quantum dots with Andreev reflection and Rashba spin-orbit coupling

We propose a four-terminal device consisting of two parallel quantum dots with Rashba spin-orbit interaction （RSOI）, coupled to two side superconductor leads and two common ferromagnetic leads, respectively. The two ferromagnetic leads and two quantum dots form a ring threaded by Aharonov-Bohm （AB） flux. This device possesses normal quasiparticle transmission between the two ferromagnetic leads, and normal and crossed Andreev reflections providing conductive holes. For the appropriate spin polarization of the ferromagnetic leads, RSOI and AB flux, the pure spin-up （or spin-down） current without net charge current in the right lead, which is due to the equal numbers of electrons and holes with the same spin-polarization moving along the same direction, can be obtained by adjusting the gate voltage, which may be used in practice as a pure spin-current injector.

Berry phase of coupled two arbitrary spins in a time-varying magnetic field

In this paper, we investigate the Berry phase of two coupled arbitrary spins driven by a time-varying magnetic field where the Hamiltonian is explicitly tlme-dependent. Using a technique of time-dependent gauge transform the Berry phase and time-evolution operator are found explicitly in the adiabatic approximation. The general solutions for arbitrary spins are applied to the spin-1/2 system as an example of explanation.

Temperature and hydrogen-like impurity effects on the excited state of the strong coupling bound polaron in a CsI quantum pseudodot

With hydrogen-like impurity（HLI） located in the center of Cs I quantum pseudodot（QPD） and by using the variational method of Pekar type（VMPT）, we investigate the first-excited state energy（FESE）, excitation energy and transition frequency of the strongly-coupled bound polaron in the present paper. Temperature effects on bound polaron properties are calculated by employing the quantum statistical theory（QST）. According to the present work＇s numerical results, the FESE, excitation energy and transition frequency decay（amplify） with raising temperature in the regime of lower（higher）temperature. They are decreasing functions of Coulomb impurity potential strength.

Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface

The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier EB=0.1～0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.

Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer,are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system.The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.

Simulation of multilayer Cu/Pd（100） heteroepitaxial growth by pulse laser deposition

The heteroepitaxial growth of multilayer Cu/Pd（100） thin film via pulse laser deposition （PLD） at room temperature is simulated by using kinetic Monte Carlo （KMC） method with realistic physical parameters. The effects of mass transport between interlayers, edge diffusion of adatoms along the islands and instantaneous deposition are considered in the simulation model, Emphasis is placed on revealing the details of multilayer Cu/Pd（100） thin film growth and estimating the Ehrlich-Schwoebel （ES） barrier. It is shown that the instantaneous deposition in the PLD growth gives rise to the layer-by-layer growth mode, persisting up to about 9 monolayers （ML） of Cu/Pd（100）. The ES barriers of 0.08 ± 0.01 eV is estimated by comparing the KMC simulation results with the real scanning tunnelling microscopy （STM） measurements,

Coverage Dependence of Growth Mode in Heteroepitaxy of Ni on Cu(100) Surface

A realistic kinetic Monte Carlo （KMC） simulation model with physical parameters is developed, which well reproduces the heteroepitaxial growth of multilayered Ni thin film on Cu（100） surfaces at room temperature. The effects of mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model, and the surface roughness and the layer distribution versus total coverage are calculated. Speeially, the simulation model reveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu（100） and the Ni homoepitaxy on Ni（100）. Through comparison of KMC simulation with the real scanning tunneling microscopy （STM） experiments, the Ehrlich-Schwoebel （ES） barrier Ees is estimated to be 0.18±0.02 eV for Ni/Cu（100） system while 0.28 eV for Ni/Ni（100）. The simulation also shows that the growth mode depends strongly on the thickness of thin film and the surface temperature, and the critical thickness of growth mode transition is dependent on the growth condition such as surface temperature and deposition flux as well.

A Diffusion Model of Field-Induced Aggregation in Ferrofluid Film

By introducing Arrhenius behaviour to the ferroparticles on the surface of the aggregated columnar structure in a diffusion model, equilibrium equations are set up. The solution of the equations shows that to keep the aggregated structures stable, a characteristic field is needed. The aggregation is enhanced by magnetic fields, yet suppressed as the temperature increases. Analysing the influence of the magnetic field on the interaction energy between the dipolar particles, we estimate the portion of the diffusing particles, and provide the agreeable ratio of the column radius over the centre-to-centre spacing between columns in a hexagonal columnar structure formed under a perpendicular magnetic field.

Analysis of thermal conductivity in tree-like branched networks

Asymmetric tree-like branched networks are explored by geometric algorithms. Based on the network, an analysis of the thermal conductivity is presented. The relationship between effective thermal conductivity and geometric structures is obtained by using the thermal-electrical analogy technique. In all studied cases, a clear behaviour is observed, where angle （δ,θ） among parent branching extended lines, branches and parameter of the geometric structures have stronger effects on the effective thermal conductivity. When the angle δ is fixed, the optical diameter ratio β＋ is dependent on angle θ. Moreover, γand m are not related to β＊. The longer the branch is, the smaller the effective thermal conductivity will be. It is also found that when the angle θ〈δ2, the higher the iteration m is, the lower the thermal conductivity will be and it tends to zero, otherwise, it is bigger than zero. When the diameter ratio β1 〈 0.707 and angle δ is bigger, the optimal k of the perfect ratio increases with the increase of the angle δ; when β1 〉 0.707, the optimal k decreases. In addition, the effective thermal conductivity is always less than that of single channel material. The present results also show that the effective thermal conductivity of the asymmetric tree-like branched networks does not obey Murray＇s law.

Structure and Magnetic Properties of FeCo/Al_2O_3 Nanocomposites

The soft magnetic nanocomposites with equiatomic FeCo particles dispersed in Al2O3 matrix were synthesized via a sol-gel technique combined with H2 reduction method. The samples were characterized by X-ray diffraction, transmission electron microscopy and vibrating sample magnetometer. The FeCo nanoparticles in all the samples have the typical bcc structure. With the decreasing of Al2O3 content, the mean grain size of FeCo in the nanocomposites and the saturation magnetization of the samples increase, while the coercivity of samples increases firstly and then decreases due to different magnetic mechanisms.