Foreword to the Journal of Microelectronic Manufacturing

Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers.

The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver with 1/4 rate reconfigurable 4-tap FFE and half-rate slicer in a 28-nm CMOS

A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver(TRx)designed in a 28-nm complementary metal-oxide-semiconduc-tor(CMOS)process is presented in this article.A voltage-mode(VM)driver featuring a 4-tap reconfigurable feed-forward equal-izer(FFE)is employed in the quarter-rate transmitter(TX).The half-rate receiver(RX)incorporates a continuous-time linear equal-izer(CTLE),a 3-stage high-speed slicer with multi-clock-phase sampling,and a clock and data recovery(CDR).The experimen-tal results show that the TRx operates at a maximum speed of 56 Gb/s with chip-on board(COB)assembly.The 28 Gb/s NRZ eye diagram shows a far-end vertical eye opening of 210 mV with an output amplitude of 351 mV single-ended and the 56 Gb/s PAM-4 eye diagram exhibits far-end eye opening of 33 mV(upper-eye),31 mV(mid-eye),and 28 mV(lower-eye)with an output amplitude of 353 mV single-ended.The recovered 14 GHz clock from the RX exhibits random jitter(RJ)of 469 fs and deterministic jitter(DJ)of 8.76 ps.The 875 Mb/s de-multiplexed data features 593 ps horizontal eye opening with 32.02 ps RJ,at bit-error rate(BER)of 10-5(0.53 UI).The power dissipation of TX and RX are 125 and 181.4 mW,respectively,from a 0.9-V sup-ply.

Activation Redistribution Based Hybrid Asymmetric Quantization Method of Neural Networks

The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedded devices.In order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer network.However,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not symmetric.This often comes at the cost of lower accuracy.This paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural networks.The proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural network.The experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,respectively.The proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing resources.Codes will be available on https://github.com/ycjcy/Hybrid-Asymmetric-Quantization.

A 16-bit 18-MSPS flash-assisted SAR ADC with hybrid synchronous and asynchronous control logic

This paper presents a 16-bit,18-MSPS(million samples per second)flash-assisted successive-approximation-register(SAR)analog-to-digital converter(ADC)utilizing hybrid synchronous and asynchronous(HYSAS)timing control logic based on an on-chip delay-locked loop(DLL).The HYSAS scheme can provide a longer settling time for the capacitive digital-to-analog converter(CDAC)than the synchronous and asynchronous SAR ADC.Therefore,the issue of incomplete settling or ringing in the DAC voltage for cases of either on-chip or off-chip reference voltage can be solved to a large extent.In addition,the fore-ground calibration of the CDAC’s mismatch is performed with a finite-impulse-response bandpass filter(FIR-BPF)based least-mean-square(LMS)algorithm in an off-chip FPGA(field programmable gate array).Fabricated in 40-nm CMOS process,the proto-type ADC achieves 94.02-dB spurious-free dynamic range(SFDR),and 75.98-dB signal-to-noise-and-distortion ratio(SNDR)for a 2.88-MHz input under 18-MSPS sampling rate.

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

Microwave-induced thermoacoustic elastic imaging:A simulation study

Microwave-induced thermoacoustic imaging(MTI)has the advantages of high resolution,high contrast,non-ionization,and non-invasive.Recently,MTI was used in the¯eld of breast cancer screening.In this paper,based on the¯nite element method(FEM)and COMSOL Multiphysics software,a three-dimensional breast cancer model suitable for exploring the MTI process is proposed to investigate the in°uence of Young's modulus(YM)of breast cancer tissue on MTI.It is found that the process of electromagnetic heating and initial pressure generation of the entire breast tissue is earlier in time than the thermal expansion process.Besides,compared with normal breast tissue,tumor tissue has a greater temperature rise,displacement,and pressure rise.In particular,YM of the tumor is related to the speed of thermal expansion.In particular,the larger the YM of the tumor is,the higher the heating and contraction frequency is,and the greater the maximum pressure is.Di®erent Young's moduli correspond to di®erent thermoacoustic signal spectra.In MTI,this study can be used to judge di®erent degrees of breast cancer based on elastic imaging.In addition,this study is helpful in exploring the possibility of microwave-induced thermoacoustic elastic imaging(MTAE).

一种小型化人工表面等离激元传感系统——实现自适应和高灵敏的气体检测

Resonantly enhanced dielectric sensing has superior sensitivity and accuracy because the signal is measured from relative resonance shifts that are immune to signal fluctuations.For applications in the Internet of Things(IoT),accurate detection of resonance frequency shifts using a compact circuit is in high demand.We proposed an ultracompact integrated sensing system that merges a spoof surface plasmon resonance sensor with signal detection,processing,and wireless communication.A softwaredefined scheme was developed to track the resonance shift,which minimized the hardware circuit and made the detection adaptive to the target resonance.A microwave spoof surface plasmon resonator was designed to enhance sensitivity and resonance intensity.The integrated sensing system was constructed on a printed circuit board with dimensions of 1.8 cm×1.2 cm and connected to a smartphone wirelessly through Bluetooth,working in both frequency scanning mode and resonance tracking mode and achieving a signal-to-noise ratio of 69 dB in acetone vapor sensing.This study provides an ultracompact,accurate,adaptive,sensitive,and wireless solution for resonant sensors in the IoT.

Multiframe-integrated, in-sensor computing using persistent photoconductivity

The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS_(2) photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)films.Such a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)phase.Theoretical calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)planes.Therefore,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation stability.Meanwhile,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

Ultraconformable Integrated Wireless Charging Micro-Supercapacitor Skin

Conformable and wire-less charging energy storage devices play important roles in enabling the fast development of wearable,non-contact soft electronics.However,current wire-less charging power sources are still restricted by limited flexural angles and fragile connection of components,resulting in the failure expression of performance and constraining their fur-ther applications in health monitoring wearables and moveable artificial limbs.Herein,we present an ultracompatible skin-like integrated wireless charging micro-supercapacitor,which building blocks(including electrolyte,electrode and substrate)are all evaporated by liquid precursor.Owing to the infiltration and permeation of the liquid,each part of the integrated device attached firmly with each other,forming a compact and all-in-one configuration.In addition,benefitting from the controllable volume of electrode solution precursor,the electrode thickness is easily regulated varying from 11.7 to 112.5μm.This prepared thin IWC-MSC skin can fit well with curving human body,and could be wireless charged to store electricity into high capacitive micro-supercapacitors(11.39 F cm-3)of the integrated device.We believe this work will shed light on the construction of skin-attachable electronics and irregular sensing microrobots.

Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual‑Olfactory Crossmodal Perception

The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

Revealing the atomic mechanism of diamond–iron interfacial reaction

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide attention.However,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based devices.Herein,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been established.Surprisingly,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies sites.Meanwhile,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)C.Moreover,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon atoms.The present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Discrete multi-step phase hologram for high frequency acoustic modulation

Acoustic holograms can recover wavefront stored acoustic field information and produce high-fidelity complex acoustic fields. Benefiting from the huge spatial information that traditional acoustic elements cannot match, acoustic holograms pursue the realization of high-resolution complex acoustic fields and gradually tend to high-frequency ultrasound applications. However, conventional continuous phase holograms are limited by three-dimensional(3D) printing size, and the presence of unavoidable small printing errors makes it difficult to achieve acoustic field reconstruction at high frequency accuracy. Here, we present an optimized discrete multi-step phase hologram. It can ensure the reconstruction quality of image with high robustness, and properly lower the requirement for the 3D printing accuracy. Meanwhile, the concept of reconstruction similarity is proposed to refine a measure of acoustic field quality. In addition, the realized complex acoustic field at 20 MHz promotes the application of acoustic holograms at high frequencies and provides a new way to generate high-fidelity acoustic fields.

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.

Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent years.In this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is investigated.On the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and accuracy.On the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing accuracy.Even after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of memory.Further characterizations are done on read disturb to demonstrate its robust reliabilities.By processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN.Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators.

Reinforcement Learning Based Quantization Strategy Optimal Assignment Algorithm for Mixed Precision

The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to databit width. Reducing the data bit width will result in a loss of accuracy. Therefore, it is difficult to determinethe optimal bit width for different parts of the network with guaranteed accuracy. Mixed precision quantizationcan effectively reduce the amount of computation while keeping the model accuracy basically unchanged. In thispaper, a hardware-aware mixed precision quantization strategy optimal assignment algorithm adapted to low bitwidth is proposed, and reinforcement learning is used to automatically predict the mixed precision that meets theconstraints of hardware resources. In the state-space design, the standard deviation of weights is used to measurethe distribution difference of data, the execution speed feedback of simulated neural network accelerator inferenceis used as the environment to limit the action space of the agent, and the accuracy of the quantization model afterretraining is used as the reward function to guide the agent to carry out deep reinforcement learning training. Theexperimental results show that the proposed method obtains a suitable model layer-by-layer quantization strategyunder the condition that the computational resources are satisfied, and themodel accuracy is effectively improved.The proposed method has strong intelligence and certain universality and has strong application potential in thefield of mixed precision quantization and embedded neural network model deployment.

A multichannel thermal bubble-actuated impedance flow cytometer with on-chip TIA based on CMOS-MEMS

Electrochemical impedance spectroscopy(EIS)flow cytometry offers the advantages of speed,affordability,and portability in cell analysis and cytometry applications.However,the integration challenges of microfluidic and EIS read-out circuits hinder the downsizing of cytometry devices.To address this,we developed a thermal-bubble-driven impedance flow cytometric application-specific integrated circuit(ASIC).The thermal-bubble micropump avoids external piping and equipment,enabling high-throughput designs.With a total of 36 cell counting channels,each measuring 884×220μm^(2),the chip significantly enhances the throughput of flow cytometers.Each cell counting channel incorporates a differential trans-impedance amplifier(TIA)to amplify weak biosensing signals.By eliminating the parasitic parameters created at the complementary metal-oxidesemiconductor transistor(CMOS)-micro-electromechanical systems(MEMS)interface,the counting accuracy can be increased.The on-chip TIA can adjust feedback resistance from 5 to 60 kΩto accommodate solutions with different impedances.The chip effectively classifies particles of varying sizes,demonstrated by the average peak voltages of 0.0529 and 0.4510 mV for 7 and 14μm polystyrene beads,respectively.Moreover,the counting accuracies of the chip for polystyrene beads and MSTO-211H cells are both greater than 97.6%.The chip exhibits potential for impedance flow cytometer at low cost,high-throughput,and miniaturization for the application of point-of-care diagnostics.

Broadband bidirectional Brillouin–Raman random fiber laser with ultra-narrow linewidth

We present a Brillouin–Raman random fiber laser(BRRFL)with full-open linear cavity structure to generate broadband Brillouin frequency comb(BFC)with double Brillouin-frequency-shift spacing.The incorporation of a regeneration portion consisting of an erbium-doped fiber and a single-mode fiber enables the generation of broadband BFC.The dynamics of broadband BFC generation changing with the pump power(EDF and Raman)and Brillouin pump(BP)wavelength are investigated in detail,respectively.Under suitable conditions,the bidirectional BRRFL proposed can produce a flatamplitude BFC with 40.7-nm bandwidth ranging from 1531 nm to 1571.7 nm,and built-in 242-order Brillouin Stokes lines(BSLs)with double Brillouin-frequency-shift spacing.Moreover,the linewidth of single BSL is experimentally measured to be about 2.5 kHz.The broadband bidirectional narrow-linewidth BRRFL has great potential applications in optical communication,optical sensing,spectral measurement,and so on.