Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Comparison of displacement damage effects on the dark signal in CMOS image sensors induced by CSNS back-n and XAPR neutrons

This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.

Two-dimensional particle-in-cell modeling of blow-off impulse by X-ray irradiation

Space objects such as spacecraft or missiles may be exposed to intense X-rays in outer space,leading to severe damage.The reinforcement of these objects to reduce the damage caused by X-ray irradiation is a significant concern.The blow-off impulse(BOI)is a crucial physical quantity for investigating material damage induced by X-ray irradiation.However,the accurate calculation of BOI is challenging,particularly for large deformations of materials with complex configurations.In this study,we develop a novel two-dimensional particle-in-cell code,Xablation2D,to calculate BOIs under far-field X-ray irradiation.This significantly reduces the dependence of the numerical simulation on the grid shape.The reliability of this code is verified by simulation results from open-source codes,and the calculated BOIs are consistent with the experimental and analytical results.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Effect of surface modification on the radiation stability of diamond ohmic contacts

The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.

Five-view three-dimensional reconstructionfor ultrafast dynamic imaging of pulsedradiation sources

Multiaxial neutron/x-ray imaging and three-dimensional (3D) reconstruction techniques play a crucial role in gaining valuable insights intothe generation and evolution mechanisms of pulsed radiation sources. Owing to the short emission time (∼200 ns) and drastic changes of thepulsed radiation source, it is necessary to acquire projection data within a few nanoseconds in order to achieve clear computed tomography3D imaging. As a consequence, projection data that can be used for computed tomography image reconstruction at a certain moment are oftenavailable for only a few angles. Traditional algorithms employed in the process of reconstructing 3D images with extremely incomplete datamay introduce significant distortions and artifacts into the final image. In this paper, we propose an iterative image reconstruction methodusing cylindrical harmonic decomposition and a self-supervised denoising network algorithm based on the deep image prior method. Weaugment the prior information with a 2D total variation prior and a 3D deep image prior. Single-wire Z-pinch imaging experiments have beencarried out at Qin-1 facility in five views and four frames, with a time resolution of 3 ns for each frame and a time interval of 40 ns betweenadjacent frames. Both numerical simulations and experiments verify that our proposed algorithm can achieve high-quality reconstructionresults and obtain the 3D intensity distribution and evolution of extreme ultraviolet and soft x-ray emission from plasma.

Model of self-generated magnetic field generation from relativistic laser interaction with solid targets

Generation of self-generated annular magnetic fields at the rear side of a solid target driven by relativistic laser pulse is investigated by using theoretical analysis and particle-in-cell simulations.The spatial strength distribution of magnetic fields can be accurately predicted by calculating the net flow caused by the superposition of source flow and return flow of hot electrons.The theoretical model established shows good agreement with the simulation results,indicating that the magnetic-field strength scales positively to the temperature of hot electrons.This provides us a way to improve the magnetic-field generation by using a micro-structured plasma grating in front of the solid target.Compared with that for a common flat target,hot electrons can be effectively heated with the well-designed grating size,leading to a stronger magnetic field.The spatial distribution of magnetic fields can be modulated by optimizing the grating period and height as well as the incident angle of the laser pulse.

Study of the response of 10B-doped MCP to wide-energy range neutrons from eV to MeV

Neutron-sensitive microchannel plates(nMCPs)have applications in neutron detection,including energy spectrum measurements,neutron-induced cross sections,and neutron imaging.10B-doped MCPs(B-MCPs)have attracted significant attention owing to their potential for exhibiting a high neutron detection efficiency over a large neutron energy range.Good spatial and temporal resolutions are useful for neutron energy-resolved imaging.However,their practical applications still face many technical challenges.In this study,a B-MCP with 10 mol%10B was tested for its response to wide-energy neutrons from eV to MeV at the Back-n white neutron source at the China Spallation Neutron Source.The neutron detection efficiency was calibrated at 1 eV,which is approximately 300 times that of an ordinary MCP and indicates the success of 10 B doping.The factors that caused the reduction in the detection efficiency were simulated and discussed.The neutron energy spectrum obtained using B-MCP was compared with that obtained by other measurement methods,and showed very good consistency for neutron energies below tens of keV.The response is more complicated at higher neutron energy,at which point the elastic and nonelastic reactions of all nuclides of B-MCP gradually become dominant.This is beneficial for the detection of neutrons,as it compensates for the detection efficiency of B-MCP for high-energy neutrons.

In-beam gamma rays of CSNS Back-n characterized by black resonance filter

The back-streaming white-neutron beamline(Back-n)of the China Spallation Neutron Source is an essential neutronresearch platform built for the study of nuclear data,neutron physics,and neutron applications.Many types of cross-sectional neutron-reaction measurements have been performed at Back-n since early 2018.These measurements have shown that a significant number of gamma rays can be transmitted to the experimental stations of Back-n along with the neutron beam.These gamma rays,commonly referred to as in-beam gamma rays,can induce a non-negligible experimental background in neutron-reaction measurements.Studying the characteristics of in-beam gamma rays is important for understanding the experimental background.However,measuring in-beam gamma rays is challenging because most gamma-ray detectors are sensitive to neutrons;thus,discriminating between neutron-induced signals and those from in-beam gamma rays is difficult.In this study,we propose the use of the black resonance filter method and a CeBr_(3) scintillation detector to measure the characteristics of the in-beam gamma rays of Back-n.Four types of black resonance filters,^(181)Ta,^(59)Co,^(nat)Ag,and^(nat)Cd,were used in this measurement.The time-of-flight(TOF)technique was used to select the detector signals remaining in the absorption region of the TOF spectra,which were mainly induced by in-beam gamma rays.The energy distribution and flux of the in-beam gamma rays of Back-n were determined by analyzing the deposited energy spectra of the CeBr_(3) scintillation detector and using Monte Carlo simulations.Based on the results of this study,the background contributions from in-beam gamma rays in neutron-reaction measurements at Back-n can be reasonably evaluated,which is beneficial for enhancing both the experimental methodology and data analysis.

Experimental Investigations on Trigger Characteristics of Pseudospark Switch Based on Surface Flashover Technology

A trigger device and a triggered pseudospark switch （TPSS） were designed based on surface flashover technology, in order to meet the requirements from present pulse power technology and pulse current test technology such as a long lifetime, reliability in a wide voltage range, a short delay time, as well as small delay jitters. The trigger devices were made from different dielectric materials, with their permittivities from tens to thousands. The trigger characteristics of TPSS were investigated. The results indicate that the high-dielectric trigger device shows better performance and higher emitted charge of the electron emission within all adjusted parameters including the gas pressure and applied voltage. For the dielectric material with relative permittivity εr of 3460, when the gas pressure is 7 Pa, the hold-off voltage of TPSS is 28 kV, the minimum trigger switch voltage drops to 128 V, the minimum discharging delay time and delay jitter are less than 35ns and 6ns, respectively, and the reliable operation can be reached within a very large range of charging voltage, between 0.46% and 99% of its self-breakdown voltage.

Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.

Proton induced radiation effect of SiC MOSFET under different bias

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

Study of the axial density/impedance gradient composite long rod hypervelocity penetration into a four-layer Q345 target

Based on the dynamic shock response of the material and structure,the hypervelocity impact processes and mechanisms of long composite rods with axial density/impedance gradients penetration into fourlayer targets were studied through experiments and numerical simulation methods.The propagation law of the shock waves,together with the structural responses of the projectiles and targets,the formation and evolution of the fragment groups formed during the processes and their distributions were described.The damage of each target plate was quantitatively analysed by comparing the results of the experiment and numerical simulation.The results showed that the axial density/impedance gradient projectiles could decrease the impact pressure to a certain extent,and the degree of damage to the target plate decreased layer by layer when the head density/impedance of the projectile was high.When the head density/impedance of the projectile was low,the degree of target damage first increased layer by layer until the projectile was completely eroded and then it decreased.The results can provide a reference for the design and application of long rods with axial composite structure for velocities ranging from 6 to 10 Ma or greater.

Effects of anode material on the evolution of anode plasma and characteristics of intense electron beam diode

In this paper,three kinds of materials including graphite,titanium(Ti)and molybdenum(Mo)are used as anodes to figure out the influence factors of anode material on the characteristics of the intense electron beam diode.The results show that the characteristics of diode are mainly determined by the cathode plasma motion under a 15 mm diode gap,in which the typical electron beam parameters are 280 kV,3.5 kA.When the diode gap is reduced to 5 mm,the voltage of the electron beam reduces to about 200 kV,and its current increases to more than 8.2 kA.It is calculated that the surface temperatures of Ti and Mo anodes are higher than their melting points.The diode plasma luminescence images show that Ti and Mo anodes produce plasmas soon after the bombardment of electron beams.Ti and Mo lines are respectively found in the plasma composition of Ti and Mo anode diodes.Surface melting traces are also observed on Ti and Mo anodes by comparing the micromorphologies before and after bombardment of the electron beam.These results suggest that the time of anode plasma generation is closely related to the anode material.Compared with graphite,metal Ti and Mo anodes are more likely to produce large amounts of plasma due to their more significant temperature rise effect.According to the moment that anode plasma begins to generate,the average expansion velocities of cathode and anode plasma are estimated by fitting the improved space-charge limited flow model.This reveals that generation and motion of the anode plasma significantly affect the characteristics of intense electron beam diode.

Hot deformation behavior and microstructure evolution of Be/2024Al composites

The high temperature compression test of Be/2024Al composites with 62wt%Be was conducted at 500–575℃ and strain rate of0.003–0.1 s^(-1).The strain-compensated Arrhenius model and modified Johnson–Cook model were introduced to predict the hot deformation behavior of Be/2024Al composites.The result shows that the activation energy of Be/2024Al composites was 363.364 k J·mol^(-1).Compared with composites reinforced with traditional ceramics,Be/2024Al composites can be deformed with ultra-high content of reinforcement,attributing to the deformable property of Be particles.The average relative error of the two models shows that modified Johnson–Cook model was more suitable for low temperature condition while strain-compensated Arrhenius model was more suitable for high temperature condition.The processing map was generated and a hot extrusion experiment was conducted according to the map.A comparation of the microstructure of Be/2024Al composites before and after extrusion shows that the Be particle deformed coordinately with the matrix and elongated at the extrusion direction.

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Relaxation of Ne^(1+)1s^(0)2s^(2)2p^(6)np produced by resonant excitation of an ultraintense ultrafast x-ray pulse

The creation and relaxation of double K-hole states 1s^(0)2s^(2)2p^(6)np(n≥3)of Ne^(1+)in the interaction with ultraintense ultrafast x-ray pulses are theoretically investigated.The x-ray photon energies are selected so that x-rays first photoionize1s^(22)s^(22)p^(6) of a neon atom to create a single K-hole state of 1s2s^(22)p^(6) of Ne^(1+),which is further excited resonantly to double K-hole states of ls^(0)2s^(2)2p^(6)np(n≥3).A time-dependent rate equation is used to investigate the creation and relaxation processes of 1s^(0)2s^(2)2p^(6)np,where the primary microscopic atomic processes including photoexcitation,spontaneous radiation,photoionization and Auger decay are considered.The calculated Auger electron energy spectra are compared with recent experimental results,which shows good agreement.The relative intensity of Auger electrons is very sensitive to the photon energy and bandwidth of x-ray pulses,which could be used as a diagnostic tool for x-ray free electron laser and atom experiments.

Observation and mitigation of image distortion in high-energy electron radiography

Image distortion caused by the angular misalignment of quadrupole magnets in high-energy electron radiography has been studied systematically.We propose that the distortion originates from the coupling of the electron motions in the transverse directions,based on a theoretical analysis and the transfer-matrix method.The relative angular rotation between the second and third magnetic quadrupoles was identified as the main contributor to image distortion.This was verified by both a beam-dynamics simulation and experiments.Different strategies to mitigate this image distortion are also explored,including magnets online tuning,higher beam energy and larger magnification factor.This study provides criteria for designing experiments and paves the way for achieving higher image precision.

Charge collection narrowing mechanism in electronic-grade-diamond photodetectors

Recently,an extreme narrowband spectral response of only 8 nm in electronic-grade diamond-based photodetectors has been observed by Zheng Wei and his colleagues from Sun Yat-sen University for the first time.A charge collection narrowing mechanism assisted by free exciton radiative recombination is proposed,which well reveals the characteristic spectral response of diamond.