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Structural,spectroscopic,and dielectric characterizations of Mn-doped 0.67BiFeO_(3)-0.33BaTiO_(3)multiferroic ceramics 被引量:3
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作者 Qiming HANG Wenke ZHOU +3 位作者 Xinhua ZHU Jianmin ZHU Zhiguo LIU Talaat AL-KASSAB 《Journal of Advanced Ceramics》 SCIE CAS 2013年第3期252-259,共8页
0.67BiFeO_(3)-0.33BaTiO_(3)multiferroic ceramics doped with x mol%MnO_(2)(x=2-10)were synthesized by solid-state reaction.The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffracti... 0.67BiFeO_(3)-0.33BaTiO_(3)multiferroic ceramics doped with x mol%MnO_(2)(x=2-10)were synthesized by solid-state reaction.The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction(XRD).The average grain sizes were reduced from 0.80mm to 0.50mm as increasing the Mn-doped levels.Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy(HRTEM)images and electron diffraction patterns.Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images.Ferroelectric domain lamellae(71°ferroelectric domains)with an average width of 5 nm were also observed.Vibrational modes were examined by Raman spectra,where only four Raman peaks at 272 cm^(-1)(E-4 mode),496 cm^(-1)(A_(1)-4 mode),639 cm^(-1),and 1338 cm^(-1)were observed.The blue shifts in the E-4 and A_(1)-4 Raman mode frequencies were interpreted by a spring oscillator model.The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve.They were in the range of 350-700 measured at 10^(3)Hz,and the corresponding dielectric losses were in range of 0.43-0.96,approaching to 0.09 at 10^(6)Hz. 展开更多
关键词 multiferroic ceramics dielectric properties Raman spectra microstructure
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Effective N-methyl-2-pyrrolidone wet cleaning for fabricating highperformance monolayer MoS2 transistors 被引量:1
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作者 Po-Chun Chen Chih-Pin Lin +10 位作者 Chuan-Jie Hong Chih-Hao Yang Yun-Yan Lin Ming-Yang Li Lain-Jong Li Tung-Yuan Yu Chun-Jung Su Kai-Shin Li Yuan-Liang Zhong Tuo-Hung Hou Yann-Wen Lan 《Nano Research》 SCIE EI CAS CSCD 2019年第2期303-308,共6页
Two-dimensional semiconductors,such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication,which could adversely affect device performance.To ensure high device yi... Two-dimensional semiconductors,such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication,which could adversely affect device performance.To ensure high device yield,uniformity and performance,the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations,adsorbates,and native oxides from the surface of Si wafers.A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed.In this study,we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone.The cleaning process not only preserves the intrinsic properties of monolayer MoS2,but also significantly improves the performance of monolayer MoS2 field-effect-transistors.Superior device on current of 12 μA·μm-1 for a channel length of 400 nm,contact resistance of 15 kΩ·μm,field-effect mobility of 15.5 cm^2·V^-1·s^-1,and the average on-off current ratio of 10^8 were successfully demonstrated. 展开更多
关键词 MONOLAYER M0S2 devices standard WET cleaning FIELD-EFFECT TRANSISTORS N-METHYL-2-PYRROLIDONE
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