Wet thermal annealing effect on TaN/HfO_2/Ge metal-oxide-semiconductor capacitors with and without a GeO_2 passivation layer

Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor （MOS） structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance-voltage （C-V） and current-voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 ℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2, which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors. However, wet thermal annealing at 400 ℃ can decrease the GeOx interlayer thickness at the HfO2/Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeOx in the wet ambient. The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C V characteristics for the as-prepared HfO2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent.

Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications

In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polarizer.To address this inefficiency and optimize energy utilization,this study presents a high-performance device designed for RGB polarized emissions.The device employs an array of semipolar blueμLEDs with inherent polarization capabilities,coupled with mechanically stretched films of green-emitting CsPbBr3 nanorods and red-emitting CsPbI3-Cs4PbI6 hybrid nanocrystals.The CsPbBr3 nanorods in the polymer film offer intrinsic polarization emission,while the aligned-wire structures formed by the stable CsPbI3-Cs4PbI6 hybrid nanocrystals contribute to substantial anisotropic emissions,due to their high dielectric constant.The resulting device achieved RGB polarization degrees of 0.26,0.48,and 0.38,respectively,and exhibited a broad color gamut,reaching 137.2%of the NTSC standard and 102.5%of the Rec.2020 standard.When compared to a device utilizing c-plane LEDs for excitation,the current approach increased the intensity of light transmitted through the polarizer by 73.6%.This novel fabrication approach for polarized devices containing RGB components holds considerable promise for advancing next-generation display technologies.

宽光束、高均匀性显示贴片灯珠的光学仿真设计

本文通过分析目前显示器用的高均匀宽角度灯珠的光学要求,采用新型非朗伯(non-Lambertian)分布封装Micro-LED芯片,实现了宽光束、高均匀性的微型LED芯片光珠。分析了在不同封装倾角、封装高度、封装材料、封装支架材料、蓝宝石厚度和图案化蓝宝石衬底尺寸下,使用由不同封装材料(铜、钛、铝和银)和材料类型(完全反射和完全吸收)组成的支架模拟固定灯珠的光输出效率和出光角度的变化情况。研究发现通过调整材料、芯片和封装参数,可以得到一个、两个或三个光束,具有贴片灯珠的宽角度、高均匀性的远场光分布特性,满足当前LED和LCD的显示要求。

Correction to:Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short

Correction to:Nano-Micro Lett.(2023)15:223 https://doi.org/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the first paragraph of Introduction,the text‘(20-20)’should have read‘(20-21)’.The original article has been corrected.

加速器联机装置运行状况

2008年武汉大学加速器联机系统初步建成,200 kV离子注入机至透射电镜束线进行了运行调试,开展了气体离子注入单晶Si、GaAs、Ag纳米晶和超临界反应堆材料(C276和6XN)的原位结构研究。结果表明,样品在注入至一定剂量时发生明显多晶和非晶化,单晶Si出现非晶化的临界剂量在10^(14) cm^(-2)。C276材料经1×10^(15)cm^(-2)的Ar离子辐照后,产生尺寸3-12 nm的位错环,其密度随剂量提高而增大,至5×10^(15)cm^(-2)出现多晶,剂量超过3×10^(16) cm^(-2)出现非晶化。在加速器-电镜联机光路上安装在线RBS靶室对离子束辐照材料进行元素成分和晶格定位测试。靠近电镜端安装50 kV低能离子源,开展核材料中氦泡形成过程的原位观测。对RBS/C装置进行数字化改造,用Labview控制系统运行,目前可进行计算机控制的背散射沟道测试。

硅缓冲层提高选区外延生长硅基锗薄膜质量

研究了Si缓冲层对选区外延Si基Ge薄膜的晶体质量的影响。利用超高真空化学气相沉积系统,结合低温Ge缓冲层和选区外延技术,通过插入Si缓冲层,在Si/SiO_2图形衬底上选择性外延生长Ge薄膜。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)表征了Ge薄膜的晶体质量和表面形貌。测试结果表明,选区外延Ge薄膜的晶体质量比无图形衬底外延得到薄膜的晶体质量要高;选区外延Ge薄膜前插入Si缓冲层得到Ge薄膜具有较低的XRD曲线半高宽以及表面粗糙度,位错密度低至5.9×10~5/cm^2,且薄膜经过高低温循环退火后,XRD曲线半高宽和位错密度进一步降低。通过插入Si缓冲层可提高选区外延Si基Ge薄膜的晶体质量,该技术有望应用于Si基光电集成。

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.

First principles study on the charge density and the bulk modulus of the transition metals and their carbides and nitrides

A first principles study of the electronic properties and bulk modulus （B0） of the fcc and bcc transition metals, transition metal carbides and nitrides is presented. The calculations were performed by plane-wave pseudopotential method in the framework of the density functional theory with local density approximation. The density of states and the valence charge densities of these solids are plotted. The results show that B0 does not vary monotonically when the number of the valence d electrons increases. B0 reaches a maximum and then decreases for each of the four sorts of solids. It is related to the occupation of the bonding and anti-bonding states in the solid. The value of the valence charge density at the midpoint between the two nearest metal atoms tends to be proportional to B0.

硅(100)衬底表面快速热退火制备硒纳米晶薄膜的结晶动力学

采用超高真空气相沉积系统在Si(100)衬底上制备非晶硒(Se)薄膜,然后快速热退火制得Se纳米晶薄膜。SEM观察结果表明,当热退火温度高于140℃,薄膜表面形貌从条状裂纹逐渐变成孤立的六角块状结构。Raman和XRD测试分析发现,退火后的Se纳米晶均为三角晶型结构,当退火温度高于140℃时,Se开始沿(100)方向择优取向结晶。分析得出,在Si(100)衬底上的Se晶粒(100)晶面的激活能比(101)晶面的激活能低,因而在(100)面上的结晶速率比(101)面上的结晶速率大,使得Se在(100)方向择优结晶。笔者认为这是因为Si(100)衬底对Se的结晶具有诱导作用,致使硒的结晶具有各向异性。

基于两步退火法提升Al/n^+Ge欧姆接触及Ge n^+/p结二极管性能

锗(Ge)中高激活浓度、低扩散深度的n型掺杂是实现高性能Ge n-MOSFET的重要前提条件.本文采用低温预退火与脉冲激光退火相结合的两步退火法,结合磷离子注入,制备Al/n+Ge的欧姆接触以及Ge n+/p结二极管.通过电流-电压特性测试来研究Al/n+Ge的欧姆接触以及Ge n+/p结二极管的性能,测试结果表明:低温预退火可初步修复注入损伤,并降低激光退火时杂质的扩散深度;结合离子注入工艺和两步退火工艺,Al/n+Ge欧姆接触的比接触电阻率降至2.61×10-6Ω·cm2,Ge n+/p结二极管在±1V的整流比提高到8.35×106,欧姆接触及二极管性能均得到了显著提升.

14.46% Efficiency small molecule organic photovoltaics enabled by the well trade-off between phase separation and photon harvesting

Small molecule organic photovoltaics(SMPVs) were prepared by utilizing liquid crystalline donor material BTR-Cl and two similar optical bandgap non-fullerene acceptor materials BTP-BO-4 F and Y6.The BTPBO-4 F and Y6 have the similar optical bandgap and different absorption coefficients.The corresponding binary SMPVs exhibit different short circuit current density(/sc)(20.38 vs.23.24 mA cm^(-2)),and fill factor(FF)(70.77% vs.67.21%).A 14.46% power conversion efficiency(PCE) is acquired in ternary SMPVs with 30 wt% Y6,companied with a JSC of 24.17 mA cm^(-2) a FF of 68.78% and an open circuit voltage(Voc) of 0.87 V.The improvement on PCE of ternary SMPVs should originate from the well trade-off between phase separation and photon harvesting of ternary active layers by incorporating 30 wt% Y6 in acceptors.This work may deliver insight onto the improved performance of SMPVs by superposing the superiorities of binary SMPVs with similar optical bandgap acceptors into one ternary cell.

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride

Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.

Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.

Applications of lasers:A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays

Micro-light-emitting diodes(micro-LEDs)with outstanding performance are promising candidates for next-generation displays.To achieve the application of high-resolution displays such as meta-displays,virtual reality,and wearable electronics,the size of LEDs must be reduced to the micro-scale.Thus,traditional technology cannot meet the demand during the processing of micro-LEDs.Recently,lasers with short-duration pulses have attracted attention because of their unique advantages during micro-LED processing such as noncontact processing,adjustable energy and speed of the laser beam,no cutting force acting on the devices,high efficiency,and low cost.Herein,we review the techniques and principles of laser-based technologies for micro-LED displays,including chip dicing,geometry shaping,annealing,laserassisted bonding,laser lift-off,defect detection,laser repair,mass transfer,and optimization of quantum dot color conversion films.Moreover,the future prospects and challenges of laser-based techniques for micro-LED displays are discussed.

Recent developments in deep-ultraviolet sterilization of human respiratory RNA viruses

Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the developments of recent DUV sterilization research.Recent works have investigated DUV sterilization from the perspective of device improvement and principle investigation:one employed a novel epitaxial structure to optimize the performance and fabrication cost of DUV-LEDs and realized potent virus disinfection effects for various respiratory RNA viruses,and another work explained the disinfection phenomenon of SARS-CoV-2 and its variants(Delta and Omicron)in a cryogenic environment.These studies have contributed significantly to the development of DUV sterilization.

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Polycrystalline Ge1-xSnx（poly-Ge1-xSnx） alloy thin films with high Sn content（〉 10%） were fabricated by cosputtering amorphous GeSna-GeSn on Ge100 wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm^2 to 550 mJ/cm^2. High quality poly-crystal Ge0.90 Sn0.10 and Ge0.82 Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain,and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum（FWHM） is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.

High-speed visible light communication based on micro-LED:A technology with wide applications in next generation communication

The evolution of next-generation cellular networks is aimed at creating faster,more reliable solutions.Both the next-generation 6G network and the metaverse require high transmission speeds.Visible light communication(VLC)is deemed an important ancillary technology to wireless communication.It has shown potential for a wide range of applications in next-generation communication.Micro light-emitting diodes(μLEDs)are ideal light sources for high-speed VLC,owing to their high modulation bandwidths.In this review,an overview ofμLEDs for VLC is presented.Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization,crystal orientation,and active region structure.Moreover,electroluminescent white LEDs,photoluminescent white LEDs based on phosphor or quantum-dot color conversion,andμLED-based detectors for VLC are introduced.Finally,the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced,including underwater VLC and artificial intelligence-based VLC systems.

Optical and magnetic properties of InFeP layers prepared by Fe^+ implantation

InFeP layers are prepared by ion implantation of InP with 100-keV Fe＋ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3＋ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e （10e = 79.5775 A-m-1）, saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

Hafnium disulfide(HfS2) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS2 nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH3)(C2H5))4 and H2S as the reaction precursors. Selflimiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS2 nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS2 crystallinity, while causing crystallization of the mixed HfO2 above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS2 nanocrystals for electronic device or electrochemical applications.

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO？ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain （FDTD） method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.