Detection of hepatitis C virus core antigen for early diagnosis of hepatitis C virus infection in plasma donor in China

AIM: To evaluate the effi cacy of a new hepatitis C virus (HCV) core antigen assay developed in China. METHODS: After the determination of HCV infection, 49 serial samples were selected from 11 regular plasma donors in 5 different plasma stations. To compare the performance of HCV core antigen detection and HCV PCR, these samples were genotyped, and each specimen was analyzed by ELISA for the detection of HCV core antigen and by qualitative HCV PCR. RESULTS: Among all of the sequential samples, the original 13 specimens were HCV RNA-negative, and 36 samples were HCV RNA-positive. Twenty-seven samples (75%) were HCV core antigen-positive from these HCV RNA-positive specimens. Conversely, 27 samples (93.1%) were found HCV RNA-positive in HCV core antigen-positive samples. Intervals between HCV RNA and HCV core antigen-positive, as well as between HCV core antigen-positive and HCV antibody-positive were 36.0 and 32.8 d, respectively. CONCLUSION: This HCV core antigen assay, developed in China, is able to detect much of anti-HCV-negative, HCV RNA-positive preseroconversion window period (PWP) plasma donations.

Simulation of GaN micro-structured neutron detectors for improving electrical properties

Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.

Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Au/Ni/n-type 4H-SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400℃ and 700 ℃ to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500 ℃, the two nickel silicides （i.e., Ni31Sil2 and Ni2Si） are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature, the Ni31Sil2 transforms into the more stable Ni2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600 ℃. As a result, the Au/Ni/n-type 4H-SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700℃.