Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition （CVD） is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11,000 cm2/（V.s） is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of 〉1 um, even at the charge neutrality point of the samples.

Scanning gate imaging of quantum point contacts and the origin of the 0.7 anomaly

The origin of the anomalous transport feature appearing at a conductance G 0.7× （2e2/h） in quasi-lD ballistic devices-the so-called 0.7 anomaly-represents a long standing puzzle. Several mechanisms have been proposed to explain it, but a general consensus has not been achieved. Proposed explanations have been based on quantum interference, the Kondo effect, Wigner crystallization, and other phenomena. A key open issue is whether the point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-lD constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

Dynamical evolution of Ge quantum dots on Si(111):From island formation to high temperature decay

Heteroepitaxial growth is a process of profound fundamental importance as well as an avenue to realize nanostructures such as Ge/Si quantum dots(QDs),with appealing properties for applications in opto-and nanoelectronics.However,controlling the Ge/Si QD size,shape,and composition remains a major obstacle to their practical implementation.Here,Ge nanostructures on Si(111)were investigated in situ and in real-time by low energy electron microscopy(LEEM),enabling the observation of the transition from wetting layer formation to 3D island growth and decay.The island size,shape,and distribution depend strongly on the growth temperature.As the deposition temperature increases,the islands become larger and sparser,consistent with Brownian nucleation and capture dynamics.At 550◦C,two distinct Ge/Si nanostructures are formed with bright and dark appearances that correspond to flat,atoll-like and tall,faceted islands,respectively.During annealing,the faceted islands increase in size at the expense of the flat ones,indicating that the faceted islands are thermodynamically more stable.In contrast,triangular islands with uniform morphology are obtained from deposition at 600◦C,suggesting that the growth more closely follows the ideal shape.During annealing,the islands formed at 600◦C initially show no change in morphology and size and then rupture simultaneously,signaling a homogeneous chemical potential of the islands.These observations reveal the role of dynamics and energetics in the evolution of Ge/Si QDs,which can serve as a step towards the precise control over the Ge nanostructure size,shape,composition,and distribution on Si(111).