Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-...Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.展开更多
When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8....When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.展开更多
文摘Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.
文摘When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and the CdTe/GaAs hybrid substrates suitable for growing Hg_(1-x)Cd_xTe(CMT)were obtained.The x value in CMT is between 0.2 and 0.8.The electrical properties of CMT depend upon the thickness of CdTe epi-layers.The CdTe/GaAs interface was examined by both scanning electron microscope(SEM)and electron auger spectra (EAS).The influence of defects observed at interface on electrical and optical properties of CMT fihns was dis- cussed.
