基片材料与沉积参数对薄膜应力的影响

采用哈特曼-夏克传感器的薄膜应力在线测量仪测量了利用离子辅助电子束蒸发的Si O2,Ti O2,Ta2O5,Al2O3与ITO薄膜在不同厚度时的应力值,并深入研究了基片材料与沉积参数对Si O2,Ti O2薄膜应力的影响。研究结果表明,在成膜的初始阶段,薄膜应力与薄膜厚度基本上呈线性函数,当达到一定厚度时薄膜应力基本趋于一个定值;薄膜与基片的热失配将引起薄膜热应力,通过选择合适的基片材料可以使其降低;对Ti O2薄膜而言,当基片温度低于150℃时,热应力起主要作用,当基片温度高于150℃时,薄膜致密引起的压应力占主导地位,但Si O2薄膜其热应力始终占主导地位;当真空室压强低于1.7×10-2Pa时,Si O2薄膜的张应力主要是由离子辅助溅射效应而引起,当真空室压强高于1.7×10-2Pa时,Si O2薄膜的张应力随着压强的增大而增大,但折射率减小。

Analysis of europium doped luminescent barium thioaluminate

Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2...