The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV ...The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is obtained.The results indicate that the Al_(0.17)Ga_(0.83)N/GaN heterojunction exhibits a type-Ⅰ band alignment.展开更多
Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain curren...Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in A1GaN/GaN HEMTs for short-term direct current stress.展开更多
基金the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No YYY-0701-02the National Natural Science Foundation of China under Grant Nos 60890193 and 61106014+2 种基金the National Basic Research Program of China under Grant Nos 2010CB327503 and 2012CB619303the High-Technology Research and Development Program of China under Grant No 2011AA050514the National Science and Technology Major Project of China。
文摘The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is obtained.The results indicate that the Al_(0.17)Ga_(0.83)N/GaN heterojunction exhibits a type-Ⅰ band alignment.
基金supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYY-0701-02)the National Natural Science Foundation of China(Nos.60890193,61106014)+1 种基金the State Key Development Program for Basic Research of China(No.2010CB327503)the National Science and Technology Major Project
文摘Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in A1GaN/GaN HEMTs for short-term direct current stress.
