We investigate the hysteretic behavior of the angular dependence of exchange bias for a series of polycrystalline NiFe/(FeMn)_(1-x)(MgO)_(x) bilayers with varying x.For x=0.025,the antiferromagnetic layer is of the la...We investigate the hysteretic behavior of the angular dependence of exchange bias for a series of polycrystalline NiFe/(FeMn)_(1-x)(MgO)_(x) bilayers with varying x.For x=0.025,the antiferromagnetic layer is of the largest degree of the fcc(111)preferred texture.At the same x,both the exchange field and blocking temperature acquire maximal values.In particular,the hysteretic behavior of the angular dependence between clockwise and counter-clockwise rotations shows minimal angular shift.These results can be explained in terms of the thermal activation model.展开更多
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or...The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO_(2) and IrO_(2) single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.展开更多
基金Supported by the Innovation Program of Shanghai Municipal Education Commission(No 10ZZ117)the Key Project of the Ministry of Education of China(No 210074).
文摘We investigate the hysteretic behavior of the angular dependence of exchange bias for a series of polycrystalline NiFe/(FeMn)_(1-x)(MgO)_(x) bilayers with varying x.For x=0.025,the antiferromagnetic layer is of the largest degree of the fcc(111)preferred texture.At the same x,both the exchange field and blocking temperature acquire maximal values.In particular,the hysteretic behavior of the angular dependence between clockwise and counter-clockwise rotations shows minimal angular shift.These results can be explained in terms of the thermal activation model.
基金supported by the National Key Research and Development Program of China (2022YFA1403300)the National Natural Science Foundation of China (11974079, 12274083, 12221004, 12174028, 52231007, 51725101, and 11727807)+2 种基金the Shanghai Municipal Science and Technology Major Project (2019SHZDZX01)the Shanghai Municipal Science and Technology Basic Research Project (22JC1400200 and 23dz2260100)the National Key Research and Development Program of China (2021YFA1200600 and 2018YFA0209100)。
文摘The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO_(2) and IrO_(2) single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
