期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
One-phonon resonant electron Raman scattering in multilayer coaxial cylindrical Alx Gal_xAs/GaAs quantum cables*
1
作者 中庆湖 易学华 +1 位作者 卜寿亮 颜玉珍 《Journal of Semiconductors》 EI CAS CSCD 2013年第4期1-6,共6页
We have presented a theoretical calculation of the differential cross section (DCS) for the electron Ra- man scattering (ERS) process associated with the interface optical (IO) and surface optical (SO) phonons... We have presented a theoretical calculation of the differential cross section (DCS) for the electron Ra- man scattering (ERS) process associated with the interface optical (IO) and surface optical (SO) phonons in mul- tilayer coaxial cylindrical AlxGal-xAs/GaAs quantum cables (QC). We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are stud- ied. Singularities are found to be sensitively size-dependent and by varying the size of the QC, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for the QC with different size is presented. The numerical results are also compared with those of experiments. 展开更多
关键词 Raman scattering optical phonon modes quantum cables
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部