Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor.Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin...Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor.Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarizedinjection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagneticelectrode and organic semiconductors.The calculated result of this model shows effects of electrode's spinpolarization, equilibrium value of polarons ratio, interfacial conductance, bulk conductivity of materials and electricalfield.It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibriumvalue of polarons ratio.We also find that large and matched bulk conductivity of organic semiconductor andelectrode, small spin-dependent interfacial conductance, and enough large electrical field are critical factors for increasingspin polarization.展开更多
The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and o...The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.展开更多
Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching h...Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.展开更多
Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and...Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.展开更多
We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragg...We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging （SCD） effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices.展开更多
基金supported by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(No.2020L0609 and No.2020L0556)the Doctoral research funds of Jinzhong University(jzxybsjjxm2019005)the Basic Research Program in Shanxi Province under the Grant No.20210302124345。
基金Supported by the Natural Science Foundation of Shandong Province under Grant No.Y2006A18 the Key Programme of Nature Foundation of Shandong Jianzhu University under Grant No.XZ050102
文摘Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor.Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarizedinjection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagneticelectrode and organic semiconductors.The calculated result of this model shows effects of electrode's spinpolarization, equilibrium value of polarons ratio, interfacial conductance, bulk conductivity of materials and electricalfield.It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibriumvalue of polarons ratio.We also find that large and matched bulk conductivity of organic semiconductor andelectrode, small spin-dependent interfacial conductance, and enough large electrical field are critical factors for increasingspin polarization.
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+4 种基金the Program for New Century Excellent Talents of China under Grant No NCET-10-0541the Scientific Research Foundation for Returned Overseas Chinese Scholars under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.50971080,11174183,and 50901043)the Program for New Century Excellent Talents of China(Grant No.NCET-10-0541)+3 种基金the Scientific Research Foundation for Returned Overseas Chinese Scholars,111 Project(Grant No.B13029)the Natural Science Foundation of Shandong Province,China(Grant No.JQ201201)the Doctorate Foundation of Shandong Province,China(Grant No.BS2013CL042)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.11204164)
文摘Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+3 种基金the 111 Project under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No Y2006A18, and the Key Programme of Natural Foundation of Shandong Jianzhu University under Grant No XZ050102.
文摘We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging （SCD） effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices.
