The unamplified spontaneous emission(SE) is one of the important physical processes of the light–matter interaction in a diode laser in terms of Einstein’s theory. The recent research on a kind of new indium-rich cl...The unamplified spontaneous emission(SE) is one of the important physical processes of the light–matter interaction in a diode laser in terms of Einstein’s theory. The recent research on a kind of new indium-rich cluster(IRC) laser structure did not reveal SE characteristics of the IRC structure, as its unusual quantum confined structure made it difficult to acquire correctly the SE spectra through theoretical simulation or previous experimental techniques. Thus, in this Letter, we firstly established a convenient and effective experimental approach to acquire SE spectra of the IRC structure by the measurement of amplified SEs from dual facets of a single edgeemitting chip with little sample processing. With the proposed method, the special SE spectra due to the IRC effect were observed. Then, the SE formation mechanism and characteristics in the IRC structure were analyzed by comparing the experimental data with theoretical SE spectra using a standard In Ga As/Ga As quantum well with similar material composition. This research provides a useful tool to investigate the SE characteristics of any non-standard diode laser structure and is very meaningful to develop a new type of IRC lasers.展开更多
In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for th...In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.展开更多
基金the National Natural Science Foundation of China(Nos.61376067 and 61474118).
文摘The unamplified spontaneous emission(SE) is one of the important physical processes of the light–matter interaction in a diode laser in terms of Einstein’s theory. The recent research on a kind of new indium-rich cluster(IRC) laser structure did not reveal SE characteristics of the IRC structure, as its unusual quantum confined structure made it difficult to acquire correctly the SE spectra through theoretical simulation or previous experimental techniques. Thus, in this Letter, we firstly established a convenient and effective experimental approach to acquire SE spectra of the IRC structure by the measurement of amplified SEs from dual facets of a single edgeemitting chip with little sample processing. With the proposed method, the special SE spectra due to the IRC effect were observed. Then, the SE formation mechanism and characteristics in the IRC structure were analyzed by comparing the experimental data with theoretical SE spectra using a standard In Ga As/Ga As quantum well with similar material composition. This research provides a useful tool to investigate the SE characteristics of any non-standard diode laser structure and is very meaningful to develop a new type of IRC lasers.
基金supported by the National Natural Science Foundation of China under Grant Nos.61376067 and61474118
文摘In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.
