本文研究基于S3C2440的Windows CE 5.0嵌入式系统计算机与单片机的串口通信问题。板级支持包(Board Support Package,BSP)提供硬件设备支持。开发BSP在整个产品开发周期上占相当大的比重,在激烈的市场竞争环境中及时移植满足产品要求的...本文研究基于S3C2440的Windows CE 5.0嵌入式系统计算机与单片机的串口通信问题。板级支持包(Board Support Package,BSP)提供硬件设备支持。开发BSP在整个产品开发周期上占相当大的比重,在激烈的市场竞争环境中及时移植满足产品要求的BSP是非常重要的。在Windows CE 5.0嵌入式系统中,微处理器和操作系统的基础是进行应用开发。展开更多
Interdigitated back contact（IBC） solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrys...Interdigitated back contact（IBC） solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.展开更多
文摘本文研究基于S3C2440的Windows CE 5.0嵌入式系统计算机与单片机的串口通信问题。板级支持包(Board Support Package,BSP)提供硬件设备支持。开发BSP在整个产品开发周期上占相当大的比重,在激烈的市场竞争环境中及时移植满足产品要求的BSP是非常重要的。在Windows CE 5.0嵌入式系统中,微处理器和操作系统的基础是进行应用开发。
基金supported by the National Natural Science Foundation of China(Grant Nos.11104319,11274346,51202285,61234005,51172268,51602340,61274059,and 51402347)the Solar Energy Action Plan of Chinese Academy of Sciences(Grant Nos.Y1YT064001,Y1YF034001,and Y2YF014001)+2 种基金the Graduate and College Student’s Innovative Project(Grant No.YC2016-X19)the Project of Beijing Municipal Science and Technology Commission(Grant No.Z151100003515003)the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences
文摘Interdigitated back contact（IBC） solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.
