Based on the transport equation of the semiconductor device model for 0.524 e V Ge Sn alloy and the experimental parameters of the material,the thermal-electricity conversion performance governed by a Ge Sn diode has ...Based on the transport equation of the semiconductor device model for 0.524 e V Ge Sn alloy and the experimental parameters of the material,the thermal-electricity conversion performance governed by a Ge Sn diode has been systematically studied in its normal and inverted structures.For the normal p^(+)/n(n^(+)/p)structure,it is demonstrated here that an optimal base doping N_(d(a))=3(7)×10^(18)cm^(-3) is observed,and the superior p^(+)/n structure can achieve a higher performance.To reduce material consumption,an economical active layer can comprise a 100 nm-300 nm emitter and a 3μm-6μm base to attain comparable performance to that for the optimal configuration.Our results offer many useful guidelines for the fabrication of economical Ge Sn thermophotovoltaic devices.展开更多
基金Project supported by the Beijing Natural Science Foundation Program,China(Grant No.4192016)。
文摘Based on the transport equation of the semiconductor device model for 0.524 e V Ge Sn alloy and the experimental parameters of the material,the thermal-electricity conversion performance governed by a Ge Sn diode has been systematically studied in its normal and inverted structures.For the normal p^(+)/n(n^(+)/p)structure,it is demonstrated here that an optimal base doping N_(d(a))=3(7)×10^(18)cm^(-3) is observed,and the superior p^(+)/n structure can achieve a higher performance.To reduce material consumption,an economical active layer can comprise a 100 nm-300 nm emitter and a 3μm-6μm base to attain comparable performance to that for the optimal configuration.Our results offer many useful guidelines for the fabrication of economical Ge Sn thermophotovoltaic devices.
