High quality Si_(1-x-y)Ge_(x)C_(y) alloy with 2.2%C is grown at a relatively high temperature(760℃)on Si(100)using ultra-high vacuum/chemical vapor deposition(UHV/CVD)system.The samples are investigated with high res...High quality Si_(1-x-y)Ge_(x)C_(y) alloy with 2.2%C is grown at a relatively high temperature(760℃)on Si(100)using ultra-high vacuum/chemical vapor deposition(UHV/CVD)system.The samples are investigated with high resolution cross-sectioned transmission electron microscope and x-ray diffraction.Compared with Si_(1-x)Ge_(x) alloys,Si_(1-x-y)Ge_(x)C_(y) alloys with small amounts of Chave much less strain and larger critical layer thickness.The quality of interface is edso improved.Relatively flat growing profiles of the film are confirmed by secondary ion mass spectroscopy.Fourier transform infrared spectroscopy is also used to testify that the carbon atoms are on the substitutional sites.It is proved that the UHV/CVD system is an efficient method of growing Si_(1-x-y)Ge_(x)C_(y) alloys.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69686002.
文摘High quality Si_(1-x-y)Ge_(x)C_(y) alloy with 2.2%C is grown at a relatively high temperature(760℃)on Si(100)using ultra-high vacuum/chemical vapor deposition(UHV/CVD)system.The samples are investigated with high resolution cross-sectioned transmission electron microscope and x-ray diffraction.Compared with Si_(1-x)Ge_(x) alloys,Si_(1-x-y)Ge_(x)C_(y) alloys with small amounts of Chave much less strain and larger critical layer thickness.The quality of interface is edso improved.Relatively flat growing profiles of the film are confirmed by secondary ion mass spectroscopy.Fourier transform infrared spectroscopy is also used to testify that the carbon atoms are on the substitutional sites.It is proved that the UHV/CVD system is an efficient method of growing Si_(1-x-y)Ge_(x)C_(y) alloys.
