We study the growth of an InGaN and A1GaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition （MOCVD）. It is found that the crystal quality of the InGaN back barrier layer signif...We study the growth of an InGaN and A1GaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition （MOCVD）. It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the A1GaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the A1GaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double het- erojunetion high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at VDS = 10 V.展开更多
基金Project supported by the Major Program and Key Project of National Natural Science Foundation of China(Nos.60890191,60736033)the National Key S&T Special Project(No.2008ZX01002)
文摘We study the growth of an InGaN and A1GaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition （MOCVD）. It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the A1GaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the A1GaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double het- erojunetion high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at VDS = 10 V.
