利用新型铁电材料Na 0.5 Y 0.5 TiO 3(NYTO)薄膜高介电的特点,将其作为MFIS(metal-ferroelectric-insulator-semiconductor,MFIS)电容器的绝缘层,制备出Pt/Pb(Zr 0.2 Ti 0.8)O 3/NYTO/Si结构电容器,并对其进行XRD、SEM、C-V特性测试及I-...利用新型铁电材料Na 0.5 Y 0.5 TiO 3(NYTO)薄膜高介电的特点,将其作为MFIS(metal-ferroelectric-insulator-semiconductor,MFIS)电容器的绝缘层,制备出Pt/Pb(Zr 0.2 Ti 0.8)O 3/NYTO/Si结构电容器,并对其进行XRD、SEM、C-V特性测试及I-V特性测试分析.分别对C-V存储窗口(记忆窗口,memory window)与应用电压以及绝缘层膜厚的关系进行了研究,结果表明记忆窗口数值比较理想.绝缘层厚度为40 nm、电容器的应用电压为32 V时,记忆窗口可达13 V.对制备的MFIS电容器I-V特性进行了研究,结果表明器件具备较低的漏电流密度,为1.08×10-6 A/cm 2,且其电流传导机制符合空间电荷限制电流导电机制.展开更多
Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide...Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces,the development of oxide transistors may be able to perform.We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor,p-type colossal magnetoresistance manganite,and a ferroelectric barrier(i).From this,bipolar transistors were fabricated at the back-to-back p-i-n junctions,for which the Schottky emission and p-n junction barriers,as well as the ferroelectric polarization,were integrated into the interfaces to control the transport properties;a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed.These results present a real possibility to date for developing bipolar all perovskite oxide transistors.展开更多
A series of Y1_xPO4：xTb3＋ （x=0.005-0.1） phosphors were successfully fabricated by using co-precipitation method with NHzH2PO4 as phosphorus source. The structure and morphology characterization of the luminescent ...A series of Y1_xPO4：xTb3＋ （x=0.005-0.1） phosphors were successfully fabricated by using co-precipitation method with NHzH2PO4 as phosphorus source. The structure and morphology characterization of the luminescent material was investigated with X-ray powder diffraction （XRD） and field emission scanning electron microscopy （FESEM）. The XRD patterns indicated that the samples belonged to tetragonal phase. Luminescence properties were discussed by measuring the excitation and emission spectra. The phosphor could be excited by UV light （340-390 nm） and emitted green light, with the emission peaks located at 491 （5Da→7F6）, 550 （SD4→7Fs）, 589 （5D4→7F4） and 624 nm （SD4→TF3）. In addition, the pH value and activator concentration had great effects on the emission intensity. The results illuminated that this phosphor could be used for UV based white light emitting diodes and co-precipitation method could be used to prepare better appearance phosphor.展开更多
基金Supported by the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No KJCX2YW-W16the National Basic Research Program of China(2010CB630700)the National Natural Science Foundation of China(10904116).
文摘Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces,the development of oxide transistors may be able to perform.We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor,p-type colossal magnetoresistance manganite,and a ferroelectric barrier(i).From this,bipolar transistors were fabricated at the back-to-back p-i-n junctions,for which the Schottky emission and p-n junction barriers,as well as the ferroelectric polarization,were integrated into the interfaces to control the transport properties;a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed.These results present a real possibility to date for developing bipolar all perovskite oxide transistors.
基金Project supported by the National Science Foundation of China(61205180)National Science Foundation for Distinguished Young Scholars of China(61125505)Natural Science Foundation of Hebei Province(E2012201087)
文摘A series of Y1_xPO4：xTb3＋ （x=0.005-0.1） phosphors were successfully fabricated by using co-precipitation method with NHzH2PO4 as phosphorus source. The structure and morphology characterization of the luminescent material was investigated with X-ray powder diffraction （XRD） and field emission scanning electron microscopy （FESEM）. The XRD patterns indicated that the samples belonged to tetragonal phase. Luminescence properties were discussed by measuring the excitation and emission spectra. The phosphor could be excited by UV light （340-390 nm） and emitted green light, with the emission peaks located at 491 （5Da→7F6）, 550 （SD4→7Fs）, 589 （5D4→7F4） and 624 nm （SD4→TF3）. In addition, the pH value and activator concentration had great effects on the emission intensity. The results illuminated that this phosphor could be used for UV based white light emitting diodes and co-precipitation method could be used to prepare better appearance phosphor.
