The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promisi...The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promising candidate for realizing excitonic condensation.Here,we studied the band gap in 1T-TiSe_(2) using angle-resolved photoemission spectroscopy(ARPES).Instead of only focusing on the in-plane band dispersions,we obtained the detailed band dispersions of both conduction and valance bands along the out-of-plane direction.We found that the conduction and valance bands split into multiple sub-bands in the CDW state due to band folding.As a result,the band gap between the Ti d-bands and Se p-bands reduces to~25 meV and becomes a direct gap in the CDW state.More intriguingly,such band gap can be further reduced by the rubidium deposition.The band structure becomes semimetallic in the rubidium-doped sample.Meanwhile,exotic gapless behaviors were observed at the p-d band crossing.Our result characterized the band gap of 1T-TiSe_(2) in three-dimensional Brillouin zone with unpreceded precision.It also suggests a closing of band gap or a potential band inversion in 1T-TiSe_(2) driven by rubidium deposition.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2022YFA1403502 and 2018YFA0305602)the National Natural Science Foundation of China (Grant No.11888101)SSRF is supported by ME2 project under contract No.11227901 from the National Natural Science Foundation of China。
文摘The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promising candidate for realizing excitonic condensation.Here,we studied the band gap in 1T-TiSe_(2) using angle-resolved photoemission spectroscopy(ARPES).Instead of only focusing on the in-plane band dispersions,we obtained the detailed band dispersions of both conduction and valance bands along the out-of-plane direction.We found that the conduction and valance bands split into multiple sub-bands in the CDW state due to band folding.As a result,the band gap between the Ti d-bands and Se p-bands reduces to~25 meV and becomes a direct gap in the CDW state.More intriguingly,such band gap can be further reduced by the rubidium deposition.The band structure becomes semimetallic in the rubidium-doped sample.Meanwhile,exotic gapless behaviors were observed at the p-d band crossing.Our result characterized the band gap of 1T-TiSe_(2) in three-dimensional Brillouin zone with unpreceded precision.It also suggests a closing of band gap or a potential band inversion in 1T-TiSe_(2) driven by rubidium deposition.