基于线型腔结构实现中心波长约1 945 nm、功率150 m W的连续激光输出,采用3级主振荡功率放大(master oscillator power amplifier,MOPA)结构,实现123 W的掺铥激光输出,斜率效率为59.1%.搭建基于调制半导体激光器,输出波长为1 550 nm的...基于线型腔结构实现中心波长约1 945 nm、功率150 m W的连续激光输出,采用3级主振荡功率放大(master oscillator power amplifier,MOPA)结构,实现123 W的掺铥激光输出,斜率效率为59.1%.搭建基于调制半导体激光器,输出波长为1 550 nm的铒镱共掺光纤放大器,实现平均功率1.2 W、脉宽50 ns、重复频率200 k Hz的脉冲激光输出.将该铒镱共掺光纤放大器作为泵浦源,采用线型腔结构抽运掺铥光纤,实现中心波长约为1 945 nm的增益调制脉冲激光输出,重复频率为100 k Hz,脉宽约为800ns.采用3级MOPA结构对此增益调制掺铥脉冲光纤激光器进行功率放大,实现平均功率115 W、单脉冲能量1.15 m J的激光输出,且放大过程中无非线性效应产生.展开更多
报道了一种结构简单紧凑的输出波长为1487 nm的三阶斯托克斯调Q锁模(Simultaneously Q-switched and mode-locked(QML))自拉曼固体激光器。采用光纤耦合输出的大功率半导体激光器单端泵浦掺Nd原子浓度为0.3 at.%的Nd∶YVO4复合晶体,在...报道了一种结构简单紧凑的输出波长为1487 nm的三阶斯托克斯调Q锁模(Simultaneously Q-switched and mode-locked(QML))自拉曼固体激光器。采用光纤耦合输出的大功率半导体激光器单端泵浦掺Nd原子浓度为0.3 at.%的Nd∶YVO4复合晶体,在重复频率(pulse repetition rate(PRF))为25 k Hz,泵浦功率为24 W时,输出的波长为1487 nm,获得的最大平均输出功率为588 m W,锁模脉宽为21.09 ps,单脉冲能量为8.23μJ,峰值功率达到390 k W。展开更多
We present a high power diode-pumped continuous-wave Tm： YLF （Tm^3＋-doped lithium yttrium fluoride） laser with a piece of silicon wafer as the output coupler （Si-OC laser） directly. Under the pump power of 40 W ...We present a high power diode-pumped continuous-wave Tm： YLF （Tm^3＋-doped lithium yttrium fluoride） laser with a piece of silicon wafer as the output coupler （Si-OC laser） directly. Under the pump power of 40 W at 793 nm, a maximum output power of 12.1 W is obtained with a beam quality of M2 ≤ 1.55 at 1887nm, corresponding to an optical-to-optical effciency of 30.25% and a slope efficiency of 33.21%. To the best of our knowledge, this is the first report on directly utilizing silicon as an output coupler （Si-OC） in the solid Tm：YLF laser system. Due to the intriguing characteristics of silicon, such as negligible absorption in the wavelength region around 2 μm, high damage threshold, low cost and long-pass filter properties, double-side polished monocrystalline silicon wafer is considered as an outstanding candidate output coupler in the high-power laser system 2 μm spectral region, which may dramatically reduce the total manufacturing costs of the 2 9m laser system.展开更多
Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet ...Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of ~0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in Al N presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.展开更多
文摘报道一种室温下连续运转、结构紧凑、高效率、高功率L型折叠腔掺铥固体激光器.采用793 nm波长半导体二极管激光器对掺杂摩尔分数3%的Tm∶YAP晶体进行双端泵浦,当泵浦功率120 W时,获得42 W中心波长1 988 nm的连续输出激光.声光调Q运转时,在重复频率10 k Hz,泵浦功率120W时,平均输出功率达到39.4 W,脉宽247.5 ns,单脉冲能量3.94 m J,峰值功率16 k W,斜率效率为35%.
文摘基于线型腔结构实现中心波长约1 945 nm、功率150 m W的连续激光输出,采用3级主振荡功率放大(master oscillator power amplifier,MOPA)结构,实现123 W的掺铥激光输出,斜率效率为59.1%.搭建基于调制半导体激光器,输出波长为1 550 nm的铒镱共掺光纤放大器,实现平均功率1.2 W、脉宽50 ns、重复频率200 k Hz的脉冲激光输出.将该铒镱共掺光纤放大器作为泵浦源,采用线型腔结构抽运掺铥光纤,实现中心波长约为1 945 nm的增益调制脉冲激光输出,重复频率为100 k Hz,脉宽约为800ns.采用3级MOPA结构对此增益调制掺铥脉冲光纤激光器进行功率放大,实现平均功率115 W、单脉冲能量1.15 m J的激光输出,且放大过程中无非线性效应产生.
基金supported by the National Nature Science Foundation of China(11074172)the Key Important Project of the Basic Research Program of Shenzhen(JC200903130326A)~~
文摘报道了一种结构简单紧凑的输出波长为1487 nm的三阶斯托克斯调Q锁模(Simultaneously Q-switched and mode-locked(QML))自拉曼固体激光器。采用光纤耦合输出的大功率半导体激光器单端泵浦掺Nd原子浓度为0.3 at.%的Nd∶YVO4复合晶体,在重复频率(pulse repetition rate(PRF))为25 k Hz,泵浦功率为24 W时,输出的波长为1487 nm,获得的最大平均输出功率为588 m W,锁模脉宽为21.09 ps,单脉冲能量为8.23μJ,峰值功率达到390 k W。
文摘报道一种结构简单紧凑的二阶Stokes自拉曼调Q锁模固体激光器.采用光纤耦合输出的大功率激光二极管,单端泵浦掺Nd原子数分数为0.3%的Nd∶YVO_4晶体,在重复频率为20 k Hz,泵浦功率为22 W时,得到波长为1 764 nm、平均功率为0.215 W、锁模脉宽为12 ps及单脉冲能量为5.44μJ的激光输出,其峰值功率达到453 k W.
基金Supported by the Science and Technology Project of Shenzhen under Grant Nos JCYJ20140509172609175 and JSGG20140519104809878the Science and Technology Project of Guangdong Province under Grant No 2014B010131006
文摘We present a high power diode-pumped continuous-wave Tm： YLF （Tm^3＋-doped lithium yttrium fluoride） laser with a piece of silicon wafer as the output coupler （Si-OC laser） directly. Under the pump power of 40 W at 793 nm, a maximum output power of 12.1 W is obtained with a beam quality of M2 ≤ 1.55 at 1887nm, corresponding to an optical-to-optical effciency of 30.25% and a slope efficiency of 33.21%. To the best of our knowledge, this is the first report on directly utilizing silicon as an output coupler （Si-OC） in the solid Tm：YLF laser system. Due to the intriguing characteristics of silicon, such as negligible absorption in the wavelength region around 2 μm, high damage threshold, low cost and long-pass filter properties, double-side polished monocrystalline silicon wafer is considered as an outstanding candidate output coupler in the high-power laser system 2 μm spectral region, which may dramatically reduce the total manufacturing costs of the 2 9m laser system.
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.61575129 and 11447029)the Science&Technology Innovation Committee Foundation of Shenzhen(No.JCYJ20160328144942069)
文摘Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of ~0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in Al N presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.
