The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realiz...The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.展开更多
基金This work was supported by the National Key Research and Development Program of China(Nos.2017YFE0131300 and 2019YFB1803901)National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,12074400,11705262,and 11905282)+7 种基金Frontier Science Key Program of Chinese Academy of Sciences(No.QYZDY-SSW-JSC032)Shanghai Key Basic Research Program(No.20JC1416200)Program of Shanghai Academic Research Leader(Nos.9XD1404600 and 19XD1404600)Shanghai Rising-Star Program(No.19QA1410600)Shanghai Sailing Program(No.18YF1428100)Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX03)Strategic Priority Research Program of Chinese Academy of Sci-ences(Nos.XDB24020400 and XDB0000000)Science and Technology Comission of Shanghai Municipality(No.16ZR1442600).
文摘The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l platform.The cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength range.Moreover,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
