The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug effi...The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.展开更多
基金supported by the National Natural Science Foundation of China(No.61905236)the University of Science and Technology of China(No.KY2100000081)+2 种基金the Chinese Academy of Sciences(No.KJ2100230003)the Fundamental Research Funds for the Central Universities(No.WK2100230020)the USTC Research Funds of the Double First-Class Initiative(No.YD3480002002)。
文摘The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.
