GaInP is an important material in fabrication of optoelectronic and microwave devices. Growth process of GaInP by MOCVD (metal-organic chemical vapor deposition) was investigated, and the effect of growth parameters o...GaInP is an important material in fabrication of optoelectronic and microwave devices. Growth process of GaInP by MOCVD (metal-organic chemical vapor deposition) was investigated, and the effect of growth parameters on the epilayer properties was discussed. It is found that the distribution coefficient of indium is close to unity, while the growth temperature of GaInP is 700°C. The background concentration at 300K is 5.34×1015cm-3 and Hall mobility is 2.27×103cm2·V-1·S-1.展开更多
Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acc...Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.展开更多
基金Supported by the National Natural Science Foundation of China(50772110,50721091)Fundamental Research Funds for the Central Universities(WK2030000004)
文摘GaInP is an important material in fabrication of optoelectronic and microwave devices. Growth process of GaInP by MOCVD (metal-organic chemical vapor deposition) was investigated, and the effect of growth parameters on the epilayer properties was discussed. It is found that the distribution coefficient of indium is close to unity, while the growth temperature of GaInP is 700°C. The background concentration at 300K is 5.34×1015cm-3 and Hall mobility is 2.27×103cm2·V-1·S-1.
基金by the Natural Science Foundation of Anhui Province under Grant Nos 070414184 and 070412034.
文摘Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.
