We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the de...We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the degreeof spin-polarization strongly depends on the transverse wave-vector and the temperature.These interesting propertiesmay be helpful to spin-polarize electrons into semiconductors,and this device may be used as a spin filter.展开更多
This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantit...This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.展开更多
基金Supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process (Wuhan University of Science and Technology) under Grant No.C201018 the National Natural Science Foundation of China under Grant No.10805035
文摘We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the degreeof spin-polarization strongly depends on the transverse wave-vector and the temperature.These interesting propertiesmay be helpful to spin-polarize electrons into semiconductors,and this device may be used as a spin filter.
文摘This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.
