Nonreciprocal effects are consistently observed in noncentrosymmetric materials due to the intrinsic symmetry breaking and in high-conductivity systems due to the extrinsic thermoelectric effect. Meanwhile, nonrecipro...Nonreciprocal effects are consistently observed in noncentrosymmetric materials due to the intrinsic symmetry breaking and in high-conductivity systems due to the extrinsic thermoelectric effect. Meanwhile, nonreciprocal charge transport is widely utilized as an effective experimental technique for detecting intrinsic unidirectional electrical contributions. Here, we show an unconventional nonreciprocal voltage transition in topological insulator Ag_(2)Te nanobelts. The nonreciprocal voltage develops from nearly zero to giant values under the applied current I_(ac) and external magnetic fields, while remaining unchanged under various current I_(dc). This unidirectional electrical contribution is further evidenced by the differential resistance(dV/dI) measurements. Furthermore, the transition possesses two-dimensional properties under a tilted magnetic field and occurs when the voltage between two electrodes exceeds a certain value. We propose a possible mechanism based on the development of edge channels in Ag_(2)Te nanobelts to interpret the phenomenon. Our results not only introduce a peculiar nonreciprocal voltage transition in topological materials but also enrich the understanding of the intrinsic mechanism that strongly affects nonreciprocal charge transport.展开更多
Topological insulators＇ properties and their potential device applications are reviewed. We also explain why topologi- cal insulator （TI） nanostructnres are an important avenue for research and discuss some methods...Topological insulators＇ properties and their potential device applications are reviewed. We also explain why topologi- cal insulator （TI） nanostructnres are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to ex- ploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.展开更多
Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far, extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both hig...Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far, extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both high electrical conductivity and low thermal conductivity. Recently, the emerging Dirac semimetal Cd3As2, a three-dimensional analogue of graphene, has been reported to host ultra-high mobility and good electrical conductivity as metals. Here, we report the observation of unexpected low thermal conductivity in Cd3As2, one order of magnitude lower than the conventional metals or semimetals with a similar electrical conductivity, despite the semimetal band structure and high electron mobility. The power factor also reaches a large value of 1.58 mW.m 1 .K-2 at room temperature and remains non-saturated up to 400 K. Corroborating with the first-principles calculations, we find that the thermoelectric performance can be well-modulated by the carrier concentration in a wide range. This work demonstrates the Dirac semimetal Cd3As2 as a potential candidate of thermoelectric materials.展开更多
Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted ...Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.展开更多
Recently, modifications of charge density wave（CDW） in two-dimensional（2D） show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides（TMDCs）. Optical, electrical transport ...Recently, modifications of charge density wave（CDW） in two-dimensional（2D） show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides（TMDCs）. Optical, electrical transport measurements and scanning tunneling microscopy uncover the enormous difference on the many-body states when the thickness is reduced down to monolayer. However, the CDW in quasi-one-dimensional（1D） materials like transition metal trichalcogenides（TMTCs） is yet to be explored in low dimension whose mechanism is likely distinct from their quasi-2D counterparts.Here, we report a systematic study on the CDW properties of titanium trisulfide（TiS3）. Two phase transition temperatures were observed to decrease from 53 K（103 K） to 46 K（85 K） for the bulk and 〈 15-nm thick nanoribbon, respectively,which arises from the increased fluctuation effect across the chain in the nanoribbon structure, thereby destroying the CDW coherence. It also suggests a strong anisotropy of CDW states in quasi-1D TMTCs which is different from that in TMDCs.Remarkably, by using back gate of-30 V ～ 70 V in 15-nm device, we can tune the second transition temperature from110 K（at-30 V） to 93 K（at 70 V） owing to the altered electron concentration. Finally, the optical approach through the impinging of laser beams on the sample surface is exploited to manipulate the CDW transition, where the melting of the CDW states shows a strong dependence on the excitation energy. Our results demonstrate TiS3 as a promising quasi-1D CDW material and open up a new window for the study of collective phases in TMTCs.展开更多
We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We o...We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance （Rxy） at high pulsed fields up to 60 T. Due to the strong 2D confine- ment and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin-orbit interaction in the SrMnSb2 system.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 52225207, 11934005, and 52350001)the Shanghai Pilot Program for Basic Research-FuDan University21TQ1400100 (Grant No. 21TQ006)the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01)。
文摘Nonreciprocal effects are consistently observed in noncentrosymmetric materials due to the intrinsic symmetry breaking and in high-conductivity systems due to the extrinsic thermoelectric effect. Meanwhile, nonreciprocal charge transport is widely utilized as an effective experimental technique for detecting intrinsic unidirectional electrical contributions. Here, we show an unconventional nonreciprocal voltage transition in topological insulator Ag_(2)Te nanobelts. The nonreciprocal voltage develops from nearly zero to giant values under the applied current I_(ac) and external magnetic fields, while remaining unchanged under various current I_(dc). This unidirectional electrical contribution is further evidenced by the differential resistance(dV/dI) measurements. Furthermore, the transition possesses two-dimensional properties under a tilted magnetic field and occurs when the voltage between two electrodes exceeds a certain value. We propose a possible mechanism based on the development of edge channels in Ag_(2)Te nanobelts to interpret the phenomenon. Our results not only introduce a peculiar nonreciprocal voltage transition in topological materials but also enrich the understanding of the intrinsic mechanism that strongly affects nonreciprocal charge transport.
基金supported by the National Young 1000 Talents Plan of Chinathe Pu Jiang Talent Plan in Shanghai City, China
文摘Topological insulators＇ properties and their potential device applications are reviewed. We also explain why topologi- cal insulator （TI） nanostructnres are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to ex- ploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.
基金supported by the National Young 1000 Talent Plan Chinathe Pujiang Talent Plan in Shanghai,China+2 种基金the National Natural Science Foundation of China(Grant Nos.61322407 and 11474058)the Fund for Fostering Talents in Basic Science of the National Natural Science Foundation of China(Grant No.J1103204)the National Basic Research Program of China(Grant No.2011CB921803)
文摘Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far, extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both high electrical conductivity and low thermal conductivity. Recently, the emerging Dirac semimetal Cd3As2, a three-dimensional analogue of graphene, has been reported to host ultra-high mobility and good electrical conductivity as metals. Here, we report the observation of unexpected low thermal conductivity in Cd3As2, one order of magnitude lower than the conventional metals or semimetals with a similar electrical conductivity, despite the semimetal band structure and high electron mobility. The power factor also reaches a large value of 1.58 mW.m 1 .K-2 at room temperature and remains non-saturated up to 400 K. Corroborating with the first-principles calculations, we find that the thermoelectric performance can be well-modulated by the carrier concentration in a wide range. This work demonstrates the Dirac semimetal Cd3As2 as a potential candidate of thermoelectric materials.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0303302 and 2018YFA0305601)the National Natural Science Foundation of China(Grant Nos.61322407,11474058,61674040,and 11874116)
文摘Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.
基金Project supported by the National Young 1000-Talent Planthe National Natural Science Foundation of China(Grant Nos.61322407,11474058,and61674040)
文摘Recently, modifications of charge density wave（CDW） in two-dimensional（2D） show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides（TMDCs）. Optical, electrical transport measurements and scanning tunneling microscopy uncover the enormous difference on the many-body states when the thickness is reduced down to monolayer. However, the CDW in quasi-one-dimensional（1D） materials like transition metal trichalcogenides（TMTCs） is yet to be explored in low dimension whose mechanism is likely distinct from their quasi-2D counterparts.Here, we report a systematic study on the CDW properties of titanium trisulfide（TiS3）. Two phase transition temperatures were observed to decrease from 53 K（103 K） to 46 K（85 K） for the bulk and 〈 15-nm thick nanoribbon, respectively,which arises from the increased fluctuation effect across the chain in the nanoribbon structure, thereby destroying the CDW coherence. It also suggests a strong anisotropy of CDW states in quasi-1D TMTCs which is different from that in TMDCs.Remarkably, by using back gate of-30 V ～ 70 V in 15-nm device, we can tune the second transition temperature from110 K（at-30 V） to 93 K（at 70 V） owing to the altered electron concentration. Finally, the optical approach through the impinging of laser beams on the sample surface is exploited to manipulate the CDW transition, where the melting of the CDW states shows a strong dependence on the excitation energy. Our results demonstrate TiS3 as a promising quasi-1D CDW material and open up a new window for the study of collective phases in TMTCs.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0303302)the National Natural Science Foundation of China(Grant Nos.61322407,11474058,and 61674040)
文摘We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance （Rxy） at high pulsed fields up to 60 T. Due to the strong 2D confine- ment and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin-orbit interaction in the SrMnSb2 system.
基金supported by the National Key Research and Development Program of China (2017YFA0303302, 2018YFA030560 and 2017YFA0303301)the National Natural Science Foundation of China (11934005, 11474058, 11874116, 11674028 and 11534001)+9 种基金the National Natural Science Foundation of China (U1932154)the Science and Technology Commission of Shanghai (19511120500)the Shanghai Municipal Science and Technology Major Project (2019SHZDZX01)the Program of Shanghai Academic/Technology Research Leader (20XD1400200)supported by National Science Foundation Cooperative Agreement No. DMR-1644779, No. DMR-1157490the State of Floridasupport from China Postdoctoral Innovative Talents Support Program (BX20190085)China Postdoctoral Science Foundation (2019 M661331)supported by the Scientific Instrument Developing Project of CAS (YJKYYQ20180059)the Youth Innovation Promotion Association CAS (2018486)。
