1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部...1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部之间传输的光信号。实验测试表明,输入到ADL5304的光信号平均功率≥-60d Bm时,OLP本端模块能够准确获知对端模块发送的协议指令信息。该方案可以简化电路设计、降低生产成本、提高OLP系统的稳定性。展开更多
A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order: substrate is on the window side and the dist...A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order: substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 #m, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed.展开更多
文摘1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部之间传输的光信号。实验测试表明,输入到ADL5304的光信号平均功率≥-60d Bm时,OLP本端模块能够准确获知对端模块发送的协议指令信息。该方案可以简化电路设计、降低生产成本、提高OLP系统的稳定性。
文摘A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order: substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 #m, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed.