1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部...1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部之间传输的光信号。实验测试表明,输入到ADL5304的光信号平均功率≥-60d Bm时,OLP本端模块能够准确获知对端模块发送的协议指令信息。该方案可以简化电路设计、降低生产成本、提高OLP系统的稳定性。展开更多
A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order： substrate is on the window side and the dist...A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order： substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 #m, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed.展开更多
文摘1∶1类型的光线路保护(Optical Line Protection,OLP)系统,不仅要检测光功率,还要解调携带同步切换协议信息的光信号,否则将无法实现同步切换。设计1∶1类型OLP系统,使用ADL5304对数转换器,能够在实时监测光功率的同时,解调OLP模块内部之间传输的光信号。实验测试表明,输入到ADL5304的光信号平均功率≥-60d Bm时,OLP本端模块能够准确获知对端模块发送的协议指令信息。该方案可以简化电路设计、降低生产成本、提高OLP系统的稳定性。
文摘A high power and good beam quality InGaAs/GaAs quantum well semiconductor disk laser at 1 015 nm wavelength is reported. The semiconductor wafer is grown in reverse order： substrate is on the window side and the distributed Bragg reflector is the last grown epilayer. Then the wafer is up-side-down and capillary bonded to a SiC heatsink, and the substrate is chemically etched. Because the total thickness of the substrate-removed structure is less than 10 #m, the thermal management of the laser is significantly improved, and the maximum output power over 0.6 W is obtained using a 3% output coupler and 3.2 W incident pump power. The M2 factors of 1.02 and 1.01 indicate a near-diffraction-limited beam quality. To further reveal the characteristics of this substrate-etched structure on the thermal management, the heat flux and the temperature distribution of the gain wafer are numerically analyzed, and the corresponding results are discussed.
