Chemical disorder on the surface and lattice strain in GaN implanted by Fe^(10+)ions are investigated.In this study,3-MeV Fe^(10+)ions fluence ranges from 1×10^(13)ions/cm^(2)to 5×10^(15)ions/cm^(2)at room t...Chemical disorder on the surface and lattice strain in GaN implanted by Fe^(10+)ions are investigated.In this study,3-MeV Fe^(10+)ions fluence ranges from 1×10^(13)ions/cm^(2)to 5×10^(15)ions/cm^(2)at room temperature.X-ray photoelectron spectroscopy,high-resolution x-ray diffraction,and high-resolution transmission electron microscopy were used to characterize lattice disorder.The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering.The change of tensile strain out-of-plane with fluence was measured.Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12075194)the Fund of Collage Student Innovation and Entrepreneurship Training Program(Grant No.S202010619053)。
文摘Chemical disorder on the surface and lattice strain in GaN implanted by Fe^(10+)ions are investigated.In this study,3-MeV Fe^(10+)ions fluence ranges from 1×10^(13)ions/cm^(2)to 5×10^(15)ions/cm^(2)at room temperature.X-ray photoelectron spectroscopy,high-resolution x-ray diffraction,and high-resolution transmission electron microscopy were used to characterize lattice disorder.The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering.The change of tensile strain out-of-plane with fluence was measured.Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.
