Wafer-scale 30°twisted bilayer graphene epitaxially grown on Cu_(0.75)Ni_(0.25)(111)

Twisted bilayer graphene(TBG) has been extensively studied because of its novel physical properties and potential application in electronic devices.Here we report the synthesis and characterization of 300 TBG naturally grown on Cu_(0.75)Ni_(0.25)(111) film and investigate the electronic structure by angle-resolved photoemission spectroscopy.Compared with other substrates,our TBG with a wafer scale is acquired with a shorter growth time.The Fermi velocity and energy gap of Dirac cones of TBG are comparable with those of a monolayer on Cu_(0.85)Ni_(0.15)(111).The signature of moré lattices has not been observed in either the low-energy electron diffraction patterns or the Fermi surface map within experimental resolution,possibly due to different Cu and Ni contents in the substrates enhancing the different couplings between the substrate and the first/second layers and hindering the formation of a quasiperiodic structure.

Photoemission study of iron-based superconductor

The iron-based superconductivity （IBSC） is a great challenge in correlated system. Angle-resolved photoemission spectroscopy （ARPES） provides electronic structure of the IBSCs, the pairing strength, and the order parameter symmetry. Here, we briefly review the recent progress in IBSCs and focus on the results from ARPES. The ARPES study shows the electronic structure of ＂122＂, ＂111＂, ＂11＂, and ＂122＂＂ families of IBSCs. It has been agreed that the IBSCs are unconventional superconductors in strong coupling region. The order parameter symmetry basically follows s form with considerable out-of-plane contribution.

Electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film

Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices.For epitaxially grown graphene,the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies.Utilizing angle-resolved photoemission spectroscopy,here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111)alloy film by chemical vapor deposition.With a relatively low growth temperature,graphene on Cu/Ni(111)exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111).The linear dispersions forming Dirac cone are as wide as 2 e V,with the Fermi velocity of approximately 1.1×10^6 m/s.Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV.Our findings would promote the study of engineering of graphene on different substrate materials.

Growth of high-quality perovskite (110)-SrIrO_3 thin films using reactive molecular beam epitaxy

Recently, 5d transition metal iridates have been reported as promising materials for the manttfacture of exotic quan- tum states. Apart from the semimetallic ground states that have been observed, perovskite SrlrO3 is also predicted to have a lattice-symmetrically protected topological state in the （110） plane due to its strong： spin-orbil coupling and electron correlation. Compared with non-polar （001）-SflrO3, the especial polarity of （110）-SrIrC）3 undoubtedly adds the： difficulty of fabrication and largely impedes the research on its surface states. Here, we have successfully synthesized high-quality （110）-SflrO3 thin films on （110）-SrTiO3 substrates by reactive molecular beam epitaxy fi^r the first time. Both reflec- tion high-energy electron diffraction pattems and x-ray diffraction measurements suggest the expected orientation and outstanding crystallinity. A （1 × 2） surface reconstruction driven from the surface instabiJity, the. same as that reported in （110）-SrTiO3, is observed. The electric transport measurements uncover that （110）-SrIrO3 exhibits a more prominent semimetallic property in comparison to （001）-SrIrO3.

Quantization of the band at the surface of charge density wave material 2H-TaSe_(2)

By using angle-resolvea photoemission spectroscopy(ARPES) combined with the first-principies electronic structure calculations,we report the quantized states at the surface of a single crystal 2 H-TaSe_(2).We have observed sub-bands of quantized states at the three-dimensional Brillouin zone center due to a highly dispersive band with light effective mass along k_(z) direction.The quantized sub-bands shift upward towards E_(F) while the bulk band at Γ shifts downward with the decrease of temperature across charge density wave(CDW) formation.The band shifts could be intimately related to the CDW.While neither the two-dimensional Fermi-surface nesting nor purely strong electron-phonon coupling can explain the mechanism of CDW in 2 H-TaSe_(2),our experiment may ignite the interest in understanding the CDW mechanism in this family.

Photoemission Spectroscopic Evidence of Multiple Dirac Cones in Superconducting BaSn_(3)

Signatures of topological superconductivity(TSC)in superconducting materials with topological nontrivial states prompt intensive researches recently.Utilizing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations,we demonstrate multiple Dirac fermions and surface states in superconductor BaSn_(3) with a critical transition temperature of about 4.4 K.We predict and then unveil the existence of two pairs of type-Ⅰtopological Dirac fermions residing on the rotational axis.Type-ⅡDirac fermions protected by screw axis are confirmed in the same compound.Further calculation for the spin helical texture of the observed surface states originating from the Dirac fermions gives an opportunity for realization of TSC in one single material.Hosting multiple Dirac fermions and topological surface states,the intrinsic superconductor BaSn_(3) is expected to be a new platform for further investigation of topological quantum materials as well as TSC.

Two Gaps in Semiconducting EuSbTe3 Studied by Angle-Resolved Photoemission Spectroscopy

Using angle-resolved photoemission spectroscopy, we study the low-energy electronic structure of a layered ternary telluride EuSbTe3 semiconductor. It is found that the photoemission constant energy contours can be well described by the simple two-parameter（t（perp） and t（para）） tight-binding model based on the Te orbitals in square-net planes of EuSbTe3, suggesting its Te 5p orbitals dominated low-lying electronic structure, which is reminiscent of other rare-earth tritellurides. However, a possible charge-density-wave gap of 80 meV is found to persist in 300 K,which renders the unexpected semiconducting properties in EuSbTe3. Moreover, we reveal an extra band gap occurring around 200 meV below the Fermi level at low temperatures, which can be attributed to the interaction between the main and folded bands due to lattice scatterings. Our findings provide the first comprehensive understanding of the electronic structure of layered ternary tellurides, which lays the basis for future research on these compounds.

钙钛矿SrIrO_(3)外延薄膜中电子-等离激元相互作用诱导能带复制

电子-玻色子相互作用是深入理解多体物理中奇异性质的基础.对于光电子能谱,固体中的光电子发射会涉及多种集体激发,包括声子、磁子、电子-空穴对或等离激元,恰好为研究电子-玻色子耦合提供了一个有效的途径.尽管电子-声子/磁子耦合已有很多相关实验研究,但关于电子-等离激元耦合的信息却鲜有报道.目前,在固体中直观观测电子-等离激元相互作用所导致的能带重正化仍极具挑战性.本文利用分子束外延和角分辨光电子能谱集成系统在外延半金属SrIrO_(3)薄膜中发现了纯的电子-等离激元耦合诱导的等离激元极化子复制能带,其低载流子浓度和较窄能带为研究电子-等离激元相互作用提供了独特的光电子能谱实验平台.该实验结果不仅丰富了固体能带在集体激发情况下的规范化形式,而且进一步表明,在5d电子系统的准粒子动力学过程中电子-等离激元相互作用与电子关联作用和自旋轨道耦合效应等具备同等的重要性.