采用热丝化学气相沉积(HWCVD)技术制备n型纳米晶硅(nc-Si∶H)薄膜,系统地研究了沉积参数,特别是掺杂浓度对薄膜微结构、电学性质和缺陷态的影响,获得了器件质量的n型nc-Si∶H薄膜。制备了nc-Si∶H/c-Si HIT(Heterojunction with Intrins...采用热丝化学气相沉积(HWCVD)技术制备n型纳米晶硅(nc-Si∶H)薄膜,系统地研究了沉积参数,特别是掺杂浓度对薄膜微结构、电学性质和缺陷态的影响,获得了器件质量的n型nc-Si∶H薄膜。制备了nc-Si∶H/c-Si HIT(Heterojunction with Intrinsic Thin-layer)结构太阳电池,研究了异质结结构参数对电池性能的影响,初步得到电池性能参数如下:Voc=483mV、Jsc=29.5mA/cm2、FF=70%、η=10.2%。展开更多
The growth of lead tungstate(PWO)single crystals and their luminescence properties such as light yield,scintillation decay time,and transmittance were reported.The colourless PWO single crystal has been obtained by us...The growth of lead tungstate(PWO)single crystals and their luminescence properties such as light yield,scintillation decay time,and transmittance were reported.The colourless PWO single crystal has been obtained by using the presyntheses powder.Ba,Nb,and Mg ions were doped in the crystals and the Ba-doped crystal has a relatively short decay time.Annealed crystal was found having a better transmission spectrum than that of unannealed one.展开更多
文摘采用热丝化学气相沉积(HWCVD)技术制备n型纳米晶硅(nc-Si∶H)薄膜,系统地研究了沉积参数,特别是掺杂浓度对薄膜微结构、电学性质和缺陷态的影响,获得了器件质量的n型nc-Si∶H薄膜。制备了nc-Si∶H/c-Si HIT(Heterojunction with Intrinsic Thin-layer)结构太阳电池,研究了异质结结构参数对电池性能的影响,初步得到电池性能参数如下:Voc=483mV、Jsc=29.5mA/cm2、FF=70%、η=10.2%。
基金Supported by the National High Technology Research and Development Program of China(No.2006AA05Z408)National Key Basic Research Program of China(No.2006CD202601)
文摘The growth of lead tungstate(PWO)single crystals and their luminescence properties such as light yield,scintillation decay time,and transmittance were reported.The colourless PWO single crystal has been obtained by using the presyntheses powder.Ba,Nb,and Mg ions were doped in the crystals and the Ba-doped crystal has a relatively short decay time.Annealed crystal was found having a better transmission spectrum than that of unannealed one.