Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor(TD-FET) mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents...The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor(TD-FET) mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling(BTBT) current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel(or source-channel junction under gate dielectric). The 2-D nature of TD-FET current flow is also discussed that the on-current is degraded with an increase in the spacer width. BTBT current will not begin to play part in tunneling current until gate voltage is 0.2 V. We clearly identify the influence of the tunneling dielectric layer and spacer electrostatic field on the device characteristics by numerical simulations. The inserted Si_3N_4 tunnel layer between P+ region and N+ region can significantly shorten the direct and band-to-band tunneling path, so a reduced subthreshold slope(Ss) and a high on-current can be achieved. Above all the ambipolar current is effectively suppressed, thus reducing off-current. TD-FET demonstrates excellent performance for low-power applications.展开更多
In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel l...In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 A at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 f A, an improved average subthreshold swing of 14 m V/dec,and a minimum point slope of 4 m V/dec.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
基金Projects(61574109,61204092)supported by the National Natural Science Foundation of China
文摘The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor(TD-FET) mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling(BTBT) current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel(or source-channel junction under gate dielectric). The 2-D nature of TD-FET current flow is also discussed that the on-current is degraded with an increase in the spacer width. BTBT current will not begin to play part in tunneling current until gate voltage is 0.2 V. We clearly identify the influence of the tunneling dielectric layer and spacer electrostatic field on the device characteristics by numerical simulations. The inserted Si_3N_4 tunnel layer between P+ region and N+ region can significantly shorten the direct and band-to-band tunneling path, so a reduced subthreshold slope(Ss) and a high on-current can be achieved. Above all the ambipolar current is effectively suppressed, thus reducing off-current. TD-FET demonstrates excellent performance for low-power applications.
基金Project supported by the National Natural Science Foundation of China(Nos.61204092,61574109)
文摘In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 A at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 f A, an improved average subthreshold swing of 14 m V/dec,and a minimum point slope of 4 m V/dec.
